Memristors mimic synaptic functions in advanced electronics and image sensors, thereby enabling brain-inspired neuromorphic computing to overcome the limitations of the von Neumann architecture. As computing operations based on von Neumann hardware rely on continuous memory transport between processing units and memory, fundamental limitations arise in terms of power consumption and integration density. In biological synapses, chemical stimulation induces information transfer from the pre- to the post-neuron. The memristor operates as resistive random-access memory (RRAM) and is incorporated into the hardware for neuromorphic computing. Hardware composed of synaptic memristor arrays is expected to lead to further breakthroughs owing to their biomimetic in-memory processing capabilities, low power consumption, and amenability to integration; these aspects satisfy the upcoming demands of artificial intelligence for higher computational loads. Among the tremendous efforts toward achieving human-brain-like electronics, layered 2D materials have demonstrated significant potential owing to their outstanding electronic and physical properties, facile integration with other materials, and low-power computing. This review discusses the memristive characteristics of various 2D materials (heterostructures, defect-engineered materials, and alloy materials) used in neuromorphic computing for image segregation or pattern recognition. Neuromorphic computing, the most powerful artificial networks for complicated image processing and recognition, represent a breakthrough in artificial intelligence owing to their enhanced performance and lower power consumption compared with von Neumann architectures. A hardware-implemented CNN with weight control based on synaptic memristor arrays is expected to be a promising candidate for future electronics in society, offering a solution based on non-von Neumann hardware. This emerging paradigm changes the computing algorithm using entirely hardware-connected edge computing and deep neural networks.

The bifunctionality of chromism-integrated sensors and devices has been highlighted because of their reversibility, fast response, and visual indication. For example, one of the representative chromism electrochromic materials exhibits optical modulation under ion insertion/extraction by applying a potential. This operation mechanism can be integrated with various sensors (pressure, strain, biomolecules, gas, etc.) and devices (energy conversion/storage systems) as visual indicators for user-friendly operation. In this review, recent advances in the field of chromism-integrated systems for visual indicators are categorized for various chromism-integrated sensors and devices. This review can provide insights for researchers working on chromism, sensors, or devices. The integrated chromic devices are evaluated in terms of coloration-bleach operation, cycling stability, and coloration efficiency. In addition, the existing challenges and prospects for chromism-integrated sensors and devices are summarized for further research.

Hybrid bonding technology has emerged as a critical 3D integration solution for advanced semiconductor packaging, enabling simultaneous bonding of metal interconnects and dielectric materials. However, conventional hybrid bonding processes face significant contamination challenges during O₂ plasma treatment required for OH group formation on SiCN or the other dielectric material surfaces. The aggressive plasma conditions cause Cu sputtering and metal migration, leading to chamber and substrate contamination that accumulates over time and degrades process reliability. In this work, we present a novel approach to address these contamination issues by implementing a molybdenum disulfide (MoS₂) barrier layer formed through plasma-enhanced chemical vapor deposition (PECVD) sulfurization of Mo films. The ultrathin MoS₂ layer acts as an effective barrier preventing Cu sputtering during O₂ plasma processing, thereby eliminating chamber contamination, and it also enables post-bonding electrical connectivity through controlled Cu filament formation via memristive switching mechanisms. When voltage is applied to the Cu-MoS₂-Cu structure after hybrid bonding, Cu ions migrate through the MoS₂ layer to form conductive filaments, establishing reliable electrical connections without compromising the bonding interface integrity. This innovative approach successfully resolves the fundamental contamination problem in hybrid bonding while maintaining excellent electrical performance, offering a pathway toward contamination-free and high-yield hybrid bonding processes for next-generation 3D-integrated devices.