We obtained zinc oxide films doped with aluminum using atomic layer deposition (ALD). Their morphology, growth mode, optical and electrical properties are studied. Al content dependence is analyzed. Carrier scattering mechanisms in ZnO:Al (AZO) films are investigated from conductivity versus temperature measurements. We also discuss how the film thickness affects its resistivity and optical transmission. The obtained film resistivities, i.e. 7 × 10⁻⁴ Ωcm, belong to the lowest reported so far for transparent ZnO:Al films grown by the ALD method.

Anatase phase formation in TiO₂ films obtained by atomic layer deposition (ALD) is investigated. At growth temperature close to 200 °C, the anatase phase of TiO₂ originates from crystalline seeds formed in an amorphous layer. These seeds, formed in the initial stages of a film growth, allow an expansion of the anatase phase in the amorphous parts and their transformation. This expansion occurs either during a further growth process or during a post-deposition annealing at relatively low temperatures (160–220 °C). The process of a lateral expansion of the anatase phase within the amorphous one was found to be thermally activated with an activation energy of 1.5 eV.

Three lead chalcogenide films, PbTe, PbSe, and PbS, with a high structural quality were grown by pulsed lased deposition (PLD). The films were grown on single crystal substrates (Si, KCl, Al₂O₃) and on Si covered with a Si₃N₄ buffer layer. The Si₃N₄ layer latter facilitated the lead chalcogenide layer nucleation during the first growth stages and resulted in a more homogeneous surface morphology and a lower surface roughness. The surface geometry (roughness) of the films grown on Si₃N₄ was studied by means of the power spectral density analysis. Different growth modes, ranging from plasma plume condensation to bulk diffusion, resulting in observed film morphologies were identified. The investigations were complemented by electrical characterization of the chalcogenide films.

Niobium-doped titanium dioxide (Ti_1−x Nb _x O₂, x ≈ 0.04, TNO) films were grown by atomic layer deposition (ALD) at a low growth temperature (220 °C) on LaAlO₃(1 0 0) (LAO) and Al₂O₃(0 0 0 1) (c-sapphire) substrates. The films were without any post-deposition annealing. The films grown on both kinds of substrates have anatase structure. However, the films grown on LAO substrates have (0 0 1) predominant orientation compared to a higher content of (1 1 2) orientation in the films grown on sapphire. TNO/LAO films showed low resistivities (~10⁻³ Ω cm at room temperature) and a metallic-type electrical conductivity as opposed to higher resistivities (~10⁻² Ω cm) and a thermally activated conductivity of TNO/sapphire layers. ALD growth mechanisms of TNO films on crystalline substrates were described.