In this paper, we present and simulates a very sensitive label-free biosensor that uses Si:HfO ₂ ferroelectric junction less tunnel field-effect transistor (FE-JL-TFET) charge/dielectric modulation. For the first time Negative capacitance (NC) behavior is made possible by the ferroelectric gate stacking of Si-doped HfO ₂ in the dual inverted-T cavity with T-shaped channel is used in the biosensor design. Using a sacrificial etching approach, two cavities are formed in the gate-source underlap areas to detect biomolecules such as Lipid (K=3), Carbohydrates (K=5), Plant protein Zein (K=7), Amino acids (K=12) and MDA-MB-231 (Breast Cancer cell, K=22). For both charged and neutral biomolecules the biosensor has shown increased sensitivity. The biomolecules that are neutrally, positively and negatively charged have maximal values of the I _on /I _off ratio that reach as high as 4.65x10 ¹⁰ , 6.24X10 ¹⁰ and 9.47x10 ¹⁰ respectively. It has been noted that the proposed device sensing performance can be greatly enhanced by optimizing the cavity height and length. For Neutral, Negative and Positive charged biomolecules, the proposed biosensor sensitivity has been greatly increased to 8.61X10 ⁴ , 7.93X10 ³ , and 1.05X10 ⁵ respectively. It has shown better sensitivity when compared with other advanced biosensors.

In this paper, we have designed, simulated, fabricated and characterized a clamped-clamped micro mechanical structure based shunt capacitive RF MEMS switch. The clamped-clamped micromechanical structure is micromachined using gold metal thickness of 500 nm. AlN is used as dielectric material, and it is deposited using DC sputtering PVD process. In MEMS Technology, particularly in devices fabrication, releasing the membrane is a difficult task, here we have presented a novel wet process to release the membrane. Primarily the S1813 sacrificial layer is etched by using piranha solution and cleaned with IPA solution. Critical point drying is done after fabrication to reduce the stiction effect on the switch. Overall, the switch requires the pull-in voltage of 5.5 V for 1.8 μm displacement. In the process of optimization, primarily the switch is designed and simulated using finite element method tools. The reliability of the capacitive RF MEMS switches depends on the stiction problem caused by dielectric charging, the proposed capacitive switch dielectric charging behavior is characterized using CV curve method.