The thermal and gate-voltage dependencies for the capture and emission times of random telegraph signals have been theoretically analyzed in a ${\mathrm{S}\mathrm{i}-\mathrm{S}\mathrm{i}\mathrm{O}}_2$ interface. A quasi-two-dimensional treatment of the interaction between a neutral near-interface oxide trap and an electron in the subband of the inversion layer has been developed to obtain expressions for the capture and emission times where the influence of the trap parameters (energy depth, distance to the interface, and electron-phonon coupling factor) is clearly shown. This analysis combines multiphonon-emission theory, tunnel transition probability and the electrostatic Coulomb barrier effect, allowing us to reproduce experimental data for traps in different devices, temperatures, and bias conditions. As a result, trap distances to the interface, trap energy levels, and electron-phonon couplings have been calculated. The character of single electron transitions in this process let us show that the ground and first excited subbands, with similar capture and emission times, are the most important contributors to the phenomenon.

Knowledge of the nature of charge transfer processes at the semiconductor/electrolyte interface is crucial for the optimization of semiconductors used for solar fuel production. In the literature, there are two types of charge transfer mechanisms: (i) direct hole transfer from the valence band and (ii) indirect hole transfer via surface states. In this paper, we discuss both processes in the steady state regime through full drift-diffusion simulations considering the concomitant influence of the electric field and surface states at the semiconductor/electrolyte interface. We discuss the role of surface states and valence band holes in the photo-anodic current. We subsequently analyze both hole transfer processes in a dynamic regime via the impedance spectroscopy (IS) method. We provide a solid criterion to discriminate both mechanisms and discuss some experimental examples from the literature.

A comprehensive model for Coulomb scattering in inversion layers is presented. This model simultaneously takes into account the effects of: (i) the screening of charged centers by mobile carriers, (ii) the distribution of charged centers inside the structure, (iii) the actual electron distribution in the inversion layer, (iv) the charged‐center correlation, and (v) the effect of image charges. A Monte Carlo calculation to obtain the effective mobility of electrons in an n‐Si(100) inversion layer by using the model proposed for Coulomb scattering has been developed. The importance of correctly taking into account the effects above to study Coulomb scattering in inversion layers is pointed out.