The paper presents the results of an investigation of the influence of technological parameters on the microstructure, optical, electrical and nanomechanical properties of zinc oxide coatings prepared using the pulsed reactive magnetron sputtering method. Three sets of ZnOx thin films were deposited in metallic, shallow dielectric and deep dielectric sputtering modes. Structural investigations showed that thin films deposited in the metallic mode were nanocrystalline with mixed hexagonal phases of metallic zinc and zinc oxide with crystallite size of 9.1 and 6.0 nm, respectively. On the contrary, the coatings deposited in both dielectric modes had a nanocrystalline ZnO structure with an average crystallite size smaller than 10 nm. Moreover, coatings deposited in the dielectric modes had an average transmission of 84% in the visible wavelength range, while thin films deposited in the metallic mode were opaque. Measurements of electrical properties revealed that the resistivity of as-deposited thin films was in the range of 10⁻⁴ Ωcm to 10⁸ Ωcm. Coatings deposited in the metallic mode had the lowest hardness of 2.2 GPa and the worst scratch resistance among all sputtered coatings, whereas the best mechanical properties were obtained for the film sputtered in the deep dielectric mode. The obtained hardness of 11.5 GPa is one of the highest reported to date in the literature for undoped ZnO.

In this work, selected properties of metallic and oxide thin films based on titanium and cobalt were described. Thin-film coatings were prepared using the magnetron sputtering method. The deposition was carried out from sintered targets with different Co-content (2 at.%, 12 at.% and 50 at.%). The relation between the Ti–Co target composition and the Co-content in the metallic and oxide films was examined. There was 15–20% more cobalt in the films than in the target. Moreover, the deposition rate under neutral conditions (in Ar plasma) was even 10-times higher compared to oxidizing Ar:O₂ (70:30) plasma. A comprehensive analysis of the structural properties (performed with GIXRD and SEM) revealed the amorphous nature of (Ti,Co)Ox coatings, regardless of the cobalt content in the coating. The fine-grained, homogenous microstructure was observed, where cracks and voids were identified only for films with high Co-content. Optical studies have shown that these films were well transparent (60% ÷ 80%), and the amount of cobalt in the target from which they were sputtered had a significant impact on the decrease in the transparency level, the slight shift of the absorption edge position (from 279 nm to 289 nm) as well as the decrease in their optical band gap energy (from 3.13 eV to 1.71 eV). Electrical studies have shown that in (Ti,Co)Ox thin films, a unipolar memristive-like effect can be observed. The occurrence of such effects has not been reported so far in the case of TiO₂ coatings with the addition of Co.

Al_xZn_yO thin films were obtained by reactive pulsed magnetron sputtering. A two-element Zn/Al planar target was used as source material prepared in the form of a Zn disc (100 mm diameter) with Al rings pressed into its surface. The sputtering processes were carried out in a mixture of argon and oxygen. The films were deposited with a discharge power of P_E = 400 W, which corresponded to a power density on the target surface of approximately 5 W/cm². The films were deposited on glass strip substrates, placed symmetrically over the target, making it possible to obtain films with different composition and thickness. The film sheet resistance was measured as a function of the distance from the target axis on both sides (front and back) of the substrate. The lowest measured resistivity was about 4 × 10⁻³ Ω·cm. Additionally, optical properties, surface topography, and elemental composition were determined in selected areas of the substrate.

This paper presents a detailed analysis of aluminium-doped zinc oxide (AZO) thin films and considers them a promising alternative to indium tin oxide in transparent electrodes. The study focusses on critical properties of AZO, including optical, electrical, and mechanical properties, with potential applications in displays, photovoltaic cells, and protective coatings. The deposited AZO thin films are characterised by excellent optical and electrical parameters, with transparency in the visible light range exceeding 80% and resistivity of 10⁻³ Ω·cm, which gives a high value of figure of merit of 63. Structural analysis confirms the nanocrystalline nature of as-deposited AZO thin films, featuring hexagonal ZnO, orthorhombic Al₂O₃, and cubic Al₂ZnO₄ phases. The study includes nanoindentation measurements, which reveal exceptional hardness (11.4 GPa) and reduced elastic modulus (98 GPa), exceeding typical values reported in the literature, highlighting their protective potential. Abrasion tests have shown extraordinary scratch resistance due to the lack of impact on topography and surface roughness up to 10,000 cycles. This comprehensive study demonstrated that as-deposited AZO thin films are multifunctional materials with exceptional optical, electrical, and mechanical properties. The findings open up possibilities for a variety of applications, especially in protective coatings, where the combination of hardness, scratch resistance, and transparency is both rare and valuable.

This article analyzes the reactive magnetron sputtering process, using a two-element Zn-Al target, for depositing aluminum-doped zinc oxide (AZO) layers, aimed at transparent electronics. AZO films were deposited on Corning 7059 glass, flexible Corning Willow^® glass and amorphous silica substrates. To optimize the process, the study examined the target surface state across varying argon/oxygen ratios. The gas mixture significantly influenced the Al/Zn atomic ratio in the films, affecting their structural, optical and electrical performance. Films deposited at 80/20 argon/oxygen ratio—near the dielectric mode—showed high light transmission (84%) but high resistivity (47.4·10⁻³ Ω·cm). Films deposited at ratio of 84/16—close to metallic mode—exhibited lower resistivity (1.9·10⁻³ Ω·cm) but reduced light transmission (65%). The best balance was achieved with an 82/18 ratio, yielding high light transmission (83%) and low resistivity (1.4·10⁻³ Ω·cm). These findings highlight the critical role of sputtering atmosphere in tailoring AZO layer properties for use in transparent electronics.

Magnetron sputtered nickel and nickel oxide films have been studied for various applications. We may find, among others, these films in electrochromic display devices, in resistive type gas sensors, as metal electrodes in electronic devices, in solar thermal absorbers. Pure nickel films deposited using PVD technique possess good corrosion and wear resistant properties. Magnetron sputtering has several advantages in film deposition (in comparison to other methods) such as relatively low heating temperature of the deposited substrate during sputtering process, high energy of sputtered atoms (about 10 eV) at the substrate, which influences positively the films adhesion. From application point of view, the most valuable feature of these films is the possibility of scaling target dimensions, which makes feasible the deposition on a several square meter surfaces. The improvement of magnetron sputtering devices design may influence positively the optimization of the deposition technology and its efficiency. The thin nickel and nickel oxide films were prepared by pulsed magnetron sputtering using original type WMK magnetron device. Ni (99.9 %) has been used as a sputtering target of 100 mm in diameter and different thicknesses (3 mm, 5 mm, and 6 mm). The distance between the substrate and target was the same in all experiments and equal to 120 mm. Argon and oxygen gases were introduced during the reactive process through needle gas valves at a total pressure of 0.4 Pa. The sputtering power, sputtering pressure and oxygen partial pressure have been used as technological knobs for deposition processes. The helpful tool for controlling the pulsed magnetron sputtering process was the original parameter of supply (so called circulating power). Results from our experiments showed that the deposition of Ni films is possible even from targets of 6 mm thickness. Deposition rate increased proportionally with the sputtering power. The aim of this work is to use the acquired expertise to develop an efficient technology of thin nickel oxide layers for electrochromic systems.