Elena Mozhevitina

Elena Mozhevitina


Research Focus & Metrics

Academic Career Length

3Years (2024-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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11 January 2024 in Crystals
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Journal Article
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ONOleg Nefedov
Oleg Nefedov
ADAlexey Dovnarovich
Alexey Dovnarovich
VKVladimir Kostikov
Vladimir Kostikov
EMElena Mozhevitina
Elena Mozhevitina
DBDmitry Bocharnikov
Dmitry Bocharnikov
IAIgor Avetissov
Igor Avetissov
The problem of intensification of the melt crystal growth process has been analyzed using CdTe as an actual material. Numerical simulation of 100 mm diameter CdTe crystal growth using the VGF technique has been carried out. The heat–mass transfer was controlled by introducing low-frequency oscillating baffle into the melt, which is a so-called axial vibrational control (AVC) technique. The baffle configuration has been optimized to destroy solid “tails”, which were formed near the crucible walls at high cooling rates due to the low thermoconductivity and the corresponding latent heat. Analysis of CdTe homogeneity range showed that during fast crystal cooling, Te micro precipitations were formed, resulting from the decay of oversaturated Cd-rich nonstoichiometric solid solution during the Bridgman crystal growth technique. After full crystallization, a VGF-grown CdTe crystal stays inside the phase field of the high-temperature wurtzite polymorph. This makes it possible to go through the polymorph transition without Te micro-precipitating using the advantages of the VGF-specific feature of very slow cooling.

14 December 2025 in Crystals
Verified
Journal Article
Open access
PDF file
EVElena Voronina
Elena Voronina
EMElena Mozhevitina
Elena Mozhevitina
KKKarina Kim
Karina Kim
VSViktoria Solomatina
Viktoria Solomatina
RARoman Avetisov
Roman Avetisov
IAIgor Avetissov
Igor Avetissov
The general procedure for measurement of impurities in hot zones of high-temperature growth setups is proposed and developed. In the first step, we prepared extra-pure 15 × 15 × 8 mm collecting cubes from composite graphite by high-temperature annealing in dry dynamic vacuum. The collecting cubes were placed in different parts of the hot zones of growth setups. We tested two types of crystal growth setups: single- and multi-crucible growth setups of a VGF configuration for AIIIBV semiconductors’ crystal growth. The hot zones of the setups were built from different types of graphite materials and high-temperature dielectric ceramics (BN and Al2O3) as insulators. The growth setups with collecting cubes without raw crystal materials were heated to operating temperatures, exposed for certain operating periods, and cooled to room temperature. The cubes were taken off and analyzed by extraction of condensed impurities into an analytic super-pure acid. The extracted impurities in the acid were determined by ICP-MS analysis. We showed that the hot zone of a single-crucible growth setup was nearly twice as pure (averaged 2.45 mg/g) compared with the hot zone of a multi-crucible setup (averaging 4.06 mg/g) because of the different graphite materials of the constructions.