In this work, we present the results of defects analysis concerning ZnO and Al₂O₃ layers deposited by atomic layer deposition (ALD) technique. The analysis was performed by the X-band electron paramagnetic resonance (EPR) spectroscopy, transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) methods. The layers were either tested as-deposited or after 30 min heating at 300 °C and 450 °C in Ar atmosphere. TEM and XPS investigations revealed amorphous nature and non-stoichiometry of aluminum oxide even after additional high-temperature treatment. EPR confirmed high number of defect states in Al₂O₃. For ZnO, we found the as-deposited layer shows ultrafine grains that start to grow when high temperature is applied and that their crystallinity is also improved, resulting in good agreement with XPS results which indicated lower number of defects on the layer surface.

This work presents comparison results of the selected electrical parameters of silicon solar cells manufactured with silver front electrodes which were co-fired in an infrared belt furnace in the temperature range of 840–960 °C. The commercial paste (PV19B) was used for the metallization process. Electrical properties of a batch of solar cells fabricated in one cycle were investigated. Three methods were used, including measurement of the current-voltage characteristics (I-V), measurement of contacts’ resistivity using the transmission Line model method (TLM), and measurement of contacts’ resistivity using the potential difference method (PD). This work is focused on both the different metallization temperatures of co-firing of solar cells and measurements using the above-mentioned methods. It is shown that the solar cell parameters measured with three methods have different, but strongly correlated values. Moreover, the comparative analysis was performed of the investigations of the same photovoltaic solar cells using both the TLM method and independent research stands (including one non-commercial and two commercial ones) at three different scientific units. In the PD and TLM methods, the same calculation formulae are used. It can be stated, comparing methods I-V, PD, and TLM, that for each, different parameters are determined to assess the electrical properties of the solar cell.

This paper presents results from the production of copper oxide layers on a Cu sheet substrate using diode and Yb:YAG disc lasers operating in the wavelength ranges of 808–940 nm and 1030 nm. The parameters of these layers were compared with the layer obtained in the thermal process of copper oxidation at 300 °C in an infrared (IR) furnace in a natural atmosphere. Investigations into the layers mentioned above, concerning their topography, chemical composition and roughness, were made using scanning electron microscopy (SEM) and atomic force microscopy (AFM). A hot-point probe was used to determine and check the type of conductivity of the copper oxide layers formed. The optical band gap energy was estimated by applying the Kubelka–Munk method based on spectrophotometric data. Cross-sections and the element distribution maps were made using transmission electron microscopy (TEM). The phase analysis was investigated by the X-ray diffraction method (XRD). In sum, controlled laser oxidations of copper sheets allow for the formation of a mixture of Cu₂O and CuO phases. The diode laser allows the production of a layer of copper oxides with a phase composition comparable to the oxides produced by the thermal oxidation method, while the distribution of high phase uniformity in the cross-section of the layer enables the process using a Yb:YAG disc laser.

The paper presents the results concerning the influence of the thickness of the ITO and In₂O₃ layers deposited by the magnetron sputtering method on the physical parameters characterising their surface properties. The characterisation parameters were obtained by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and Kelvin probe. The increase in the layers’ thickness related to the time of their fabrication causes an increase in the surface roughness and the value of the work function, followed by a decrease in the concentration of elements and compounds in the near-surface area.

In this report, the morphological, optical, electrical, and photovoltaic properties of copper oxide and calcium-doped copper oxide thin films produced via the spray coating method were studied. The thermal post treatment at 300 °C in an inert atmosphere allowed us to obtain a single phase of Cu₂O with 21 Ωcm of resistivity (ρ). In this study, 1 wt%, 2 wt%, 3 wt%, 4 wt%, 5 wt%, and 10 wt% Ca admixtures with copper oxide were investigated. The determined optimal calcium dopant concentration was 4 wt%. XRD analysis was used to reveal the chemical composition of the produced layers. It was found that a calcium dopant does not change the layer composition but improves its electrical parameters. Based on UV-Vis spectra, the band gap energy and Urbach energy were calculated. The morphology of produced thin films was described as smooth and nanocrystalline, corresponding to a grain size calculated based on the Scherrer equation. Finally, it was shown that the developed protocol of low-resistivity copper oxide deposition via the spray coating technique can be successfully implemented in heterojunction solar cell production. The I–V parameters of Ag/n-type CzSi/REF:CuO_x and 4Ca:CuO_x/Carbon were collected, and the achieved efficiency was 2.38%.

In this work, we report on the fabrication of ZnO thin films doped with Ge via the ALD method. With an optimized amount of Ge doping, there was an improvement in the conductivity of the films owing to an increase in the carrier concentration. The optical properties of the films doped with Ge show improved transmittance and reduced reflectance, making them more attractive for opto-electronic applications. The band gap of the films exhibits a blue shift with Ge doping due to the Burstein–Moss effect. The variations in the band gap and the work function of ZnO depend strongly on the carrier density of the films. From the surface studies carried out using XPS, we could confirm that Ge replaces some of the Zn in the wurtzite structure. In the films containing Ge, the concentration of oxygen vacancies is also high, which is somehow related to the poor electrical properties of the films at higher Ge concentrations.