In this paper, a methodology is proposed for studying the current collapse effects of Gallium Nitride (GaN) power diodes and the consequences on the dynamic on-resistance (RON). Indeed, the growing interest of GaN based, high frequency power conversion requires an accurate characterization and a deep understanding of the device’s behaviour before any development of power converters. This study can ultimately be used to model observed trap effects and, thus, improve the equivalent electrical model. Using an in-house circuit and a specific experimental setup, a current-collapse phenomenon inherent to gallium nitride semiconductor is studied on planar 650 V—6 A GaN diodes by applying high voltage stresses over a wide range of temperatures. With this method, useful data on activation energy and capture cross section of electrical defects linked to dynamic RON are extracted. Finally, the origins of such defects are discussed and attributed to carbon-related defects.

This paper reports on the fabrication, physical characterization, and non-linear modeling of 100 nm slanted-gate GaN-on-silicon HEMTs processed using a CMOS-compatible platform. This technology enables state-of-the-art DC and RF performance, with a maximum drain current density of 0.9 A/mm, a peak transconductance of 605 mS/mm, and cut-off frequencies f_T = 85 GHz and f_max = 220 GHz at V_DS = 10 V. Trapping effects investigated via conductance-versus-frequency (G–f) spectroscopy reveal two distinct interface trap populations (D_it ~ 2–3 × 10¹³ cm⁻²/eV), whose temperature-dependent dynamics deviate from the Shockley–Read–Hall model and are attributed to multiphonon emission and quantum tunneling mechanisms, respectively. An enhanced Angelov-based compact model incorporating dedicated self-heating and current-collapse sub-circuits with capacitances derived directly from measured trap densities is validated through pulsed I-V and load-pull measurements, achieving excellent agreement at 40 GHz with a saturation output power of 24 dBm and a power-added efficiency (PAE) of 51%. These results establish a promising CMOS-compatible GaN-on-Si platform for Ka-band and millimeter-wave power amplifier applications.