High-power impulse magnetron sputtering (HiPIMS) technology was used to deposit Ti-Nb-Cr films on Si (100) and 316L substrates by changing the peak power of the Ti-Nb-Cr target. Optical emission spectroscopy (OES) was used to study the effect of peak power on the ion atomic arrival ratio in front of the substrate. Experimental instruments such as an X-ray diffraction (XRD) device, scanning electron microscope (SEM), transmission electron microscope (TEM), nanohardness tester, ball-disk reciprocating friction machine, and electrochemical workstation were used to study the effects of the atomic arrival ratio of Ti, Nb, and Cr ions on the microstructure, mechanical properties, and corrosion resistance of Ti-Nb-Cr films. The results show that when the peak power is 67.84 kW, the ion atomic arrival ratio of Ti reaches 47.57%, the ion atomic arrival ratio of Nb reaches 39.41%, and the ion atomic arrival ratio of Cr reaches 10.6%. The ion atomic arrival ratio is doubled compared to the peak power of 51.04 kW. The films prepared at different peak powers all show diffraction peaks of the BCC structure. At high power levels, the TiNbCr films exhibit reduced residual compressive stress, although this may be accompanied by lower hardness and wear resistance.