In this work, a microwave resonator sensor with a unique configuration consisting of three resonators and two feedlines is proposed. This novel design aims to improve the performance and functionality of microwave resonator sensors for various applications. The frequency response of the sensor to materials with different dielectric constants is simulated. The results show that the most sensitive region of the sensor is located on the first interdigital structure, and placing the materials in other regions would enhance the linear correlation of its frequency response. The sensor also exhibits the ability to distinguish whether the same material has defects and the ability to qualitatively detect subtle changes in dielectric constant. Finally, the proposed sensor is fabricated and measured under the condition consistent with the simulation environment. The measured results are basically consistent with the simulation results, which confirms the potential of this sensor in detecting dielectric constants and resolving materials with defects, and the response of the sensor to the materials under test demonstrates its potential in measuring different thicknesses and loss tangents.

Tungsten trioxide (WO₃) exhibits complementary optical and electrical responses toward hydrogen, yet the interplay between interfacial stress, crystal phase stabilization, and gasochromic/chemiresistive performance remains insufficiently understood. In this work, WO₃ films were grown on four single-crystal oxide substrates to systematically tune interfacial stress and thereby modulate the resulting crystal phase, microstructure, and exposed facets. θ–2θ diffraction revealed that WO₃ adopts a monoclinic phase on YAlO₃ and SrLaAlO₄, whereas a high-temperature orthorhombic phase is stabilized on LaAlO₃ (LAO) and SrTiO₃ due to stronger interfacial constraint. Compared with the amorphous quartz reference, the single-crystal substrates significantly enhanced both gasochromic and chemiresistive responses. In particular, the orthorhombic WO₃/LAO film exhibited an electrical response of 1.97 × 10⁴ (R_air/R_H2), an optical transmittance changed of 12.7%, and an electrical response time of 1 s toward 2% H₂ at 80 °C, far exceeding the monoclinic and amorphous counterparts. The combined effects of stress-induced phase stabilization, film orientation, and hydrogen diffusion pathways are shown to govern the non-monotonic sensing trends among different substrates. These findings elucidate the structural origin of hydrogen sensitivity in WO₃ and provide guidance for stress-engineered design of high-performance gasochromic and chemiresistive sensors.