The structural, optical, and electrical properties of zinc oxide (ZnO) layers manufactured at different process conditions were investigated. ZnO epitaxial layers were grown on silicon, glass, and ITO/glass substrates by pulsed laser deposition (PLD) technique. The influence of power beam, substrate temperature, and deposition time on films properties was analysed. Morphological features of the film surface were investigated by scanning electron microscopy. A structural study shown planar orientation of films at low temperatures of substrate, but the columnar type of growth originated in temperature enhances. Electrical properties were determined in the temperature range 300–500 K. It was shown that the type of films conductivity is metallic and it is limited by charge transfer across grain boundaries.

We obtained zinc oxide films doped with aluminum using atomic layer deposition (ALD). Their morphology, growth mode, optical and electrical properties are studied. Al content dependence is analyzed. Carrier scattering mechanisms in ZnO:Al (AZO) films are investigated from conductivity versus temperature measurements. We also discuss how the film thickness affects its resistivity and optical transmission. The obtained film resistivities, i.e. 7 × 10⁻⁴ Ωcm, belong to the lowest reported so far for transparent ZnO:Al films grown by the ALD method.

Transparent thin layers of cobalt-doped ZnO were produced with the pulsed laser deposition method. The cobalt content of the original solid solution was 20% at. The crystallographic structure was examined by X-ray diffraction, which showed that the fabricated layers crystallized in the wurtzite phase and had a dominant orientation along the a-axis. The texture coefficient (increasing from F = 0.08 for the non-annealed layer to F = 0.94 for the annealed layer at 400 °C) and grain size (D = 110 ÷ 140 nm) were calculated. Optical constants, such as the refractive index n (1.62) and the extinction coefficient k (0.1 ÷ 0.4), were determined from the ultraviolet–visible–near-infrared transmission spectrum using the envelope method. The value of the optical band gap was determined, which is lower than for pure ZnO. Increasing the annealing temperature of the ZnO:Co layer increases the Urbach energy from 0.20 to 0.25 eV, which shows the difference in the type of growth defects in the ZnO matrix.

The properties of Sb₂S₃ and Sb₂Se₃ thin films of variable thickness deposited onto Al₂O₃, Si, and KCl substrates are investigated by the method of pulsed laser ablation. The samples are obtained at a substrate temperature of 180°C in a vacuum chamber with a residual pressure of 10⁻⁵ Torr. The thickness of the films amounted to 40–1500 nm. The structure of the bulk material of the targets and films is investigated by the methods of X-ray diffraction and transmission high-energy electron diffraction, respectively. The electrical properties of the films are investigated in the temperature range of 253–310 K. It is shown that the films have semiconductor properties. The structural features of the films determine their optical parameters.