This study systematically investigates the intrinsic vertical breakdown characteristics of 8-inch GaN-on-Si high-electron-mobility transistor (HEMT) buffer layers (extending up to the GaN channel layer) using a vertical electrode configuration. By comparing samples with different carbon doping doses, AlN insertion layers, and superlattice cycle numbers (buffer layer thickness), combined with Technology Computer-Aided Design (TCAD) simulations, the relevant mechanisms are revealed. The results show that buffer layer thickness is a critical factor determining the vertical breakdown voltage. Its increase effectively reduces the longitudinal average electric field, widens the depletion region, and increases the breakdown voltage by approximately 50%. Carbon doping compensates for carriers and suppresses leakage through deep-level acceptor traps. Inserting thin AlN layers into the superlattice has a limited effect on improving breakdown voltage. This research provides clear experimental guidance for the optimal design of high-voltage GaN HEMT buffer layers from both material and physical perspectives.