Showing functionalized adsorbent hydrogels for water purification, covering synthesis routes, material characterization, and advanced functions including solar desalination, pollutant adsorption, antimicrobial, and environmental responsiveness.

Ion induced porosity in Ge has been investigated with and without a cap layer for two ion species, Ge and Sn, with respect to ion fluence and temperature. Results without a cap are consistent with a previous work in terms of an observed ion fluence and temperature dependence of porosity, but with a clear ion species effect where heavier Sn ions induce porosity at lower temperature (and fluence) than Ge. The effect of a cap layer is to suppress porosity for both Sn and Ge at lower temperatures but in different temperatures and fluence regimes. At room temperature, a cap does not suppress porosity and results in a more organised pore structure under conditions where sputtering of the underlying Ge does not occur. Finally, we observed an interesting effect in which a barrier layer of a-Ge that is denuded of pores formed directly below the cap layer. The thickness of this layer (∼ 8 nm) is largely independent of ion species, fluence, temperature, and cap material, and we suggest that this is due to viscous flow of a-Ge under ion irradiation and wetting of the cap layer to minimize the interfacial free energy.

Crystalline Ge and Si_1−xGe_x alloys (x = 0.83, 0.77) of (100) orientation were implanted with 140 keV Ge⁻ ions at fluences between $5\times {10}^{15}$ to $3\times {10}^{17}$ ions/cm², and at temperatures between 23 °C and 200 °C. The energy deposition of the ions leads to the formation of porous structures consisting of columnar pores separated by narrow sidewalls. Their sizes were characterized with transmission electron microscopy, scanning electron microscopy, and small angle x-ray scattering. We show that the pore radius does not depend significantly on the ion fluence above $\hspace{0.17em}5\times {10}^{15}$ ions/cm², i.e., when the pores have already developed, yet the pore depth increases from 31 to 516 nm with increasing fluence. The sidewall thickness increases slightly with increasing Si content, while both the pore radius and the sidewall thickness increase at elevated implantation temperatures.

We report an advanced passivation strategy for perovskite solar cells (PSCs) by introducing core–shell structured perovskite quantum dots (PQDs), composed of methylammonium lead bromide (MAPbBr₃) cores and tetraoctylammonium lead bromide (tetra-OAPbBr₃) shells, during the antisolvent-assisted crystallization step. The epitaxial compatibility between the PQDs and the host perovskite matrix enables effective passivation of grain boundaries and surface defects, thereby suppressing non-radiative recombination and facilitating more efficient charge transport. At an optimal PQD concentration of 15 mg/mL, the modified PSCs demonstrated a remarkable increase in power conversion efficiency (PCE) from 19.2% to 22.85%. This enhancement is accompanied by improved device metrics, including a rise in open-circuit voltage (Voc) from 1.120 V to 1.137 V, short-circuit current density (Jsc) from 24.5 mA/cm² to 26.1 mA/cm², and fill factor (FF) from 70.1% to 77%. Spectral response analysis via incident photon-to-current efficiency (IPCE) revealed enhanced photoresponse in the 400–750 nm wavelength range. Additionally, long-term stability assessments showed that PQD-passivated devices retained more than 92% of their initial PCE after 900 h under ambient conditions, outperforming control devices which retained ~80%. These findings underscore the potential of in situ integrated PQDs as a scalable and effective passivation strategy for next-generation high-efficiency and stable perovskite photovoltaics.

Flexible perovskite solar cells (FPSCs) hold great promise for lightweight and wearable photovoltaics, but improving their efficiency and durability under mechanical stress remains a key challenge. In this work, we fabricate and characterize flexible planar FPSCs on a polyethylene terephthalate (PET). A phenethylammonium iodide (PEAI) surface passivation layer is introduced on the perovskite to form a two-dimensional capping layer, and its impact on device performance and stability is systematically studied. The champion PEAI-passivated flexible device achieves a power conversion efficiency (PCE) of ~16–17%, compared to ~14% for the control device without PEAI. The improvement is primarily due to an increased open-circuit voltage and fill factor, reflecting effective surface defect passivation and improved charge carrier dynamics. Importantly, mechanical bending tests demonstrate robust flexibility: the PEAI-passivated cells retain ~85–90% of their initial efficiency after 700 bending cycles (radius ~5 mm), significantly higher than the ~70% retention of unpassivated cells. This work showcases that integrating a PEAI surface treatment with optimized electron (SnO₂) and hole (spiro-OMeTAD) transport layers (ETL and HTL) can simultaneously enhance the efficiency and mechanical durability of FPSCs. These findings pave the way for more reliable and high-performance flexible solar cells for wearable and portable energy applications.