Finding the source of their durability: Many high-strength materials can fail after repeated exposure to subcritical loading; therefore, understanding the causes of fatigue is key to extending the longevity of the material in use. Bai et al. used chemical vapor deposition to produce centimeter-long carbon nanotubes. They then decorated these nanotubes with titanium dioxide nanoparticles for optical visualization and studied them using noncontact acoustic resonance tests. The authors determined that fatigue lifetime is dependent on the formation of the first defects on straining and is higher at lower temperatures. Science , this issue p. 1104

Efficient waste heat dissipation has become increasingly challenging as transistor size has decreased to nanometers. As governed by universal Umklapp phonon scattering, the thermal conductivity of semiconductors decreases at higher temperatures and causes heat transfer deterioration under high-power conditions. In this study, we realized simultaneous electrical and thermal rectification (TR) in a monolayer MoSe ₂ -WSe ₂ lateral heterostructure. The atomically thin MoSe ₂ -WSe ₂ heterojunction forms an electrical diode with a high ON/OFF ratio up to 10 ⁴ . Meanwhile, a preferred heat dissipation channel was formed from MoSe ₂ to WSe ₂ in the ON state of the heterojunction diode at high bias voltage with a TR factor as high as 96%. Higher thermal conductivity was achieved at higher temperatures owing to the TR effect caused by the local temperature gradient. Furthermore, the TR factor could be regulated from maximum to zero by rotating the angle of the monolayer heterojunction interface. This result opens a path for designing novel nanoelectronic devices with enhanced thermal dissipation.

Wide-bandgap gallium nitride (GaN)-based semiconductors offer significant advantages over traditional Si-based semiconductors in terms of high-power and high-frequency operations. As it has superior properties, such as high operating temperatures, high-frequency operation, high breakdown electric field, and enhanced radiation resistance, GaN is applied in various fields, such as power electronic devices, renewable energy systems, light-emitting diodes, and radio frequency (RF) electronic devices. For example, GaN-based high-electron-mobility transistors (HEMTs) are used widely in various applications, such as 5G cellular networks, satellite communication, and radar systems. When a current flows through the transistor channels during operation, the self-heating effect (SHE) deriving from joule heat generation causes a significant increase in the temperature. Increases in the channel temperature reduce the carrier mobility and cause a shift in the threshold voltage, resulting in significant performance degradation. Moreover, temperature increases cause substantial lifetime reductions. Accordingly, GaN-based HEMTs are operated at a low power, although they have demonstrated high RF output power potential. The SHE is expected to be even more important in future advanced technology designs, such as gate-all-around field-effect transistor (GAAFET) and three-dimensional (3D) IC architectures. Materials with high thermal conductivities, such as silicon carbide (SiC) and diamond, are good candidates as substrates for heat dissipation in GaN-based semiconductors. However, the thermal boundary resistance (TBR) of the GaN/substrate interface is a bottleneck for heat dissipation. This bottleneck should be reduced optimally to enable full employment of the high thermal conductivity of the substrates. Here, we comprehensively review the experimental and simulation studies that report TBRs in GaN-on-SiC and GaN-on-diamond devices. The effects of the growth methods, growth conditions, integration methods, and interlayer structures on the TBR are summarized. This study provides guidelines for decreasing the TBR for thermal management in the design and implementation of GaN-based semiconductor devices.

The concept of thermal rectification was put forward decades ago. It is a phenomenon in which the heat flux along one direction varies as the sign of temperature gradient changes. In bulk materials, thermal rectification has been realized at contact interfaces by manufacturing asymmetric effective contact areas, electron transport, temperature dependence of thermal conductivity and so on. The mechanism of thermal rectification has been studied intensively by using both experimental and theoretical methods. In recent years, with the rapid development of nanoscience and technology, the active control and management of heat transport at the nanoscale has become an important task and has attracted much attention. As the most fundamental component, the development and utilization of a nanothermal rectifier is the key technology. Although many research papers have been published in this field, due to the significant challenge in manufacturing asymmetric nanostructures, most of the publications are focused on molecular dynamics simulation and theoretical analysis. Great effort is urgently required in the experimental realization of thermal rectification at the nanoscale, laying a solid foundation for computation and theoretical modeling. The aim of this brief review is to introduce the most recent experimental advances in thermal rectification at the nanoscale and discuss the physical mechanisms. The new nanotechnology and method can be used to improve our ability to further design and produce efficient thermal devices with a high rectification ratio.