The general procedure for measurement of impurities in hot zones of high-temperature growth setups is proposed and developed. In the first step, we prepared extra-pure 15 × 15 × 8 mm collecting cubes from composite graphite by high-temperature annealing in dry dynamic vacuum. The collecting cubes were placed in different parts of the hot zones of growth setups. We tested two types of crystal growth setups: single- and multi-crucible growth setups of a VGF configuration for A^IIIB^V semiconductors’ crystal growth. The hot zones of the setups were built from different types of graphite materials and high-temperature dielectric ceramics (BN and Al₂O₃) as insulators. The growth setups with collecting cubes without raw crystal materials were heated to operating temperatures, exposed for certain operating periods, and cooled to room temperature. The cubes were taken off and analyzed by extraction of condensed impurities into an analytic super-pure acid. The extracted impurities in the acid were determined by ICP-MS analysis. We showed that the hot zone of a single-crucible growth setup was nearly twice as pure (averaged 2.45 mg/g) compared with the hot zone of a multi-crucible setup (averaging 4.06 mg/g) because of the different graphite materials of the constructions.