Materials performance in structural applications is often restricted by a transition from ductile response to brittle fracture with decreasing temperature. This transition is currently viewed as being controlled either by dislocation mobility or by the nucleation of dislocations. Fracture experiments on tungsten single crystals reported here provide evidence for the importance of dislocation nucleation for the fracture toughness in the semibrittle regime. However, it is shown that the transition itself, in general, is controlled by dislocation mobility rather than by nucleation.

The defects and subsurface damages induced by crystal growth and micro/nano-machining have a significant impact on the functional performance of machined products. Raman spectroscopy is an efficient, powerful, and non-destructive testing method to characterize these defects and subsurface damages. This paper aims to review the fundamentals and applications of Raman spectroscopy on the characterization of defects and subsurface damages in micro/nano-machining. Firstly, the principle and several critical parameters (such as penetration depth, laser spot size, and so on) involved in the Raman characterization are introduced. Then, the mechanism of Raman spectroscopy for detection of defects and subsurface damages is discussed. The Raman spectroscopy characterization of semiconductor materials’ stacking faults, phase transformation, and residual stress in micro/nano-machining is discussed in detail. Identification and characterization of phase transformation and stacking faults for Si and SiC is feasible using the information of new Raman bands. Based on the Raman band position shift and Raman intensity ratio, Raman spectroscopy can be used to quantitatively calculate the residual stress and the thickness of the subsurface damage layer of semiconductor materials. The Tip-Enhanced Raman Spectroscopy (TERS) technique is helpful to dramatically enhance the Raman scattering signal at weak damages and it is considered as a promising research field.

Using molecular-dynamics simulation we simulate nanoindentation into the three principal surfaces—the (100), (110), and (111) surface—of Cu and Al. In the elastic regime, the simulation data agree fairly well with the linear elastic theory of indentation into an elastically anisotropic substrate. With increasing indentation depth, the effect of pressure hardening becomes visible. When the critical stress for dislocation nucleation is reached, even the elastically isotropic Al shows a strong dependence of the force-displacement curves on the surface orientation. After the load drop, when plasticity has set in, the influence of the surface orientation is lost, and the contact pressure (hardness) becomes independent of the surface orientation.