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S.R.S. Prabaharan
Directorate of Research SRM Institute of Science and Technology Kattankulathur Chengalpattu Tamilnadu 603203 India

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Journal article
Published: 03 August 2021 in Computers in Biology and Medicine
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SARS-COV2 (Covid-19) prevails in the form of multiple mutant variants causing pandemic situations around the world. Thus, medical diagnosis is not accurate. Although several clinical diagnostic methodologies have been introduced hitherto, chest X-ray and computed tomography (CT) imaging techniques complement the analytical methods (for instance, RT-PCR) to a certain extent. In this context, we demonstrate a novel framework by employing various image segmentation models to leverage the available image databases (9000 chest X-ray images and 6000 CT scan images). The proposed methodology is expected to assist in the prognosis of Covid-19-infected individuals through examination of chest X-rays and CT scans of images using the Deep Covix-Net model for identifying novel coronavirus-infected patients effectively and efficiently. The slice of the precision score is analysed in terms of performance metrics such as accuracy, the confusion matrix, and the receiver operating characteristic curve. The result leans on the database obtainable in the GitHub and Kaggle repository, conforming to their endorsed chest X-ray and CT images. The classification performances of various algorithms were examined for a test set with 1800 images. The proposed model achieved a 96.8% multiple-classification accuracy among Covid-19, normal, and pneumonia chest X-ray databases. Moreover, it attained a 97% accuracy among Covid-19 and normal CT scan images. Thus, the proposed mechanism achieves the rigorousness associated with the machine learning technique, providing rapid outcomes for both training and testing datasets.

ACS Style

Dasari Naga Vinod; B. Rebecca Jeyavadhanam; Adamu Murtala Zungeru; S.R.S. Prabaharan. Fully automated unified prognosis of Covid-19 chest X-ray/CT scan images using Deep Covix-Net model. Computers in Biology and Medicine 2021, 136, 104729 -104729.

AMA Style

Dasari Naga Vinod, B. Rebecca Jeyavadhanam, Adamu Murtala Zungeru, S.R.S. Prabaharan. Fully automated unified prognosis of Covid-19 chest X-ray/CT scan images using Deep Covix-Net model. Computers in Biology and Medicine. 2021; 136 ():104729-104729.

Chicago/Turabian Style

Dasari Naga Vinod; B. Rebecca Jeyavadhanam; Adamu Murtala Zungeru; S.R.S. Prabaharan. 2021. "Fully automated unified prognosis of Covid-19 chest X-ray/CT scan images using Deep Covix-Net model." Computers in Biology and Medicine 136, no. : 104729-104729.

Research article
Published: 01 August 2021 in International Journal of Energy Research
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A novel pH switch over of the electrolyte in all aqueous Redox Flow Battery (RFB) is studied to augment its voltage efficiency, capacity retention and volumetric capacity. By switching the pH of the anolyte from 2 to 5, the cell voltage stabilized at 0.44 V from 0.85 V vs SHE. pH switch over caused increase in the volumetric capacity from 64 mAh/l to 75 mAh/l. The device showed constant capacity of 40 mAh/l up to 200 cycles with 53% capacity retention. The device performed up to 200 cycles and 720 hours of operation, even in the presence of undesirable side reactions such as Hydrogen Evolution Reaction (HER). Thus by improving the design parameters, one can anticipate all aqueous RFB may be scaled up for practical applications.

ACS Style

Seshadri Harinipriya; Rupayan Ghosh; Savari Rathinam Sahaya Prabaharan; Venkatachalam Sudha. pH switch over a cause for high efficiency all‐aqueous CuSO 4 /[Fe( CN ) 6 ] 3− redox flow battery. International Journal of Energy Research 2021, 1 .

AMA Style

Seshadri Harinipriya, Rupayan Ghosh, Savari Rathinam Sahaya Prabaharan, Venkatachalam Sudha. pH switch over a cause for high efficiency all‐aqueous CuSO 4 /[Fe( CN ) 6 ] 3− redox flow battery. International Journal of Energy Research. 2021; ():1.

Chicago/Turabian Style

Seshadri Harinipriya; Rupayan Ghosh; Savari Rathinam Sahaya Prabaharan; Venkatachalam Sudha. 2021. "pH switch over a cause for high efficiency all‐aqueous CuSO 4 /[Fe( CN ) 6 ] 3− redox flow battery." International Journal of Energy Research , no. : 1.

Research article
Published: 27 July 2021 in Energy Technology
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Compositionally controlled hierarchically porous monolithic carbon foams synthesized via silica hard templating technique are used as electrodes for symmetrical supercapacitors. Fifteen carbon monoliths are prepared by controlling net quantity of modified silica particles per gram of oily phase, the quantity of oil phase (vol%), and the resin concentration (wt%), exhibiting Brunauer–Emmett–Teller (BET) surface area ranging from 700 to 900 m2 g−1 are chosen to study the profound effect of the influence of pore size and its distribution on their capacitive performance in an aqueous electrolyte using cyclic voltammetry (CV), galvanostatic charge/discharge, and impedance spectroscopy techniques. The typical rectangular shape CV profile illustrates the capacitive properties of these carbon foams. It is found that mesopores facilitate the diffusion of electrolyte ions (aqueous potassium hydroxide (KOH)) deep into the micropores by providing transmission line-like pathways. In contrast, micropores enrich the density of charge separation that determines the magnitude of charge storage across electric double layers leading to high capacitance, 122 F g−1 for hierarchically porous carbon foam, namely 8/70C60. The coin type (form factor CR2032) symmetrical supercapacitor is fabricated using the best performing carbon (8/70C60), yielding high capacitance retention of 98.2% for 20 000 cycles and achieving a good power density of 76.8 kW kg−1.

ACS Style

M. D. S. Michael; K. S. Kesavan; S. R. S. Prabaharan. Efficient Charge Storage in Hierarchically Porous Carbon Foams for Supercapacitor Applications. Energy Technology 2021, 2100252 .

AMA Style

M. D. S. Michael, K. S. Kesavan, S. R. S. Prabaharan. Efficient Charge Storage in Hierarchically Porous Carbon Foams for Supercapacitor Applications. Energy Technology. 2021; ():2100252.

Chicago/Turabian Style

M. D. S. Michael; K. S. Kesavan; S. R. S. Prabaharan. 2021. "Efficient Charge Storage in Hierarchically Porous Carbon Foams for Supercapacitor Applications." Energy Technology , no. : 2100252.

Journal article
Published: 30 July 2020 in Chaos, Solitons & Fractals
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The rapid spread of novel coronavirus (namely Covid-19) worldwide has alarmed a pandemic since its outbreak in the city of Wuhan, China in December 2019. While the world still tries to wrap its head around as to how to contain the rapid spread of the novel coronavirus, the pandemic has already claimed several thousand lives throughout the world. Yet, the diagnosis of virus spread in humans has proven complexity. A blend of computed tomography imaging, entire genome sequencing, and electron microscopy have been at first adapted to screen and distinguish SARS-CoV-2, the viral etiology of Covid-19. There are a less number of Covid-19 test kits accessible in hospitals because of the expanding cases every day. Accordingly, it is required to utensil a self-exposure framework as a fast substitute analysis to contain Covid-19 spreading among individuals considering the world at large. In the present work, we have elaborated a prudent methodology that helps identify Covid-19 infected people among the normal individuals by utilizing CT scan and chest x-ray images using Artificial Intelligence (AI). The strategy works with a dataset of Covid-19 and normal chest x-ray images. The image diagnosis tool utilizes decision tree classifier for finding novel corona virus infected person. The percentage accuracy of an image is analyzed in terms of precision, recall score and F1 score. The outcome depends on the information accessible in the store of Kaggle and Open-I according to their approved chest X-ray and CT scan images. Interestingly, the test methodology demonstrates that the intended algorithm is robust, accurate and precise. Our technique accomplishes the exactness focused on the AI innovation which provides faster results during both training and inference.

ACS Style

Dasari Naga Vinod; S.R.S. Prabaharan. Data science and the role of Artificial Intelligence in achieving the fast diagnosis of Covid-19. Chaos, Solitons & Fractals 2020, 140, 110182 -110182.

AMA Style

Dasari Naga Vinod, S.R.S. Prabaharan. Data science and the role of Artificial Intelligence in achieving the fast diagnosis of Covid-19. Chaos, Solitons & Fractals. 2020; 140 ():110182-110182.

Chicago/Turabian Style

Dasari Naga Vinod; S.R.S. Prabaharan. 2020. "Data science and the role of Artificial Intelligence in achieving the fast diagnosis of Covid-19." Chaos, Solitons & Fractals 140, no. : 110182-110182.

Journal article
Published: 25 November 2019 in Nanoscience & Nanotechnology-Asia
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Ion transport in the solid state has been regarded as imperative with regards to high energy density electrochemical storage devices (for instance, batteries) for efficient electric mobility. Of late, there is another niche application involving ion transport in solid state which manifested itself as nonvolatile memory namely memristor. Such memories are classified under the emerging category of novel solid state Resistive Random Access Memories (RRAM). In 2008, HP labs unveiled the first practical memristor device employing TiO2 and non-stoichiometric titania as bilayer stack structure and on both sides of two titania layers platinum (pt) are used as blocking electrode for ions. It is understood that switching fundamentals are correlated to the filamentary conduction in metal oxide memristors owing to the formation and rupture of the filament-like nano-dendrites, one of the key mechanisms widely accepted in the arena of memristor analysis. This paper critically reviews the fundamental materials being employed in novel memristor memories. It is believed that solid electrolytes (fast ion conductors) are the fundamental building blocks of these memories. We have chosen a few archetypes, solid electrolytes are considered and their impact on the state-of-art research in this domain is discussed in detail. An indepth analysis of the fundamentals of resistive switching mechanism involved in various classes of memristive devices viz., Electrochemical Metallization Memories (ECM) and Valence Change Memories (VCM) is elucidated. A few important applications of memristors such as neuristor and artificial synapse in neuromorphic computing are reviewed as well.

ACS Style

Chandra Sekhar Dash; S.R.S. Prabaharan. Science and Technological Understanding of Nano-ionic Resistive Memories (RRAM). Nanoscience & Nanotechnology-Asia 2019, 9, 444 -461.

AMA Style

Chandra Sekhar Dash, S.R.S. Prabaharan. Science and Technological Understanding of Nano-ionic Resistive Memories (RRAM). Nanoscience & Nanotechnology-Asia. 2019; 9 (4):444-461.

Chicago/Turabian Style

Chandra Sekhar Dash; S.R.S. Prabaharan. 2019. "Science and Technological Understanding of Nano-ionic Resistive Memories (RRAM)." Nanoscience & Nanotechnology-Asia 9, no. 4: 444-461.

Journal article
Published: 28 October 2019 in Journal of the Taiwan Institute of Chemical Engineers
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Hitherto, synthesis of a single-phase Li2MnSiO4 has been perceived to be a challenging task owing to the formation energy possessed by different polymorphs is very close. In this context, we report a facile synthesis protocol by optimizing the synthesis conditions such as gas atmosphere, annealing temperature and time to obtain a phase pure crystalline monoclinic phase of Li2MnSiO4 (m-Li2MnSiO4). During the process, to avoid the formation of mixed phases of Li2MnSiO4, the dried precursor substance is subjected to following heat treatment conditions: (1) dried precursor is heated at ambient atmosphere followed by annealing; (2) maintaining a controlled flow of either O2 gas purging adapting a temperature-programmed reaction (TPR). Analysis of X-ray powder patterns reveal that during the process of heat treatment, the controlled purging of O2 is imperative to achieve battery-active monoclinic Li2MnSiO4. Perhaps the formation of m-Li2MnSiO4 occurs during the decomposition of starting material at ∼ 300 °C itself as evident from TGA/DSC analysis further annealing is essential to improve its crystallinity. The controlled flow of O2 purging results in mono dispersion of nanoparticles (TEM analysis) whereas the conventional method of annealing leads to the agglomeration of nanoparticles. Interestingly, m-Li2MnSiO4 product thus obtained exhibit mesoporosity irrespective of synthesis conditions employed. The superior electrochemical performance observed in m-Li2MnSiO4 prepared via temperature-programmed reaction (TPR) is attributed to its higher surface area, high pore volume and mono dispersion of nanoparticles. The degradation of capacity of m-Li2MnSiO4 when the lower voltage is extended to 2.5 V is owing to the formation Mn2O3.

ACS Style

K. Shree Kesavan; M.S. Michael; S.R.S. Prabaharan. Battery-active monoclinic Li2MnSiO4 synthesized via temperature programmed reaction. Journal of the Taiwan Institute of Chemical Engineers 2019, 105, 28 -38.

AMA Style

K. Shree Kesavan, M.S. Michael, S.R.S. Prabaharan. Battery-active monoclinic Li2MnSiO4 synthesized via temperature programmed reaction. Journal of the Taiwan Institute of Chemical Engineers. 2019; 105 ():28-38.

Chicago/Turabian Style

K. Shree Kesavan; M.S. Michael; S.R.S. Prabaharan. 2019. "Battery-active monoclinic Li2MnSiO4 synthesized via temperature programmed reaction." Journal of the Taiwan Institute of Chemical Engineers 105, no. : 28-38.

Review
Published: 04 June 2019 in Energies
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Wireless cellular networks are emerging to take a strong stand in attempts to achieve pervasive large scale obtainment, communication, and processing with the evolution of the fifth generation (5G) network. Both the present day cellular technologies and the evolving new age 5G are considered to be advantageous for the smart grid. The 5G networks exhibit relevant services for critical and timely applications for greater aspects in the smart grid. In the present day electricity markets, 5G provides new business models to the energy providers and improves the way the utility communicates with the grid systems. In this work, a complete analysis and a review of the 5G network and its vision regarding the smart grid is exhibited. The work discusses the present day wireless technologies, and the architectural changes for the past years are shown. Furthermore, to understand the user-based analyses in a smart grid, a detailed analysis of 5G architecture with the grid perspectives is exhibited. The current status of 5G networks in a smart grid with a different analysis for energy efficiency is vividly explained in this work. Furthermore, focus is emphasized on future reliable smart grid communication with future roadmaps and challenges to be faced. The complete work gives an in-depth understanding of 5G networks as they pertain to future smart grids as a comprehensive analysis.

ACS Style

Sofana Reka. S; Tomislav Dragičević; Pierluigi Siano; S.R. Sahaya Prabaharan. Future Generation 5G Wireless Networks for Smart Grid: A Comprehensive Review. Energies 2019, 12, 2140 .

AMA Style

Sofana Reka. S, Tomislav Dragičević, Pierluigi Siano, S.R. Sahaya Prabaharan. Future Generation 5G Wireless Networks for Smart Grid: A Comprehensive Review. Energies. 2019; 12 (11):2140.

Chicago/Turabian Style

Sofana Reka. S; Tomislav Dragičević; Pierluigi Siano; S.R. Sahaya Prabaharan. 2019. "Future Generation 5G Wireless Networks for Smart Grid: A Comprehensive Review." Energies 12, no. 11: 2140.

Journal article
Published: 01 January 2019 in REVIEWS ON ADVANCED MATERIALS SCIENCE
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Use of solid state ionic conductors the so-called Solid Electrolytes has brought new impetus to the field of solid state memories namely resistive random access memory (Re-RAM). In this review article, to begin we present the detailed understanding on the basics of solid electrolytes. Later, the same has been reviewed focusing on its application in novel solid state memory applications. Few examples of solid electrolytes are considered and their impact on the state-of-art research in this domain is discussed in detail. An in-depth analysis on the fundamentals of Resistive switching mechanism involved in various classes of Memristive devices viz., Electrochemical Metallization Memories (ECM) and Valence change Memories (VCM). A few important applications of Memristors such as Neuristor and artificial synapse in neuromorphic computing are reviewed as well. Finally, the most anticipated energy efficient battery-like cells as artificial synapse in brain-inspired computing is also covered.

ACS Style

Chandra Sekhar Dash; S. R. S. Prabaharan. Nano Resistive Memory (Re-RAM) Devices and their Applications. REVIEWS ON ADVANCED MATERIALS SCIENCE 2019, 58, 248 -270.

AMA Style

Chandra Sekhar Dash, S. R. S. Prabaharan. Nano Resistive Memory (Re-RAM) Devices and their Applications. REVIEWS ON ADVANCED MATERIALS SCIENCE. 2019; 58 (1):248-270.

Chicago/Turabian Style

Chandra Sekhar Dash; S. R. S. Prabaharan. 2019. "Nano Resistive Memory (Re-RAM) Devices and their Applications." REVIEWS ON ADVANCED MATERIALS SCIENCE 58, no. 1: 248-270.

Journal article
Published: 25 July 2018 in AEU - International Journal of Electronics and Communications
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The non-deterministic nature of memristor and its unreliable behavior are the two major concerns hampering its growth and industrial manufacturability. The endurance and reliability of memristor memories are affected not only by the process variations (intrinsic), but also due to the electrical stress created by interfacing peripheral circuits (extrinsic). Concerning the intrinsic faults in transition metal oxide (TMO) memristors, drifting of oxygen vacancies across the device is responsible for SET/RESET operation. It is likely that such drifting might induce switching faults during the device operation, for instance endurance of the memory. Thus, the application of a fixed write pulse may not suffice to achieve successful write operations under these circumstances. To circumvent the above pitfall, we propose here a new technique by designing a fault tolerant adaptable write scheme which can adapt by itself based on the behavior and switching faults. Accordingly, the proposed write scheme identifies the optimal amplitude and the width for write pulse. The proposed write scheme under various memristor faults is found to enhancing the reliability of memristors efficiently. Further, the results are validated by means of Monte-Carlo analysis by infusing the random variations of internal parameters of memristors as well.

ACS Style

V. Ravi; S.R.S. Prabaharan. Fault tolerant adaptive write schemes for improving endurance and reliability of memristor memories. AEU - International Journal of Electronics and Communications 2018, 94, 392 -406.

AMA Style

V. Ravi, S.R.S. Prabaharan. Fault tolerant adaptive write schemes for improving endurance and reliability of memristor memories. AEU - International Journal of Electronics and Communications. 2018; 94 ():392-406.

Chicago/Turabian Style

V. Ravi; S.R.S. Prabaharan. 2018. "Fault tolerant adaptive write schemes for improving endurance and reliability of memristor memories." AEU - International Journal of Electronics and Communications 94, no. : 392-406.

Journal article
Published: 19 July 2018 in Solid State Ionics
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Employing electrochemical impedance spectroscopy (EIS), we demonstrate a novel approach towards characterizing the switching behavior of nano-ionic memristor, M/TiO2−x/TiO2/M where M = Au, fabricated using combined RF/DC magnetron sputtering techniques. The non-linear resistive switching behavior of the device has been investigated using a constant potential sweep technique to observe I-V switching profile (a pinched hysteresis loop) in which ex-situ impedance response has been measured by interrupting the potential sweep (mV s−1) over different distinct regimes (pristine device, SET and after zero-crossing). Accordingly, the obtained EIS spectra are corroborated with oxide circuit model and the corresponding numerical fittings of the impedance response reveals distinct RC frequency domains as exemplified in the equivalent circuit models obtained using the simulated impedance response and attributed to the interfacial barrier between the stoichiometric and non-stoichiometric TiO2 respectively. It is evident that the device shows various functional features as memory element owing to the transport of mobile charges in TiO2−x when the bias potential (V) is applied across the device. It is revealed that EIS studies render a new insight into much acclaimed formation and annihilation of nanofilament like dendrites (magneli phase of titania, TinO2n−1) which are found to be responsible for the change of switching states between low resistance state (LRS) and high resistance state (HRS) respectively. In order to validate the memory retention and endurance characteristics, the reproducible resistive switching is found to occur consistently over 104 s and the device endurance has been verified by toggling between HRS and LRS over 1000 cycles.

ACS Style

Chandra Sekhar Dash; Satyajeet Sahoo; S.R.S. Prabaharan. Resistive switching and impedance characteristics of M/TiO2−x/TiO2/M nano-ionic memristor. Solid State Ionics 2018, 324, 218 -225.

AMA Style

Chandra Sekhar Dash, Satyajeet Sahoo, S.R.S. Prabaharan. Resistive switching and impedance characteristics of M/TiO2−x/TiO2/M nano-ionic memristor. Solid State Ionics. 2018; 324 ():218-225.

Chicago/Turabian Style

Chandra Sekhar Dash; Satyajeet Sahoo; S.R.S. Prabaharan. 2018. "Resistive switching and impedance characteristics of M/TiO2−x/TiO2/M nano-ionic memristor." Solid State Ionics 324, no. : 218-225.

Journal article
Published: 01 July 2018 in AEU - International Journal of Electronics and Communications
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ACS Style

S. Muthulakshmi; Chandra Sekhar Dash; S.R.S. Prabaharan. Memristor augmented approximate adders and subtractors for image processing applications: An approach. AEU - International Journal of Electronics and Communications 2018, 91, 91 -102.

AMA Style

S. Muthulakshmi, Chandra Sekhar Dash, S.R.S. Prabaharan. Memristor augmented approximate adders and subtractors for image processing applications: An approach. AEU - International Journal of Electronics and Communications. 2018; 91 ():91-102.

Chicago/Turabian Style

S. Muthulakshmi; Chandra Sekhar Dash; S.R.S. Prabaharan. 2018. "Memristor augmented approximate adders and subtractors for image processing applications: An approach." AEU - International Journal of Electronics and Communications 91, no. : 91-102.

Journal article
Published: 01 June 2018 in AEU - International Journal of Electronics and Communications
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The memristor is a nano-scaled resistive switching device which is widely used in analog and digital applications. We report here our success in formulating a new window function as applicable to linear ion drift model. Accordingly, this paper identifies the demerits of other existing window functions and the requirement of a versatile window function to mimic the current-voltage characteristics of a physical memristor device. The proposed new window function overcomes the demerits of existing window functions such as boundary effect, boundary lock (with respect to frequency of operation), and the scalability. The main significance of proposed model is to facilitate the nonlinearity in linear ion drift memristor model that produces the pinched hysteresis loop (a signature of a memristor) for any typical applied voltage within the frequency range (0.05≤f<2 Hz). The validation of which has been verified in a memristor based op-amp circuitry. It exhibits a high gain compared to other existing models and produces low power dissipation compared to CMOS based op-amp.

ACS Style

T.A. Anusudha; S.R.S. Prabaharan. A versatile window function for linear ion drift memristor model – A new approach. AEU - International Journal of Electronics and Communications 2018, 90, 130 -139.

AMA Style

T.A. Anusudha, S.R.S. Prabaharan. A versatile window function for linear ion drift memristor model – A new approach. AEU - International Journal of Electronics and Communications. 2018; 90 ():130-139.

Chicago/Turabian Style

T.A. Anusudha; S.R.S. Prabaharan. 2018. "A versatile window function for linear ion drift memristor model – A new approach." AEU - International Journal of Electronics and Communications 90, no. : 130-139.

Journal article
Published: 07 March 2017 in Far East Journal of Electronics and Communications
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ACS Style

V. Ravi; S. R. S. Prabaharan. MEMRISTOR BASED MEMORIES: DEFECTS, TESTING, AND TESTABILITY TECHNIQUES. Far East Journal of Electronics and Communications 2017, 17, 105 -125.

AMA Style

V. Ravi, S. R. S. Prabaharan. MEMRISTOR BASED MEMORIES: DEFECTS, TESTING, AND TESTABILITY TECHNIQUES. Far East Journal of Electronics and Communications. 2017; 17 (1):105-125.

Chicago/Turabian Style

V. Ravi; S. R. S. Prabaharan. 2017. "MEMRISTOR BASED MEMORIES: DEFECTS, TESTING, AND TESTABILITY TECHNIQUES." Far East Journal of Electronics and Communications 17, no. 1: 105-125.