The energy gap law (E_G-law) and aggregation quenching are the main limitations to overcome in the design of near-infrared (NIR) organic emitters. Here, we achieve unprecedented results by synergistically addressing both of these limitations. First, we propose porphyrin oligomers with increasing length to attenuate the effects of the E_G -law by suppressing the non-radiative rate growth, and to increase the radiative rate via enhancement of the oscillator strength. Second, we design side chains to suppress aggregation quenching. We find that the logarithmic rate of variation in the non-radiative rate vs. E_G is suppressed by an order of magnitude with respect to previous studies, and we complement this breakthrough by demonstrating organic light-emitting diodes with an average external quantum efficiency of ~1.1%, which is very promising for a heavy-metal-free 850 nm emitter. We also present a novel quantitative model of the internal quantum efficiency for active layers supporting triplet-to-singlet conversion. These results provide a general strategy for designing high-luminance NIR emitters.

Defects are inherent in transition metal dichalcogenides and significantly affect their chemical and physical properties. In this study, surface defect electrochemical nanopatterning is proposed as a promising method to tune in a controlled manner the electronic and functional properties of defective MoS₂ thin films. Using parallel electrochemical nanolithography, MoS₂ thin films are patterned, creating sulphur vacancy‐rich active zones alternated with defect‐free regions over a centimetre scale area, with sub‐micrometre spatial resolution. The patterned films display tailored optical and electronic properties due to the formation of sulphur vacancy‐rich areas. Moreover, the effectiveness of defect nanopatterning in tuning functional properties is demonstrated by studying the electrocatalytic activity for the hydrogen evolution reaction.

Luminescent radicals are attracting attention as emitters in electroluminescent devices thanks to the exploitation of doublet excitons. Recent studies reveal that exciton formation in radical organic light‐emitting diodes (OLEDs) primarily occurs through a charge trapping mechanism. Although typically detrimental for OLEDs, this might be a key process to elucidate light emission in organic light‐emitting transistors (OLETs). Here, a unipolar n‐type architecture suitable for the implementation of radical emitters is introduced, designed based on computational calculations. The operation of the as‐realized devices incorporating the newly synthesized [2,6‐dichloro‐4‐(2,6‐dimethoxyphenyl)phenyl](3,5‐dichloro‐4‐pyridyl) (2,4,6‐trichlorophenyl)methyl radical is investigated via transient electroluminescence measurements to demonstrate the occurrence of long‐living emission ascribed to the charge trapping mechanisms. Moreover, a comprehensive understanding of the processes governing radical‐OLET is obtained by recording complete 2D maps of both optical and electrical response of the device as a function of applied voltages. Notably, the trapping of electrons by radical moieties is demonstrated to generate a negative charge density in the emissive layer that facilitates holes to be injected: increasing the balance of opposite charge carriers, a tenfold enhancement of the external quantum efficiency (EQE) at the proper source‐drain and source‐gate voltage conditions is reported to reach a maximum EQE value of 0.2%.

This study introduces a straightforward technique for edge engineering in MoS₂ flakes through chemically induced nano‐folding. By utilizing a buffered oxide etchant solution, precise detachment is achieved from the substrate and controlled folding/rolling of MoS₂ flakes, resulting in the creation of additional active edges up to 100 times thicker than the original flake. The model material, MoS₂ grown on silicon substrates via chemical vapor deposition, undergoes a dramatic transformation in morphology. This transformation is driven by partial detachment from the substrate, followed by bending and folding of the flake boundaries, which generates well‐defined additional edges. The impact of edge thickening is demonstrated on fundamental characteristics such as work function, crystallinity, and catalytic properties. Notably, the findings demonstrate that the engineered edges significantly enhance the electrocatalytic activity of MoS₂ in hydrogen evolution reactions. This highlights the potential of this method to substantially improve the performance of low‐dimensional materials.