The thermal and gate-voltage dependencies for the capture and emission times of random telegraph signals have been theoretically analyzed in a ${\mathrm{S}\mathrm{i}-\mathrm{S}\mathrm{i}\mathrm{O}}_2$ interface. A quasi-two-dimensional treatment of the interaction between a neutral near-interface oxide trap and an electron in the subband of the inversion layer has been developed to obtain expressions for the capture and emission times where the influence of the trap parameters (energy depth, distance to the interface, and electron-phonon coupling factor) is clearly shown. This analysis combines multiphonon-emission theory, tunnel transition probability and the electrostatic Coulomb barrier effect, allowing us to reproduce experimental data for traps in different devices, temperatures, and bias conditions. As a result, trap distances to the interface, trap energy levels, and electron-phonon couplings have been calculated. The character of single electron transitions in this process let us show that the ground and first excited subbands, with similar capture and emission times, are the most important contributors to the phenomenon.

A physical model for trap-assisted inelastic tunnel current through potential barriers in semiconductor structures has been developed. The model is based on the theory of multiphonon transitions between detrapped and trapped states and the only fitting parameters are those of the traps (energy level and concentration) and the Huang–Rhys factor. Therefore, dependences of the trapping and detrapping processes on the bias, position, and temperature can be obtained with this model. The results of the model are compared with experimental data of stress induced leakage current in metal-oxide-semiconductor devices. The average energy loss has been obtained and an interpretation is given of the curves of average energy loss versus oxide voltage. This allows us to identify the entrance of the assisted tunnel current in the Fowler–Nordheim regime. In addition, the dependence of the tunnel current and average energy loss on the model parameters has been studied.

The direct and assisted-by-trap elastic tunnel current in metal–oxide–semiconductor capacitors with ultrathin gate oxide (1.5–3.6 nm) has been studied. Bardeen’s method has been adapted to obtain the assisted tunnel current, in addition to the direct tunnel current. The dependence of the assisted current on the trap distribution in energy has also been analyzed. This allows us to obtain the trap distribution in energy from experimental current curves. Finally, we have analyzed the role of the image force, the inclusion of which can avoid a barrier height dependence on the oxide thickness.

A comprehensive model for Coulomb scattering in inversion layers is presented. This model simultaneously takes into account the effects of: (i) the screening of charged centers by mobile carriers, (ii) the distribution of charged centers inside the structure, (iii) the actual electron distribution in the inversion layer, (iv) the charged‐center correlation, and (v) the effect of image charges. A Monte Carlo calculation to obtain the effective mobility of electrons in an n‐Si(100) inversion layer by using the model proposed for Coulomb scattering has been developed. The importance of correctly taking into account the effects above to study Coulomb scattering in inversion layers is pointed out.