Circuit-level analytical models for hard-switching, soft-switching, and $dv/ dt$ -induced false turn on of SiC MOSFETs and their experimental validation are described. The models include the high-frequency parasitic components in the circuit and enable fast, accurate simulation of the switching behavior using only datasheet parameters. To increase the accuracy of models, nonlinearities in the junction capacitances of the devices are incorporated by fitting their nonlinear curves to a simple equation. The numerical solutions of the analytical models provide more accurate prediction than an LTspice simulation with a threefold reduction in the simulation time. The analytical models are evaluated at 25 °C and 125 °C. The effect of snubber capacitors on the soft-switching waveforms is explained analytically and validated experimentally, which enables the techniques to be used to evaluate future soft-switching solutions. Finally, the $dv/ dt$ -induced false turn-on conditions are predicted analytically and validated experimentally. It was observed that consideration of nonlinearities in the junction capacitances ensures accurate prediction of false turn on, and that the small shoot-through current due to false turn on can increase the switching loss by 8% for an off-state gate bias of −2 V.

Vienna rectifiers have gained popularity in recent years for AC to DC power conversion for many industrial applications such as welding power supplies, data centers, telecommunication power sources, aircraft systems, and electric vehicle charging stations. The advantages of this converter are low total harmonic distortion (THD), high power density, and high efficiency. Due to the inherent current control loop in the voltage-oriented control strategy proposed in this paper, good steady-state performance and fast transient response can be ensured. The proposed voltage-oriented control of the Vienna rectifier with a PI controller (VOC-VR) has been simulated using MATLAB/Simulink. The simulations indicate that the input current THD of the proposed VOC-VR system was below 3.27% for 650V and 90A output, which is less than 5% to satisfy the IEEE-519 standard. Experimental results from a scaled-down prototype showed that the THD remains below 5% for a wide range of input voltage, output voltage, and loading conditions (up to 2 kW). The results prove that the proposed rectifier system can be applied for high power applications such as DC fast-charging stations and welding power sources.

This paper proposes an integrated on-board charger (IOBC) for Electric Vehicles (EVs) based on an isolated three-port DC-DC converter. The proposed architecture integrates the on-board charger (OBC) and the auxiliary power module (APM) in a single multiport converter, offering low component count. The proposed converter is capable of charging high-voltage (HV) and low-voltage (LV) batteries simultaneously, over the entire battery voltage ranges. A three-winding transformer is used to provide galvanic isolation between the converter ports and consequently, power flow is coupled among the three ports. In this paper, a boundary condition is derived for the first time and a novel modulation scheme is proposed to regulate the power flow at the HV and LV ports independently, utilizing the converter’s 3-degrees-of-freedom (DOF). Hence, charging of the HV and LV batteries can be realized similar to dual-active-bridge (DAB) and phase-shifted full-bridge (PSFB) converter, respectively. Results show that all converter semiconductor devices operate with zero-voltage-switching (ZVS) over wide power and voltage range without the need of additional resonant components, due to the proposed 3-DOF selection scheme. A 3.5kW hardware prototype of the proposed converter is built and tested and key experimental results are presented to verify the converter theoretical analysis and ZVS operation.

The enormous number of automobiles across the world has caused a significant increase in emissions of greenhouse gases, which pose a grave and mounting threat to modern life by escalating global warming and polluting air quality. These adverse effects of climate change have motivated the automotive sector to reform and have pushed the drive towards the transformation to fully electric. Charging time has been identified as one of the key barriers in large-scale applications of Electric Vehicles (EVs). In addition, various challenges are associated with the formulation of a safe charging scheme, which is concerned with appropriate charging converter architecture, with the aim of ensuring a safe charging protocol within a range of 5–10 min. This paper provides a systematic review of thharging technologies and their impacts on battery systems, including charger converter design and associated limitations. Furthermore, the knowledge gap and research directions are provided with regard to the challenges associated with the charger converter architecture design at the systems level.

Accurately predicting the temperature of semiconductor devices is very important in the initial design of power electronics converter. RC thermal models derived from well-known methods have some ability to predict the temperature. However, the accuracy is boundary condition specific, hence, these methods cannot be used in the reliability analysis. To make the thermal model more accurate and robust the factors contributing to discrepancies need to be analyzed carefully. These are power-module-materials’ non-linear properties, thermal grease layer and the cooling system (i.e., liquid-cooled cold plate). In this work, estimation of accurate RC parameters from FEA thermal model is demonstrated in COMSOL. The electrical model having temperature dependent power loss model is coupled to refined thermal model and solved in a circuit simulator, PLECS. The proposed method is applied in two applications: assessing thermal interaction between IGBTs and anti-parallel diodes in a half-bridge power module, and assessing thermal interaction among the discrete switches in an interleaved bidirectional DC-DC converter. Results show that the impact of material non-linearity, thermal grease layer and cooling boundary conditions are significant for accurate prediction of IGBT and diode temperatures. The proposed model is consistent to FEA results and differs by 2-6.5% comparing to the experimental results.