Understanding the role of defects in hybrid organic inorganic perovskites (HOIPs) is critically important to engineer the stability and performance of photovoltaic devices based on HOIPs. Recent reports on multi-cation compositions of general formula (A¹,A²,A³,A⁴)Pb(X¹,X²,X³)₃, where the A sites can be occupied by a distribution of 2–4 metallic/organic cations and X sites with halide anions have shown stabilization effects against the well-known methyl ammonium lead triiodide (CH₃NH₃PbI₃), although the underlying mechanism is not fully elucidated. Herein, polycrystalline layers of 4APb(IBr)₃ perovskite, where A is occupied by a combination of Cs⁺ (cesium ion), GA⁺ (guanidinium), MA⁺ (methylammonium), and FA⁺ (formamidinium) ions were synthesized. To gain insight on the role of intrinsic defects, electron irradiation was used for introducing point defects in a controlled way in the quadruple-cation HOIPs. Our results show that the engineered defects in perovskites strongly influenced the absorption, photoluminescence, and time-resolved photoluminescence of these materials, probably due to introduction of additional energy levels that modify electronic and light emitting properties of the material. Furthermore, the irradiation-induced defects were found to strongly affect the aging behavior of HOIPs and modify their radiative recombination properties.

This work investigates the impact of an internal electric field on the annihilation characteristics of positrons implanted in a $180\left(10\right)\mathrm{nm}$ SiO₂ layer of a Metal-Oxide-Silicon (MOS) capacitor, using Positron Annihilation Lifetime Spectroscopy (PALS). By varying the gate voltage, electric fields up to $1.72\mathrm{MV}/\mathrm{cm}$ were applied. The measurements reveal a field-dependent suppression of positronium (Ps) formation by up to $64\%$, leading to an enhancement of free positron annihilation. The increase in free positrons suggests that vacancy clusters are the dominant defect type in the oxide layer. Additionally, drift towards the SiO₂/Si interface reveals not only larger void-like defects but also a distinct population of smaller traps that are less prominent when drifting to the Al/SiO₂ interface. In total, by combining positron drift with PALS, more detailed insights into the nature and spatial distribution of defects within the SiO₂ network and in particular near the SiO₂/Si interface are obtained.

This study demonstrates drift-assisted positron annihilation lifetime spectroscopy on a p-type (100) silicon substrate in a MOS capacitor, using an applied electric field to control the spatial positron distribution prior to annihilation. The device was operated under accumulation, depletion, and inversion conditions, revealing that the internal electric field can drift-transport positrons either toward or away from the SiO₂/Si interface, acting as a diffusion barrier or support, respectively. Key positron drift-transport parameters were derived from lifetime data, and the influence of the non-linear electric field on positron trapping was analyzed. The comparison of the presented results to our previous oxide-side drift experiment on the same metal-oxide–silicon capacitor indicates that the interface exhibits two distinct sides, with different types of defects: void-like and vacancy-like ($P_{\mathrm{b}}$ centers). The positron data also suggest that the charge state of the $P_{\mathrm{b}}$ centers likely varies with the operation mode of the MOS, which affects their positron trapping behavior.