Humidity sensing is important to a variety of technologies and industries, ranging from environmental and industrial monitoring to medical applications. Although humidity sensors abound, few available solutions are thin, transparent, compatible with large-area sensor production and flexible, and almost none are fast enough to perform human respiration monitoring through breath detection or real-time finger proximity monitoring via skin humidity sensing. This work describes chemiresistive graphene-based humidity sensors produced in few steps with facile liquid phase exfoliation followed by Langmuir–Blodgett assembly that enables active areas of practically any size. The graphene sensors provide a unique mix of performance parameters, exhibiting resistance changes up to 10% with varying humidity, linear performance over relative humidity (RH) levels between 8% and 95%, weak response to other constituents of air, flexibility, transparency of nearly 80%, and response times of 30 ms. The fast response to humidity is shown to be useful for respiration monitoring and real-time finger proximity detection, with potential applications in flexible touchless interactive panels.

Squares and circles are basic patterns for most mask designs of silicon microdevices. Evolution of etched Si crystallographic planes defined by square and circle patterns in the masking layer is presented and analyzed in this paper. The sides of square patterns in the masking layer are designed along predetermined crystallographic directions. Etching of a (100) silicon substrate is performed in 25 wt % tetramethylammonium hydroxide (TMAH) water solution at the temperature of 80 °C. Additionally, this paper presents three-dimensional (3D) simulations of the profile evolution during silicon etching of designed patterns based on the level-set method. We analyzed etching of designed patterns in the shape of square and circle islands. The crystallographic planes that appear during etching of 3D structures in the experiment and simulated etching profiles are determined. A good agreement between dominant crystallographic planes through experiments and simulations is obtained. The etch rates of dominant exposed crystallographic planes are also analytically calculated.

This paper presents etching of convex corners with sides along and crystallographic directions in a 25 wt% tetramethylammonium hydroxide (TMAH) water solution at 80 °C. We analyzed parallelograms as the mask patterns for anisotropic wet etching of Si (100). The sides of the parallelograms were designed along and crystallographic directions (1 < n < 8). The acute corners of islands in the masking layer formed by and crystallographic directions were smaller than 45°. All the crystallographic planes that appeared during etching in the experiment were determined. We found that the obtained types of 3D silicon shape sustain when n > 2. The convex corners were not distorted during etching. Therefore, no convex corner compensation is necessary. We fabricated three matrices of parallelograms with sides along crystallographic directions and as examples for possible applications. Additionally, the etching of matrices was simulated by the level set method. We obtained a good agreement between experiments and simulations.

We present the design, simulation, fabrication and characterization of monolithically integrated high resistivity p-type boron-diffused silicon two-zone heaters in a model high temperature microreactor intended for nanoparticle fabrication. We used a finite element method for simulations of the heaters’ operation and performance. Our experimental model reactor structure consisted of a silicon wafer anodically bonded to a Pyrex glass wafer with an isotropically etched serpentine microchannels network. We fabricated two separate spiral heaters with different temperatures, mutually thermally isolated by barrier apertures etched throughout the silicon wafer. The heaters were characterized by electric measurements and by infrared thermal vision. The obtained results show that our proposed procedure for the heater fabrication is robust, stable and controllable, with a decreased sensitivity to random variations of fabrication process parameters. Compared to metallic or polysilicon heaters typically integrated into microreactors, our approach offers improved control over heater characteristics through adjustment of the Boron doping level and profile. Our microreactor is intended to produce titanium dioxide nanoparticles, but it could be also used to fabricate nanoparticles in different materials as well, with various parameters and geometries. Our method can be generally applied to other high-temperature microsystems.

A temperature sensor based on four thin-film resistors is presented. Four resistors are made in the form of thin metal layer meanders on the surface of a silicon chip. Two resistors are covered with a layer of 2.3 µm thick hard baked photoresist. Two other resistors are exposed to ambient air. The photoresist cover on two of the resistors makes a mismatch in the temperature coefficient of resistance between the covered and exposed resistors, thus enabling functionality of the system as a temperature sensor. The resistors are connected in the Wheatstone bridge configuration in order to enhance the sensitivity of the structure. Resistor meanders are 500 µm × 500 µm in lateral dimensions, each consisting of a 10 µm wide metal strip with 10 µm clearance between the strips. The total length of each strip is 12.5 mm. The material used for the meanders is 100 nm thick sputtered gold. The sensor was tested in a temperature chamber in the range from 80 °C to −50 °C. The matching between the sensor’s output and the readings obtained by the Pt1000 reference sensor was within ±0.1 °C (static), but the influence of water vapor adsorption at the exposed resistors surface on temperature measurements was visible. The sensor has potential applications in temperature measurements in air.

The key equipment for performing aerodynamic testing of objects, such as road and railway vehicles, aircraft, and wind turbines, as well as stationary objects such as bridges and buildings, are multichannel pressure measurement instruments (pressure scanners). These instruments are typically based on arrays of separate pressure sensors built in an enclosure that also contains temperature sensors used for temperature compensation. However, there are significant limitations to such a construction, especially when increasing requirements in terms of miniaturization, the number of pressure channels, and high measurement performance must be met at the same time. In this paper, we present the development and realization of an innovative MEMS multisensor chip, which is designed with the intention of overcoming these limitations. The chip has four MEMS piezoresistive pressure-sensing elements and two resistive temperature-sensing elements, which are all monolithically integrated, enabling better sensor matching and thermal coupling while providing a high number of pressure channels per unit area. The main steps of chip development are preliminary chip design, numerical simulations of the chip’s mechanical behavior when exposed to the measured pressure, final chip design, fabrication processes (photolithography, thermal oxidation, diffusion, layer deposition, micromachining, anodic bonding, and wafer dicing), and electrical testing.