Direct wafer bonding is one of the most attractive techniques for next-generation semiconductor devices, and plasma has been playing an indispensable role in the wider adoption of the wafer bonding technique by lowering its process temperature. Although numerous studies on plasma-assisted direct wafer bonding have been reported, there is still a lack of deep investigations focusing on the plasma itself. Other than the plasma surface treatment, the wafer bonding process includes multiple steps such as surface cleaning and annealing that require comprehensive studies to maximize the bonding strengths. In this work, we evaluate the various process steps of Si-SiO₂ wafer bonding through case-by-case experimental studies, covering factors including the plasma conditions for surface treatment and secondary factors such as the time intervals between some process steps. The results show that plasma treatment with increasing input power has a trade-off between bonding strengths and interfacial voids, requiring the optimization of the plasma conditions. It is also noticeable that the effects of plasma treatment on wafer bonding can be improved when the plasma-treated wafers are stored in ambient atmosphere before the subsequent process step, which may suggest that wafer exposure to air during the bonding process is advantageous compared to processing entirely in vacuum. The results are expected to allow plasma-assisted direct wafer bonding technology to play a bigger role in the packaging process of semiconductor device manufacturing.

Hybrid bonding technology has emerged as a critical 3D integration solution for advanced semiconductor packaging, enabling simultaneous bonding of metal interconnects and dielectric materials. However, conventional hybrid bonding processes face significant contamination challenges during O₂ plasma treatment required for OH group formation on SiCN or the other dielectric material surfaces. The aggressive plasma conditions cause Cu sputtering and metal migration, leading to chamber and substrate contamination that accumulates over time and degrades process reliability. In this work, we present a novel approach to address these contamination issues by implementing a molybdenum disulfide (MoS₂) barrier layer formed through plasma-enhanced chemical vapor deposition (PECVD) sulfurization of Mo films. The ultrathin MoS₂ layer acts as an effective barrier preventing Cu sputtering during O₂ plasma processing, thereby eliminating chamber contamination, and it also enables post-bonding electrical connectivity through controlled Cu filament formation via memristive switching mechanisms. When voltage is applied to the Cu-MoS₂-Cu structure after hybrid bonding, Cu ions migrate through the MoS₂ layer to form conductive filaments, establishing reliable electrical connections without compromising the bonding interface integrity. This innovative approach successfully resolves the fundamental contamination problem in hybrid bonding while maintaining excellent electrical performance, offering a pathway toward contamination-free and high-yield hybrid bonding processes for next-generation 3D-integrated devices.