Gallium oxide (Ga₂O₃)-based memristors are gaining traction as promising candidates for next-generation electronic devices toward in-memory computing, leveraging the unique properties of Ga₂O₃, such as its wide bandgap, high thermodynamic stability, and chemical stability. This review explores the evolution of memristor theory for Ga₂O₃-based materials, emphasising capacitive memristors and their ability to integrate resistive and capacitive switching mechanisms for multifunctional performance. We discussed the state-of-the-art fabrication methods, material engineering strategies, and the current challenges of Ga₂O₃-based memristors. The review also highlights the applications of these memristors in memory technologies, neuromorphic computing, and sensors, showcasing their potential to revolutionise emerging electronics. Special focus has been placed on the use of Ga₂O₃ in capacitive memristors, where their properties enable improved switching speed, endurance, and stability. In this paper we provide a comprehensive overview of the advancements in Ga₂O₃-based memristors and outline pathways for future research in this rapidly evolving field.

This work presents a systematic study in the photocurrent transport and transient dynamics in amorphous Ga2O3-based deep ultraviolet (DUV) photodetectors, which are configured with a co-planar metal–semiconductor–metal structure, with high performances including a DUV/dark current contrast ratio of 106 and a photoresponsivity of 25.3 A/W. Under steady-state DUV excitation, an analytical current–voltage relationship is developed to describe the carrier transport behaviors. Under the pulsed-DUV excitation and post-DUV exposure, the current rise and decay dynamics have been investigated, which enables us to clarify the role of intrinsic defects in the photoresponse and response speed. In addition, we also propose a criterion to adequately evaluate the photoresponsivity of Ga2O3-based DUV photodetectors with slow photocurrent decays.

Memristors are regarded as a key electronic component for non-von Neumann computing, such as neuromorphic networks. Hereby, we report a capacitance-coupled memristor (C-memristor) configured with ITO/Ga2O3/ITO coplanar interdigital structures. Depending on the voltage sweeping directions, the C-memristor exhibits a clear current switching with different polarities, offering an easy-to-readout electronic status. Due to the coupled capacitance, the difference between the currents in forward and reverse scanning strongly depends on the voltage sweeping speed, which was quantitatively studied with an equivalent circuit that we established. A device model based on filamentary conductive paths formed by the electrically driven oxygen vacancies was utilized to explain the working mechanism of the C-memristor, which aligns well with the observed results. Unlike previously reported Ga2O3 memristors that rely only on the status of the resistance, our device also exhibits capacitance variation, offering an additional degree of freedom (e.g., the power nodes) for constructing a neural network.

Amorphous gallium oxide (a‐Ga ₂ O ₃ ) has emerged as a promising material for ultraviolet (UV) optoelectronic applications, particularly solar‐blind photodetection, due to its wide bandgap, high transparency, and compatibility with low‐temperature, large‐area deposition. This review summarises key aspects of a‐Ga ₂ O ₃ , including material properties, deposition techniques, device architectures, and performance limitations. Special emphasis is placed on the role of structural disorder, localised states, Urbach tails, and trap‐assisted transport in governing electronic and optical behaviour. Photodetector performance metrics such as responsivity, detectivity, and temporal response are critically examined, with attention to inconsistencies in reported data. A comparison of device structures (e.g., MSM, Schottky, and heterojunction) reveals a trade‐off between high responsivity and response speed, largely driven by defect‐mediated carrier trapping and persistent photoconductivity. Current challenges, including high defect densities, low carrier mobility, and slow response, are discussed alongside emerging strategies for improvement. The potential of a‐Ga ₂ O ₃ for flexible and unconventional substrates is also highlighted. Overall, this work outlines key directions for advancing a‐Ga ₂ O ₃ towards reliable and practical UV sensing applications.

X-ray detection underpins a wide range of applications in medicine, security, industrial inspection, scientific research for non-destructive imaging, and material analysis. The rapid development of Ga2O3-based x-ray detectors offers a promising pathway toward next-generation detectors with high sensitivity, low noise, and harsh environment applications, benefiting from its intrinsic material properties, such as high density, wide bandgap energy, and high thermal–chemical stability. However, the underlying device operating mechanisms, including both carrier excitation and transport processes, have not yet been adequately studied, largely due to the misuse of x-ray sources in previous studies. In addition, benchmarking of device characteristics has been problematic due to experimental or data analysis issues, as well as misunderstandings of the applied equations associated with parameter definitions. In this work, we have designed and performed instructive research based on epitaxial β–Ga2O3:Si and its planar Schottky detectors, measured with energy-tunable monochromatic x-ray beams on a synchrotron beamline, clarifying the device excitation and carrier transport mechanisms with properly benchmarked device performance. In the end, we propose a set of protocols for correctly measuring and analyzing the device performance. The proposed protocols are broadly applicable and can be readily extended to other semiconductor x-ray detectors.