The defects and subsurface damages induced by crystal growth and micro/nano-machining have a significant impact on the functional performance of machined products. Raman spectroscopy is an efficient, powerful, and non-destructive testing method to characterize these defects and subsurface damages. This paper aims to review the fundamentals and applications of Raman spectroscopy on the characterization of defects and subsurface damages in micro/nano-machining. Firstly, the principle and several critical parameters (such as penetration depth, laser spot size, and so on) involved in the Raman characterization are introduced. Then, the mechanism of Raman spectroscopy for detection of defects and subsurface damages is discussed. The Raman spectroscopy characterization of semiconductor materials’ stacking faults, phase transformation, and residual stress in micro/nano-machining is discussed in detail. Identification and characterization of phase transformation and stacking faults for Si and SiC is feasible using the information of new Raman bands. Based on the Raman band position shift and Raman intensity ratio, Raman spectroscopy can be used to quantitatively calculate the residual stress and the thickness of the subsurface damage layer of semiconductor materials. The Tip-Enhanced Raman Spectroscopy (TERS) technique is helpful to dramatically enhance the Raman scattering signal at weak damages and it is considered as a promising research field.

For silicon carbide (SiC) processed by ion-implantation, dedicated test structure fabrication or destructive sample processing on test wafers are usually required to obtain depth profiles of electrical characteristics such as carrier concentration. In this study, a rapid and non-destructive approach for depth profiling is presented that uses confocal Raman microscopy. As an example, a 4H–SiC substrate with an epitaxial layer of several micrometers thick and top layer in nanoscale that was modified by ion-implantation was characterized. From the Raman depth profiling, longitudinal optical (LO) mode from the epitaxial layer and longitudinal optical phonon-plasmon coupled (LOPC) mode from the substrate layer can be sensitively distinguished at the interface. The position profile of the LOPC peak intensity in the depth direction was found to be effective in estimating the thickness of the epitaxial layer. For three kinds of epitaxial layer with thicknesses of 5.3 μm, 6 μm, and 7.5 μm, the average deviations of the Raman depth analysis were −1.7 μm, −1.2 μm, and −1.4 μm, respectively. Moreover, when moving the focal plane from the heavily doped sample (~10¹⁸ cm⁻³) to the epitaxial layer (~10¹⁶ cm⁻³), the LOPC peak showed a blue shift. The twice travel of the photon (excitation and collection) through the ion-implanted layer with doping concentrations higher than 1 × 10¹⁸ cm⁻³ led to a difference in the LOPC peak position for samples with the same epitaxial layer and substrate layer. Furthermore, the influences of the setup in terms of pinhole size and numerical aperture of objective lens on the depth profiling results were studied. Different from other research on Raman depth profiling, the 50× long working distance objective lens (50L× lens) was found more suitable than the 100× lens for the depth analysis 4H–SiC with a multi-layer structure.

Surface-enhanced Raman scattering (SERS) and tip-enhanced Raman scattering (TERS) are fast, convenient, and non-destructive molecular detection techniques, which provide a practical method for studying interfacial reactions with high resolution and accuracy. Both techniques are able to provide quantitative and qualitative information on the chemical properties, conformational changes, order state, and molecular orientation of various surfaces. This paper aims at summarizing the research efforts in the field of SERS and TERS related to tribological systems with a special emphasis on thin film and nanoparticles. This overview starts with a brief introduction for both techniques. Afterwards, it summarizes pros and cons of both techniques related to the advanced characterization of tribologically induced reactions layers. Moreover, the feasibility of both techniques to evaluate the friction and wear performance of new lubricant additives including solid lubricants is discussed. At the end of this review article, the main challenges and future directions in this field are prospected to emphasize the development direction of SERS and TERS in tribology and lubricants.

An atmospheric glow microplasma is generated in the hollow core of microns-thick optical fibers (>1 m long) when the sinusoidal voltage with a peak voltage of 5 kV and a frequency of 5.0 kHz is applied to these microelectrodes along the outside of optical fibers. Measurements show that the atmospheric glow microdischarge consists of current pulses with amplitudes of tens of amperes and pulse widths of several microseconds. Atmospheric surface barrier discharges are formed along the inner surface of hollow optical fibers between adjacent microelectrodes, which results in the pulsed glow microdischarges. By flowing octafluorocyclobutane (c-C₄F₈)/helium (He) mixtures through the hollow-core optical fiber, fluorocarbon polymer (FCP) coatings are deposited on the inner surface of the > 1 m long optical fiber. Analysis indicates that the glow microdischarge contributes to the uniform deposition of FCP coatings on the inner surface of hollow fibers. The in situ optical emission measurements show that various carbon-containing species, such as CF₂, CN, and C₂ are generated in the visually uniform microplasmas. The discharge mechanism is discussed based on the I-V and optical emission measurements and FCP coating characterizations.

In this work, 4H SiC samples with a multilayer structure (shallow implanted layer in a lowly doped n-type epitaxial layer grown on a highly doped thick substrate) were investigated by Raman scattering. First, Raman depth profiling was performed to identify characteristic peaks for the different layers. Then, Raman scattering was used to characterize the carrier concentration of the samples. In contrast to the conventional Raman scattering measuring method of the Longitudinal Optical Plasmon Coupled (LOPC) mode, which is only suitable to characterize carrier concentrations in the range from 2 × 10¹⁶ to 5 × 10¹⁸ cm⁻³, in this work, Raman scattering, which is based on exciting photons with an energy above the band gap of 4H-SiC, was used. The proposed method was evaluated and approved for different Al-implanted samples. It was found that with increasing laser power the Al-implanted layers lead to a consistent redshift of the LOPC Raman peak compared to the peak of the non-implanted layer, which might be explained by a consistent change in effective photo-generated carrier concentration. Besides, it could be demonstrated that the lower concentration limit of the conventional approach can be extended to a value of 5 × 10¹⁵ cm⁻³ with the approach presented here.