We have investigated shot noise in graphene field effect devices in the temperature range of 4.2–30 K at low frequency ($f=600–850\mathrm{MHz}$). We find that for our graphene samples with a large width over length ratio $W/L$, the Fano factor $\mathfrak{F}$ reaches a maximum $\mathfrak{F}\sim 1/3$ at the Dirac point and that it decreases strongly with increasing charge density. For smaller $W/L$, the Fano factor at Dirac point is significantly lower. Our results are in good agreement with the theory describing that transport at the Dirac point in clean graphene arises from evanescent electronic states.

We have measured shot noise in single-walled carbon nanotubes with good contacts at 4.2 K at low frequencies ($f=600–850\mathrm{MHz}$). We find a strong modulation of shot noise over the Fabry-Perot pattern; in terms of the differential Fano factor the variation ranges over 0.4–1.2. The shot noise variation, in combination with differential conductance, is analyzed using two (spin-degenerate) modes with different, energy-dependent transmission coefficients. Deviations from the predictions from Landauer-Buttiker formalism are assigned to electron-electron interactions.

We present an extensive experimental and theoretical study of the proximity effect in InAs nanowires connected to superconducting electrodes. We fabricate and investigate devices with suspended gate-controlled nanowires and nonsuspended nanowires, with a broad range of lengths and normal-state resistances. We analyze the main features of the current-voltage characteristics: the Josephson current, excess current, and subgap current as functions of length, temperature, magnetic field, and gate voltage, and compare them with theory. The Josephson critical current for a short-length device, $L=30$ nm, exhibits a record high magnitude of 800 nA at low temperature that comes close to the theoretically expected value. The critical current in all other devices is typically reduced compared to the theoretical values. The excess current is consistent with the normal resistance data and agrees well with the theory. The subgap current shows a large number of structures; some of them are identified as subharmonic gap structures generated by multiple Andreev reflection. The other structures, detected in both suspended and nonsuspended devices, have the form of voltage steps at voltages that are independent of either the superconducting gap or length of the wire. By varying the gate voltage in suspended devices, we are able to observe a crossover from typical tunneling transport at large negative gate voltage, with suppressed subgap current and negative excess current, to pronounced proximity junction behavior at large positive gate voltage, with enhanced Josephson current and subgap conductance as well as a large positive excess current.

Broadband optical absorption structures in the near infrared by coupling monolayer-graphene with periodical metal structures are proposed and demonstrated numerically. Optical absorption of graphene with over-50%-absorption bandwidth up to hundreds of nanometer caused by magnetic dipole resonances and magnetic coupling effect are investigated in detail, and the demonstrated bandwidths are one order higher than those caused by dielectric guiding mode resonances. In addition, the influences of geometrical parameters of structures are fully analyzed and these demonstrated structures show angular-insensitive absorption for oblique incidence in a large angular range. The demonstrated absorption structures in this work provide new design ideas in the realization of advanced graphene-based optoelectronic devices.