Micro-size light-emitting diodes (μLEDs) are high-brightness, low-power optoelectronic devices with significant potential in display technology, lighting, and biomedical applications. AlGaInP-based red LEDs experience severe size-dependent effects when scaled to the micron level, and addressing the fabrication challenges of GaN-based red μLED arrays is crucial for achieving homogeneous integration. This study investigates the employment of KOH wet treatments to alleviate efficiency degradation caused by sidewall leakage currents. GaN-based red μLED arrays with pixel sizes ranging from 5 × 5 µm² to 20 × 20 µm² were grown using metal-organic chemical vapor deposition (MOCVD), and then fabricated via rapid thermal annealing, mesa etching, sidewall wet treatment, electrode deposition, sidewall passivation, chemical-mechanical polishing, and via processes. The arrays, with pixel densities ranging from 668 PPI (Pixel Per Inch) to 1336 PPI, consist of 10,000 to 40,000 emitting pixels, and their optoelectronic properties were systematically evaluated. The arrays with varying pixel sizes fabricated in this study were subjected to three distinct processing conditions: without KOH treatment, 3 min of KOH treatment, and 5 min of KOH treatment. Electrical characterization reveals that the 5-min KOH treatment significantly reduces leakage current, enhancing the electrical performance, as compared to the samples without KOH treatment or 3-min treatment. In terms of optical properties, while the arrays without any KOH treatment failed to emit light, the ones with 3- and 5-min KOH treatment exhibit excellent optical uniformity and negligible blue shift. Most arrays treated for 5 min demonstrate superior light output power (LOP) and optoelectronic efficiency, with the 5 µm pixel arrays exhibiting unexpectedly high performance. The results suggest that extending the KOH wet treatment time effectively mitigates sidewall defects, reduces non-radiative recombination, and enhances surface roughness, thereby minimizing optical losses. These findings provide valuable insights for optimizing the fabrication of high-performance GaN-based red μLEDs and contribute to the development of stable, high-quality small-pixel μLEDs for advanced display and lighting applications.

The emergence of GaN-based micro-LEDs has revolutionized display technologies due to their superior brightness, energy efficiency, and thermal stability compared to traditional counterparts. However, the development of red-emitting micro-LEDs on silicon substrates (GaN-on-Si) faces significant challenges, among them including hydrogen-induced deactivation of p-GaN caused by hydrogen species generated from SiH₄ decomposition during SiO₂ passivation layer growth, which degrades device performance. This study systematically investigates the use of high-density metal-oxide dielectric passivation layers deposited by atomic layer deposition (ALD), specifically Al₂O₃ and HfO₂, to mitigate these effects and enhance device reliability. The passivation layers effectively suppress hydrogen diffusion and preserve p-GaN activation, ensuring improved ohmic contact formation and reduced forward voltage, which is measured by the probe station. The properties of the epitaxial layer and the cross-section morphology of the dielectric layer were characterized by photoluminescence (PL) and scanning electron microscopy (SEM), respectively. Experimental results reveal that Al₂O₃ exhibits superior thermal stability and lower current leakage under high-temperature annealing, while HfO₂ achieves higher light-output power (LOP) and efficiency under increased current densities. Electroluminescence (EL) measurements confirm that the passivation strategy maintains the intrinsic optical properties of the epitaxial wafer with minimal impact on Wp and FWHM across varying process conditions. The findings demonstrate the efficacy of metal-oxide dielectric passivation in addressing critical challenges in InGaN red micro-LED on silicon substrate fabrication, contributing to accelerating scalable and efficient next-generation display technologies.