We have studied the effect of substrate-induced strain on the properties of thin films of the hole-doped manganite ${\left({\mathrm{La}}_{1-y}{\mathrm{Pr}}_y\right)}_{0.67}{\mathrm{Ca}}_{0.33}\mathrm{Mn}{\mathrm{O}}_3$ ($y=0.4$, 0.5, and 0.6) grown on $\mathrm{Nd}\mathrm{Ga}{\mathrm{O}}_3$ (NGO) substrates, in order to distinguish between the roles played by long-range strain interactions and quenched atomic disorder in forming the micrometer-scale phase separated state. We show that a fluid phase separated (FPS) state is formed at intermediate temperatures similar to the strain-liquid state in bulk compounds, which can be converted to a metallic state by applying an external electric field. In contrast to bulk compounds, at low temperatures a strain stabilized ferromagnetic metallic (FMM) state is formed in the $y=0.4$ and 0.5 samples. However, in the $y=0.6$ sample a static phase separated (SPS) state is formed similar to the strain-glass phase in bulk compounds. Our results suggest that the substrate-induced strain is a function of temperature. Hence, we show that the temperature induced variation of the long-range strain interactions plays a dominant role in determining the properties of thin films of phase-separated manganites.

Noninvasive sensors capable of measuring weak biopotential signals, such as electrocardiogram (ECG) and EEG, and communicating results wirelessly to a host computer are developing rapidly. Some of them utilize capacitively coupled electrodes in an attempt to place the sensor at a distance from the skin. This article demonstrated the fabrication and development of a capacitively coupled ECG electrode prototype using custom high specific capacitance electrodes and custom high-performance electronics. Two ultrathin capacitive electrodes were fabricated on a flexible polyimide substrate (2 × 2 in) protected by a guard ring to reduce noise. The detection and amplification circuitry consisted of operational amplifiers (OpAmps) that filtered and conditioned the ECG signal. R-peaks in the ECG were readily detected and quantified using both simulated signals from ECG databases and real signals from human subjects. Heart rates and heart rate variability calculated from our monitor measurements were comparable with commercial rigid wearable sensors, including a smartwatch and an ECG monitor that uses standard clinical ionic electrodes. The prototype monitor was tested on human subjects during rest and moderate exercise and showed appropriate responses. The challenge of high-gain low-noise amplification was met by the development of highly thinned OpAmps whose operation was shown to be equivalent to commercially available rigidly packaged OpAmps, demonstrating that high-performance Si-electronics can be used to produce high-fidelity signals from weak biopotentials.

In this paper, we demonstrate through experiments and analysis that the most probable mechanism for the observed ferromagnetism in 2% Mn-doped ZnO thin films is a combination of intrinsic and carrier-mediated interaction of the magnetic moments. While no impurity-phase contributions were detected, a strong correlation between effective carrier densities and ferromagnetism was established. Magnetism in amorphous films with high defect densities were described by a bound magnetic polaron model whereas that in highly conducting films was consistent with a Ruderman-Kittel-Kasuya-Yosida exchange mechanism.

The authors report electrical and optical characterization of zinc oxide (ZnO) and Al-doped zinc oxide (AZO) films grown by atomic layer deposition (ALD). A detailed analysis of ZnO growth morphology is presented with the help of atomic force microscopy imaging, roughness analysis, and x-ray photoelectron spectroscopy surface chemistry information. Initially the film grew as islands, which coalesced to complete the substrate coverage at 50 ALD cycles. The AZO films to be used as transparent conducting oxides for solar cell applications were grown on single crystalline Si (100) and float-glass substrates at temperatures from 150–325 °C. The amount of aluminum doping was varied from 2 to 8 %. The AZO film with 5% Al exhibited the highest conductivity in the film, which increased as the growth temperature increased. Hall effect measurements of an AZO film of thickness 575 nm doped at 5% on silicon and glass substrates showed a sheet resistance (Rs) of 100 Ω/□, which improved further to 25 Ω/□ after annealing at higher temperatures in an argon-hydrogen environment. The transmittance and reflectance of the films grown on glass substrates were used to calculate the band gap. The band gap of AZO increased with Al-doping level. The transmittance of the films in the entire 0 to 8 % doping range, was found to be 80 to 90 % in the visible region. In addition, the growth rates of ZnO, Al2O3, and AZO films were also studied. The growth rate of the AZO films was 1.95 Å per ALD cycle with a cycle time of 1 s. This growth rate is relatively large for an ALD process. The interface of the AZO-Al2O3-Si(100) imaged using high resolution transmission electron microscopy showed a random texture and a continuous interface.