Optical metrology is one of the key technologies in today’s manufacturing industry. In this article, we provide an insight into optical measurement technologies for precision positioning and quality assessment in today’s manufacturing industry. First, some optical measurement technologies for precision positioning are explained, mainly focusing on those with a multi-axis positioning system composed of linear slides, often employed in machine tools or measuring instruments. Some optical measurement technologies for the quality assessment of products are then reviewed, focusing on technologies for form measurement of products with a large metric structure, from a telescope mirror to a nanometric structure such as a semiconductor electrode. Furthermore, we also review the state-of-the-art optical technique that has attracted attention in recent years, optical coherence tomography for the non-destructive inspection of the internal structures of a fabricated component, as well as super-resolution techniques for improving the lateral resolution of optical imaging beyond the diffraction limit of light. This review article provides insights into current and future technologies for optical measurement in the manufacturing industry, which are expected to become even more important to meet the industry’s continuing requirements for high-precision and high-efficiency machining.

The excitonic effect and JDOS dominated evolution in layer-dependent dielectric and optical properties of 2D WSe ₂ were investigated by spectroscopic ellipsometry.

In order to achieve effective process control, fast, inexpensive, nondestructive and reliable nanometer scale feature measurements are extremely useful in high-volume nanomanufacturing. Among the possible techniques, optical scatterometry is relatively ideal due to its high throughput, low cost, and minimal sample damage. However, this technique is inherently limited by the illumination spot size of the instrument and the low efficiency in construction of a map of the sample over a wide area. Aiming at these issues, we introduce conventional imaging techniques to optical scatterometry and combine them with Mueller matrix ellipsometry based scatterometry, which is expected to be a powerful tool for the measurement of nanostructures in future high-volume nanomanufacturing, and propose to apply Mueller matrix imaging ellipsometry (MMIE) for nanostructure metrology. Two kinds of nanostructures were measured using an in-house developed Mueller matrix imaging ellipsometer in this work. The experimental results demonstrate that we can achieve Mueller matrix measurement and analysis for nanostructures with pixel-sized illumination spots by using MMIE. We can also efficiently construct parameter maps of the nanostructures over a wide area with pixel-sized lateral resolution by performing parallel ellipsometric analysis for all the pixels of interest.

Accurate measurement of the Mueller matrix over a broad band is highly desirable for the characterization of nanostructures and nanomaterials. In this paper, we propose a general composite waveplate (GCW) that consists of multiple waveplates with flexibly oriented axes as a polarization modulating component in the Mueller matrix ellipsometer (MME). Although it is a common practice to make achromatic retarders by combining multiple waveplates, the novelty of the GCW is that both the retardances and azimuths of fast axes of the single-waveplates in the GCW are flexible parameters to be optimized, which is different from the conventional design where single-waveplates are usually arranged in symmetrical layout or with their fast axes parallel or perpendicular to each other. Consequently, the GCW can provide many more flexibilities to adapt to the optimization of the MME over a broad band. A quartz triplate, as a concrete example of the GCW, is designed and used in a house-made MME. The experimental results on the air demonstrate that the house-made MME using the optimally designed quartz triplates has an accuracy better than 0.2% and a precision better than 0.1% in the Mueller matrix measurement over a broad spectral range of 200∼1000 nm. The house-made MME exhibits high measurement repeatability better than 0.004 nm in testing a series of standard SiO ₂ /Si samples with nominal oxide layer thicknesses ranging from 2 nm to 1000 nm.