As the core device of the miniature quantum dot (QD) spectrometer, the morphology control of the filter film array cannot be ignored. We eliminated strong interference from additives on the spectrum of a long-wave infrared (LWIR) QD filter film by selecting volatile additives. This work is significant for detecting targets by spectroscopic methods. In this work, a filter film with characteristic spectral bands located in the LWIR was obtained by the natural evaporation of QD ink, which was prepared by mixing various volatile organic solvents with HgSe QD–toluene solution. The factors affecting the morphology of HgSe LWIR films, including ink surface tension, particle size, and solute volume fraction, were the main focus of the analysis. The experimental results suggested that the film slipped in the evaporation process, and the multilayer annular deposition formed when the surface tension of the ink was no more than 24.86 mN/m. The “coffee ring” and the multilayer annular deposition essentially disappeared when the solute particles were larger than 188.11 nm. QDs in the film were accumulated, and a “gully” morphology appeared when the solute volume fraction was greater than 0.1. In addition, both the increase rate of the film height and the decrease rate of the transmission slowed down. The relationship between film height and transmission was obtained by fitting, and the curve conformed to the Lambert–Beer law. Therefore, a uniform and flat film without “coffee rings” can be prepared by adjusting the surface tension, particle size, and volume fraction. This method could provide an empirical method for the preparation of LWIR QD filter film arrays.

In this paper, the recent advances in MOF, polymer and MOF/polymer-based PC sensors over the past ten years were summarized.

HgSe quantum dots (QDs) were synthesized by a thermal injection method. The effects of material ratio, growth time, and reaction temperature on the growth and spectral properties of the QDs have been studied. The experimental results show that the QDs had the highest yield of 53.04% when the molar ratio of Se source to Hg source was 1.5. Also, the excess source of SeS2 was reduced to Se. In addition, the critical radius and spectral red-shift rate of QDs can be increased with the reaction temperature. When the reaction temperature was increased to 100 degrees C, the spectrum reached far-infrared and the growth rate was increased to 10 times and reached 0.63 nm/min. Differing particle morphologies can be obtained by increasing the growth time to 40 min. Moreover, the growth rate reached the minimum at 30 min and the maximum at 80 min of the growth time. This study can provide guidance for the synthesis of long-wave infrared QD materials.