The objective of the proposed work was to investigate the electrical performance of a 250 µm-thick 4H-SiC p-n junction detector after irradiation with DT neutrons (14.1 MeV energy) at high temperature (500 °C). The results showed that the current–voltage (I-V) characteristics of the unirradiated SiC detector were ideal, with an ideality factor close to 1.5. A high electron mobility (µ_n) and built-in voltage (V_bi) were also observed. Additionally, the leakage current remained very low in the temperature range of 298–523 K. High-temperature irradiation caused a deviation from ideal behaviour, leading to an increase in the ideality factor, decreases in the µ_n and V_bi values, and a significant rise in the leakage current. Studying the capacitance–voltage (C-V) characteristics, it was observed that neutron irradiation induced reductions in both Al-doped (p⁺-type) and N-doped (n⁻-type) 4H-SiC carrier concentrations. A comprehensive investigation of the deep defect states and impurities was carried out using deep-level transient spectroscopy (DLTS) in the temperature range of 85–750 K. In particular, high-temperature neutron irradiation influenced the behaviours of both the Z_1/2 and EH_6/7 traps, which were related to carbon interstitials, silicon vacancies, or anti-site pairs.

This study investigates the electrical performance of two 4H-SiC p⁺-i-n⁻ diodes, based on lightly doped epitaxial layers, representative of high-voltage and neutron-detector structures. Each design was implemented in multiple nominally identical devices and characterized over the temperature range 298–623 K, with particular attention to the influence of p⁺ layer fabrication, n-type epitaxial layer thickness, and doping concentration. One diode features an ion-implanted p⁺ layer on a 250 µm thick n-type epitaxial layer, while the other employs an epitaxially grown p⁺ layer on a 100 µm thick n-type epitaxial layer. A comparison of reverse-bias Current–Voltage (I–V) and Capacitance–Voltage (C–V) characteristics indicates that, although both designs exhibit high-quality epitaxial 4H-SiC material, devices with an implanted p⁺ anode tend to show a more pronounced temperature-dependence and degradation of selected electrical parameters in reverse bias than those with an epitaxial p⁺ anode, while forward I–V in the range 298–623 K remains broadly similar for both designs. These observations suggest that anode fabrication and epitaxial design may jointly influence thermal stability, recombination mechanisms, and overall electrical performance, offering guidance for the optimization of 4H-SiC-based power and neutron-detector devices for high-temperature and harsh environments.

Silicon Carbide (SiC) based detectors have been appointed as possible candidates for new-generation detectors for both radiation and charged particles. SiC is in fact a material characterized by a high radiation hardness, a strong mechanical resistance and thermal stability. This contribution describes the ongoing activity related to the study of Silicon Carbide devices as dosimeter or real time beam monitor, in the framework of SAMOTHRACE ecosystem. In particular, the development of accurate simulations, using the Geant4 toolkit, that consider the possible different configurations and manufactures of the detector, will be reported. This activity is a crucial step in understanding the contribution from the inter-pixel regions.

Silicon carbide (SiC) detectors continue to emerge as a promising technology for applications requiring radiation hardness, fast response times, and stable operation in harsh environments. In this work, the charge-collection dynamics of ultra-thin membrane SiC detectors are investigated through time-dependent TCAD simulations, consistent with previously reported measurements. The study analyzes the transient response following the localized generation of electron–hole pairs induced by ions, comparing bulk and membrane detector geometries with identical active-layer thicknesses. Two-dimensional simulations provide a time-resolved characterization of the electron and hole current-density distributions within the active region of the device. The results show that both device architectures present a transient current signal featuring two main components. Despite similarities in the prompt drift-driven signal component, the SiC membrane response is characterized by a short secondary component returning to zero within 3.5 × 10^–10 s at zero external bias, making it well-suited for reliable single-ion detection. In contrast, bulk devices exhibit a markedly different response, characterized by a significantly more intense and prolonged secondary component followed by a long tail that does not return to zero within the simulation time window for all investigated reverse biases. This tail is the result of the collection of carriers generated in the substrate that reach the depletion region through diffusion-driven processes. These findings contribute to the optimization of SiC-based solid-state detectors for quantum-technology device fabrication, demonstrating that the removal of the substrate drastically reduces the diffusion-dominated current component, thereby ensuring precise timing and minimal charge loss.

Silicon carbide (SiC) is a wide-bandgap semiconductor that has attracted considerable attention for the development of advanced electronic and sensing devices. Thanks to its combination of high breakdown field, excellent thermal conductivity, and chemical stability, SiC enables operation in conditions where conventional semiconductors fail. In this study, the Optical Beam Induced Current (OBIC) technique will be employed to analyze the electric field distribution within the structure of SiC bipolar diodes featuring varying epitaxial layer thicknesses. To create OBIC signal we have used ultraviolet laser beam. We have tested bipolar diodes with both 10 µm and 100 µm epilayer thicknesses. We have obtained several OBIC signals by re-scanning the same location at different reverse voltages applied to the same SiC diode. Also, Synopsis TCAD simulations of the electric field are reported for both diodes. In these simulations it is possible to observe the increase of the electric field at the edge of the devices that are observed by the OBIC measurements. In conclusion, OBIC technique aids in optimizing device design and improving overall performance.