Perovskite solar cells have achieved photo-conversion efficiencies greater than 20%, making them a promising candidate as an emerging solar cell technology. While perovskite solar cells are expected to eventually compete with existing silicon-based solar cells on the market, their long-term stability has become a major bottleneck. In particular, perovskite films are found to be very sensitive to external factors such as air, UV light, light soaking, thermal stress and others. Among these stressors, light, oxygen and moisture-induced degradation can be slowed by integrating barrier or interface layers within the device architecture. However, the most representative perovskite absorber material, CH₃NH₃PbI₃ (MAPbI₃), appears to be thermally unstable even in an inert environment. This poses a substantial challenge for solar cell applications because device temperatures can be over 45 °C higher than ambient temperatures when operating under direct sunlight. Herein, recent advances in resolving thermal stability problems are highlighted through literature review. Moreover, the most recent and promising strategies for overcoming thermal degradation are also summarized.

Carbon is inherently abundant in nature and relatively inexpensive, which can potentially reduce the manufacturing cost of solar cells. In recent years, carbon has been used as a hole transport layer or counter electrode in perovskite solar cells. Herein, we demonstrate that carbon can also be used as a charge transport layer capable of enhancing the energy conversion efficiency of a CH₃NH₃PbI_3−xCl_x solar cell when carbon is combined with PCBM. Particularly, we have been able to deposit an ultra-flat carbon layer using an e-beam irradiation method, which exhibited much better conductivity than the competitive PCBM/C60 layer. In addition, quantitative analysis of interfacial charge dynamics shows that the quenching efficiency of PCBM/carbon is comparable to that of PCBM/C60 but better interface defect passivation and improved series and shunt resistances were observed when PCBM/carbon was employed. For the photovoltaic performance, the reference perovskite solar cell fabricated from the widely used PCBM/C60 has a power conversion efficiency (PCE) of 14% while the perovskite solar cell with PCBM/carbon has an increased PCE of 16%. Our results demonstrate the potential of the use of cost-effective carbon for perovskite solar cells, which could reduce production costs.

We explore a new characterization approach capable of probing the grain interior (GI) and grain boundary (GB) of a CH₃NH₃PbI_3−xCl_x perovskite thin film. In particular, we have found that the photoluminescence (PL) spectrum observed for a CH₃NH₃PbI_3−xCl_x perovskite thin film is asymmetric, and can be deconvoluted using a bi-Gaussian function, representing the ordered and disordered phases of the perovskite film. In order to understand the origin of the ordered and disordered phases of the perovskite film, two-dimensional (2D) PL mapping was performed to resolve the PL spectra at the nanoscale level. Quantitative analysis of the local PL spectra revealed that the ordered phase originated from the GIs while the disordered phase mainly came from the GBs. In particular, power-dependent PL measurements of the deconvoluted PL spectra revealed that smaller grained perovskites showed defect-mediated recombination at GBs but exciton-like transitions at GIs. In contrast, perovskite films with large grains followed an excellent power law, showing exciton-like recombination at both GIs and GBs. As expected, perovskite solar cells fabricated with large grains showed an increased efficiency with higher light absorption and higher charge extraction efficiency.

Recently, organic–inorganic mixed halide perovskite (MAPbX₃; MA = CH₃NH₃⁺, X = Cl^–, Br^–, or I^–) single crystals with low defect densities have been highlighted as candidate materials for high-efficiency photovoltaics and optoelectronics. Here we report the optical and structural investigations of mixed halide perovskite (MAPbBr_3–xI_x) single crystals. Mixed halide perovskite single crystals showed strong light soaking phenomena with light illumination conditions that were correlated to the trapping and detrapping events from defect sites. By systematic investigation with optical analysis, we found that the pseudocubic phase of mixed halide perovskites generates light soaking phenomena. These results indicate that photoinduced changes are related to the existence of multiple phases or halide migrations.

GaN epitaxial layers have been grown by molecular beam epitaxy (MBE). Low (200 °C) and high (700 °C) temperature nitrided sapphire substrates, and GaN and AlN buffer layers have been used as the platforms for investigating polarity selection processes of GaN grown by RF-MBE, aimed at presenting a comprehensive understanding of the issues of GaN polarity and growth conditions. The results show that Ga-polar GaN results from the use of AlN buffer layers, and when the substrate/bulk interface has a Ga- or Al-rich interface. In contrast, a large density of N-polar domains is found when GaN epitaxial films are grown on GaN buffer layers on sapphire when nitrided at 200 °C. The impact of the polarity of GaN on the interaction of GaN surfaces with atomic hydrogen is also studied. A different reaction rate and reaction extent is found for N- and Ga-polar GaN with atomic hydrogen, with N-polar GaN exhibiting greater reactivity. It is also demonstrated that the reactivity of GaN with atomic hydrogen coupled with surface potential measurements exploiting Kelvin probe microscopy is an alternative approach to determining the polarity of GaN films, and identifying the presence of inversion domains. Finally, the impact of GaN polarity on electrical properties of AlGaN/GaN heterojunction structures is also shown.