The aim of the paper was to apply the newly developed instruments ‘Corescan’ and ‘Sherescan’ in order to measure the essential parameters of producing solar cells in comparison with the standard techniques. The standard technique named the Transmission Line Method (TLM) is one way to monitor contacting process to measure contact resistance locally between the substrate and metallization. Nowadays, contact resistance is measured over the whole photovoltaic cell using Corescanner instrument. The Sherescan device in comparison with standard devices gives a possibility to measure the sheet resistance of the emitter of silicon wafers and determine of both P/N recognition and metal resistance. The Screen Printing (SP) method is the most widely used contact formation technique for commercial silicon solar cells. The contact resistance of manufactured front metallization depends of both the paste composition and co-firing conditions. Screen printed front side metallization and next to co-fired in the infrared conveyor furnace was carried out at various temperature from 770°C to 920°C. The silver paste used in the present paper is commercial. The investigations were carried out on monocrystalline silicon wafers. The topography of co-fired in the infrared belt furnace front metallization was investigated using the atomic force microscope and scanning electron microscope (SEM). There were researched also cross sections of front contacts using SEM microscope. Front contacts of the solar cells were formed on non-textured silicon surface with coated antireflection layer. On one hand, based on electrical properties investigations using Sherescan instrument it was obtained the knowledge of the emitter sheet resistance across the surface of a wafer, what is essential in optimizing the emitter diffusion process. On the other hand, it was found using Corescan instrument that the higher temperature apparently results in a strongly decreased contact resistance.

This work presents comparison results of the selected electrical parameters of silicon solar cells manufactured with silver front electrodes which were co-fired in an infrared belt furnace in the temperature range of 840–960 °C. The commercial paste (PV19B) was used for the metallization process. Electrical properties of a batch of solar cells fabricated in one cycle were investigated. Three methods were used, including measurement of the current-voltage characteristics (I-V), measurement of contacts’ resistivity using the transmission Line model method (TLM), and measurement of contacts’ resistivity using the potential difference method (PD). This work is focused on both the different metallization temperatures of co-firing of solar cells and measurements using the above-mentioned methods. It is shown that the solar cell parameters measured with three methods have different, but strongly correlated values. Moreover, the comparative analysis was performed of the investigations of the same photovoltaic solar cells using both the TLM method and independent research stands (including one non-commercial and two commercial ones) at three different scientific units. In the PD and TLM methods, the same calculation formulae are used. It can be stated, comparing methods I-V, PD, and TLM, that for each, different parameters are determined to assess the electrical properties of the solar cell.

This study aimed to investigate the influence of bimodal TiO₂/nanoTiO₂ coatings obtained in the PVD/ALD hybrid process on an Al-Si-Cu-type aluminium alloy on the physicochemical properties of the investigated materials. The reference materials were uncoated substrates and samples coated with TiO₂ coatings in single PVD and ALD processes. Tests were carried out on the morphology of coatings using scanning electron microscopy (SEM) and atomic force microscopy (AFM) to determine the structure of the tested coatings and their influence on physicochemical properties. The tests of physicochemical properties were carried out using the potentiodynamic and electrochemical impedance spectroscopy methods. The analysis of corrosion products obtained during the study of physicochemical properties was performed using SEM and EDS analysis. Based on the analysis of anode polarisation curves of the tested materials and Tafel analysis, it was found that a sample demonstrated the highest corrosion resistance with a bimodal coating-type TiO₂/nanoTiO₂, which had the lowest value of corrosion current and the highest value of polarisation resistance. The slightest corrosion resistance was characteristic for uncovered samples. Moreover, the influence of the tested coatings on the improvement of tribological contact of the surfaces of the coated materials with the counter-specimen made of cemented carbides was demonstrated.

Indium tin oxide (ITO) layers of various thicknesses were deposited on silicon substrate using magnetron sputtering technique. The use of the layers is dedicated to solar cells produced on the basis of heterostructures at low range of temperatures up to 300 °C. The structure, surface composition and both, optical and electrical properties of the layers were investigated. Optical parameters were characterized by spectrophotometry and ellipsometry, atomic force microscopy (AFM), scanning electron microscopy (SEM) and four-pointed probe as well as X-ray diffraction (XRD). In order to measure the resistivity of the connection zone between electrode and deposit layer transmission line method (TLM) was used. The connection zone between electrode and ITO layer were manufactured in the temperature range of 150-250 °C. Electrodes were formed from silver conductive paste. The use of ITO layer allows optimization of optical parameters in relation to electrical properties of the layer and enables creation of contacts with low resistivity values in low-temperature metallization processes.

This paper presents results from the production of copper oxide layers on a Cu sheet substrate using diode and Yb:YAG disc lasers operating in the wavelength ranges of 808–940 nm and 1030 nm. The parameters of these layers were compared with the layer obtained in the thermal process of copper oxidation at 300 °C in an infrared (IR) furnace in a natural atmosphere. Investigations into the layers mentioned above, concerning their topography, chemical composition and roughness, were made using scanning electron microscopy (SEM) and atomic force microscopy (AFM). A hot-point probe was used to determine and check the type of conductivity of the copper oxide layers formed. The optical band gap energy was estimated by applying the Kubelka–Munk method based on spectrophotometric data. Cross-sections and the element distribution maps were made using transmission electron microscopy (TEM). The phase analysis was investigated by the X-ray diffraction method (XRD). In sum, controlled laser oxidations of copper sheets allow for the formation of a mixture of Cu₂O and CuO phases. The diode laser allows the production of a layer of copper oxides with a phase composition comparable to the oxides produced by the thermal oxidation method, while the distribution of high phase uniformity in the cross-section of the layer enables the process using a Yb:YAG disc laser.