Micro-size light-emitting diodes (μLEDs) are high-brightness, low-power optoelectronic devices with significant potential in display technology, lighting, and biomedical applications. AlGaInP-based red LEDs experience severe size-dependent effects when scaled to the micron level, and addressing the fabrication challenges of GaN-based red μLED arrays is crucial for achieving homogeneous integration. This study investigates the employment of KOH wet treatments to alleviate efficiency degradation caused by sidewall leakage currents. GaN-based red μLED arrays with pixel sizes ranging from 5 × 5 µm² to 20 × 20 µm² were grown using metal-organic chemical vapor deposition (MOCVD), and then fabricated via rapid thermal annealing, mesa etching, sidewall wet treatment, electrode deposition, sidewall passivation, chemical-mechanical polishing, and via processes. The arrays, with pixel densities ranging from 668 PPI (Pixel Per Inch) to 1336 PPI, consist of 10,000 to 40,000 emitting pixels, and their optoelectronic properties were systematically evaluated. The arrays with varying pixel sizes fabricated in this study were subjected to three distinct processing conditions: without KOH treatment, 3 min of KOH treatment, and 5 min of KOH treatment. Electrical characterization reveals that the 5-min KOH treatment significantly reduces leakage current, enhancing the electrical performance, as compared to the samples without KOH treatment or 3-min treatment. In terms of optical properties, while the arrays without any KOH treatment failed to emit light, the ones with 3- and 5-min KOH treatment exhibit excellent optical uniformity and negligible blue shift. Most arrays treated for 5 min demonstrate superior light output power (LOP) and optoelectronic efficiency, with the 5 µm pixel arrays exhibiting unexpectedly high performance. The results suggest that extending the KOH wet treatment time effectively mitigates sidewall defects, reduces non-radiative recombination, and enhances surface roughness, thereby minimizing optical losses. These findings provide valuable insights for optimizing the fabrication of high-performance GaN-based red μLEDs and contribute to the development of stable, high-quality small-pixel μLEDs for advanced display and lighting applications.

The emergence of GaN-based micro-LEDs has revolutionized display technologies due to their superior brightness, energy efficiency, and thermal stability compared to traditional counterparts. However, the development of red-emitting micro-LEDs on silicon substrates (GaN-on-Si) faces significant challenges, among them including hydrogen-induced deactivation of p-GaN caused by hydrogen species generated from SiH₄ decomposition during SiO₂ passivation layer growth, which degrades device performance. This study systematically investigates the use of high-density metal-oxide dielectric passivation layers deposited by atomic layer deposition (ALD), specifically Al₂O₃ and HfO₂, to mitigate these effects and enhance device reliability. The passivation layers effectively suppress hydrogen diffusion and preserve p-GaN activation, ensuring improved ohmic contact formation and reduced forward voltage, which is measured by the probe station. The properties of the epitaxial layer and the cross-section morphology of the dielectric layer were characterized by photoluminescence (PL) and scanning electron microscopy (SEM), respectively. Experimental results reveal that Al₂O₃ exhibits superior thermal stability and lower current leakage under high-temperature annealing, while HfO₂ achieves higher light-output power (LOP) and efficiency under increased current densities. Electroluminescence (EL) measurements confirm that the passivation strategy maintains the intrinsic optical properties of the epitaxial wafer with minimal impact on Wp and FWHM across varying process conditions. The findings demonstrate the efficacy of metal-oxide dielectric passivation in addressing critical challenges in InGaN red micro-LED on silicon substrate fabrication, contributing to accelerating scalable and efficient next-generation display technologies.

The threshold voltage (Vth) of p-GaN gate enhancement-mode (E-mode) high electron mobility transistors (HEMTs) on silicon substrates grown by metal–organic chemical vapor deposition (MOCVD) is often limited to 1.0–1.5 V. Apart from the low Mg acceptor activation rate, the non-uniform vertical Mg distribution in thin p-GaN layers is also a key bottleneck limiting Vth. This work reveals that the vertical distribution (not only magnitude) of Mg doping fundamentally influences Vth by modulating the charge centroid and electric field coupling to the heterointerface. Through bis(cyclopentadienyl)magnesium (Cp₂Mg) flow modulation, surfactant-assisted growth, and growth rate adjustment, the vertical Mg doping uniformity within the 80 nm p-GaN layer was improved while effectively suppressing Mg out-diffusion. A short-cycle gate-first self-aligned process was used to fabricate the devices, and the results showed that the improved Mg vertical distribution led to a significant Vth enhancement by 0.75 V. Technology Computer-Aided Design (TCAD) simulations further demonstrated that the uniform doping profile builds a stronger negative space charge field beneath the gate, raising the energy band and increasing Vth. This work not only presents practical strategies, but also establishes a direct physical link between vertical Mg doping distribution and Vth in Si-based E-mode HEMTs.

In this work, we demonstrate high-efficiency 385 nm AlGaN-based near-ultraviolet micro light emitting diode (NUV-Micro LED) arrays. The epi structure is prepared using a novel AlN-inserted superlattice electrical blocking layer which enhances hole spreading in the p-type region significantly. The NUV-Micro LED arrays in this work comprise 228 chips in parallel with wavelengths at 385 nm, and each single chip size is 15 × 30 μm². Compared with conventional bulk AlGaN-based EBL structures, the NUV-Micro LED arrays that implemented the new hole spreading enhanced superlattice electrical blocking layer (HSESL-EBL) structure proposed in this work had a remarkable increase in light output power (LOP) at current density, increasing the range down from 0.02 A/cm² to as high as 97 A/cm². The array’s light output power is increased up to 1540% at the lowest current density 0.02 A/cm², and up to 58% at the highest current density 97 A/cm², measured under room temperature (RT); consequently, the WPE is increased from 13.4% to a maximum of 30.18%. This AlN-inserted HESEL-EBL design significantly enhances both the lateral expansion efficiency and the hole injection efficiency into the multi quantum well (MQW) in the arrays, improving the concentration distribution of the holes in MQW while maintaining good suppression of electron leakage. The array’s efficiency droop has also been greatly reduced.

This study systematically investigates the intrinsic vertical breakdown characteristics of 8-inch GaN-on-Si high-electron-mobility transistor (HEMT) buffer layers (extending up to the GaN channel layer) using a vertical electrode configuration. By comparing samples with different carbon doping doses, AlN insertion layers, and superlattice cycle numbers (buffer layer thickness), combined with Technology Computer-Aided Design (TCAD) simulations, the relevant mechanisms are revealed. The results show that buffer layer thickness is a critical factor determining the vertical breakdown voltage. Its increase effectively reduces the longitudinal average electric field, widens the depletion region, and increases the breakdown voltage by approximately 50%. Carbon doping compensates for carriers and suppresses leakage through deep-level acceptor traps. Inserting thin AlN layers into the superlattice has a limited effect on improving breakdown voltage. This research provides clear experimental guidance for the optimal design of high-voltage GaN HEMT buffer layers from both material and physical perspectives.

GaN-on-Si light-emitting devices have been widely studied in the field of opto-electronics, while their optical performance and characterization accessibility are severely limited by the strong visible light absorption of the native silicon substrate. Conventional substrate transfer technologies often suffer from inherent thermal, optical, or mechanical bottlenecks. In this study, we developed a robust wafer-level substrate transfer strategy for 8-inch green GaN-on-Si light-emitting device wafers, utilizing a hybrid planarization process combined with SiO₂–SiO₂ direct bonding. The hybrid planarization precisely eliminated the 900 nm macroscopic steps, achieving sub-nanometer surface roughness for high-yield wafer bonding. We systematically investigated the physical evolution during substrate removal. Results indicate that the removal of the thick native silicon and high-stress buffer layers effectively released the additional in-plane biaxial compressive stress within the multiple quantum wells (MQWs), thereby mitigating the quantum-confined Stark effect (QCSE). Benefiting from the elimination of the light-absorbing silicon substrate and the incorporation of a built-in back-surface reflector (BSR), the transferred devices achieved a remarkable 1.9-fold enhancement in relative optical performance, albeit with an inherent trade-off of increased reverse leakage current while preserving basic diode functionality. Furthermore, optothermal dynamic analysis at high injection levels suggests a potential localized thermal bottleneck at the thick SiO₂ bonding interface, where a hypothesized heat-induced spectral red shift may counteract the carrier-screening blue shift. This work provides a feasible wafer-level substrate transfer process for GaN-on-Si devices and offers systematic experimental insights into stress relaxation and optothermal behaviors during the substrate transfer process.