The highest power conversion efficiency (PCE) for organic-inorganic perovskite solar cells based on lead is reported as 25.2% in 2019. Lead-based hybrid perovskite materials are used in several photovoltaics applications, but these are not highly favored due to the toxicity of lead and volatility of organic cations. On the other hand, hybrid lead-free double perovskite has no such harm. In this research study, SCAPS numerical simulation is utilized to evaluate and compare the results of perovskite solar cell based on double perovskite and standard perovskite as an active layer. The results show that the power conversion efficiency obtained in the case of is 24.98%, while in the case of , it is reported as 26.42%. This indicates that the hybrid organic-inorganic double perovskite has the ability to replace hybrid organic-inorganic perovskite to expand next-generation lead-free harmless materials for solar cell applications.

This review provides a comprehensive overview of recent advancements in the synthesis, properties, and applications of organic materials in the optoelectronics sector. The study emphasizes the critical role of organic materials in the development of state-of-the-art optoelectronic devices such as organic solar cells, organic thin-film transistors, and OLEDs. The review further examines the structure, operational principles, and performance metrics of organic optoelectronic devices. Organic materials have emerged as promising candidates due to their low-cost production and potential for large-area or flexible substrate applications. Additionally, this review highlights the physical mechanisms governing the optoelectronic properties of high-performance organic materials, particularly photoinduced processes relevant to charge carrier photogeneration. It discusses the unique benefits of organic materials over traditional inorganic materials, including their light weight, simple processing, and flexibility. The report delves into the challenges related to stability, scalability, and performance, while highlighting the wide range of electronic properties exhibited by organic materials, which are critical for their performances in optoelectronic devices. Furthermore, it addresses the need for further research and development in this field to achieve consistent performance across different types of devices.

Thin films of zinc oxide (ZnO) doped with transition metals have recently gained significant attention due to their potential applications in a wide range of optoelectronic devices. This study focuses on ZnO thin films doped with the transition metals Co, Fe, and Zr, exploring various aspects of their structural, morphological, optical, electrical, and photoluminescence properties. The thin films were produced using RF and DC co-sputtering techniques. The X-ray diffraction (XRD) analysis revealed that all the doped ZnO thin films exhibited a stable wurtzite crystal structure, showcasing a higher structural stability compared to the undoped ZnO, while the atomic force microscopy (AFM) imaging highlighted a distinctive granular arrangement. Energy-dispersive X-ray spectroscopy was employed to confirm the presence of transition metals in the thin films, and Fourier-transform infrared spectroscopy (FTIR) was utilized to investigate the presence of chemical bonding. The optical characterizations indicated that doping induced changes in the optical properties of the thin films. Specifically, the doped ZnO thin film’s bandgap experienced a significant reduction, decreasing from 3.34 to 3.30 eV. The photoluminescence (PL) analysis revealed distinguishable emission peaks within the optical spectrum, attributed to electronic transitions occurring between different bands or between a band and an impurity. Furthermore, the introduction of these transition metals resulted in decreased resistivity and increased conductivity, indicating their positive influence on the electrical conductivity of the thin films. This suggests potential applications in solar cells and light-emitting devices.

This work focuses on preparing TiO₂, CdS, and composite TiO₂:CdS thin films for photovoltaic applications by thermal evaporation. The suggested materials exhibit very good optical and electrical properties and can play a significant role in enhancing the efficiency of the device. Various microscopy and spectroscopy techniques were considered to investigate the optical, morphological, photoluminescence, and electrical properties. FTIR confirms the material identification by displaying some peaks in the fingerprint region. UV Vis spectroscopy yields high transmission (80–90%) and low absorbance (5–10%) within the spectral region from 500 nm to 800 nm for the composite thin films. The optical band gap values for CdS, TiO_2, and TiO₂:CdS thin films are 2.42 eV, 3.72 eV, and 3.6 eV. XRD was utilized to analyze the amorphous nature of the thin films, while optical and SEM microscopy were employed to examine the morphological changes caused by the addition of CdS to TiO₂. The decrease in the bandgap of the composite thin films was determined by the Tauc plot, which is endorsed due to the band tailing effects. Photoluminescence spectroscopy depicts several emission peaks in the visible region when they are excited at different wavelengths, and the electrical measurement enhances the material conductivity. Furthermore, the proposed electron transport materials (TiO₂, CdS, TiO₂:CdS) were simulated with different perovskite materials to validate their design by employing the SCAPS-1D program and assess their performance in commercial implementation. The observed results suggest that TiO₂:CdS is a promising candidate to be used as an ETM in PSC with enhanced productivity.

This work is aimed at investigating the viability of utilizing cadmium sulfide (CdS) as a buffer layer in CdTe solar cells by analyzing and assessing its optical, photoluminescence, morphological, and electrical properties. These films were fabricated using a thermal coating technique. Optical microscopy was used to observe the changes in morphology resulting from the doping of rare-earth metals such as samarium (Sm) and lanthanum (La) to CdS, while the granular-like structure of the sample was confirmed by scanning electron microscopy. The objective of incorporating Sm and La ions into CdS was to enhance photoconductivity and optimize the optical bandgap, aiming to create a viable charge transport material for photovoltaic devices with enhanced efficiency. Through that process, a noticeable decrease in transmission, from approximately 80 to 68% in the visible region, was observed. Additionally, the bandgap value was reduced from 2.43 to 2.27 eV. Furthermore, during the analysis of the photoluminescence spectra, it was observed that emission peaks occurred in the visible region. These emissions were attributed to electronic transitions that took place via band-to-band and band-to-impurity interactions. The electrical measurements showed an enhancement in conductivity due to the decrease in the bandgap. This notable consequence of the doped materials suggests their utilization in photovoltaic systems.

Aluminum nitride (AlN) is a semiconductor material possessing a hexagonal wurtzite crystal structure with a large band gap of 6.2 eV. AlN thin films have several potential applications and areas for study, particularly in optoelectronics. This research study focused on the preparation of Ni-doped AlN thin films by using DC and RF magnetron sputtering for optoelectronic applications. Additionally, a comparative analysis was also carried out on the as-deposited and annealed thin films. Several spectroscopy and microscopy techniques were considered for the characterization of structural (X-ray diffraction), morphological (SEM), chemical bonding (FTIR), and emission (PL spectroscopy) properties. The XRD results show that the thin films have an oriented c-axis hexagonal structure. SEM analysis validated the granular-like morphology of the deposited sample, and FTIR results confirm the presence of chemical bonding in deposited thin films. The photoluminescence (PL) emission spectra exhibit different peaks in the visible region when excited at different wavelengths. A sharp and intense photoluminescence peak was observed at 426 nm in the violet-blue region, which can be attributed to inter-band transitions due to the incorporation of Ni in AlN. Most of the peaks in the PL spectra occurred due to direct-band recombination and indirect impurity-band recombination. After annealing, the intensity of all observed peaks increases drastically due to the development of new phases, resulting in a decrease in defects and a corresponding increase in the crystallinity of the thin film. The observed structural, morphological, and photoluminescence results suggest that Ni: AlN is a promising candidate to be used in optoelectronics applications, specifically in photovoltaic devices and lasers.