Perovskite solar cells (PSCs) are a promising and fast-growing type of photovoltaic cell due to their low cost and high conversion efficiency. The high efficiency of PSCs is closely related to the quality of the photosensitive layer, and the high-quality light absorbing layer depends on the growth condition of the crystals. In the formation of high-quality crystals, annealing is an indispensable and crucial part, which serves to evaporate the solvent and drive the crystallization of the film. Various annealing methods have different effects on the promotion of the film growth process owing to the way they work. Here, this review will present a discussion of the growth puzzles and quality of perovskite crystals under different driving forces, and then explain the relationship between the annealing driving force and crystal growth. We divided the main current annealing methods into physical and chemical annealing, which has never been summarized before. The main annealing methods currently reported for crystal growth are summarized to visualize the impact of annealing design strategies on photovoltaic performance, while the growth mechanisms of thin films under multiple annealing methods are also discussed. Finally, we suggest future perspectives and trends in the industrial fabrication of PSCs in the future. The review promises industrial manufacturing of annealed PSCs. The review is expected to facilitate the industrial fabrication of PSCs.

In the photovoltaic industry, an antireflection coating consisting of three SiN_x layers with different refractive indexes is generally adopted to reduce the reflectance and raise the efficiency of monocrystalline silicon PERC (passivated emitter and rear cell) solar cells. However, for SiN_x, a refractive index as low as about 1.40 cannot be achieved, which is the optimal value for the third layer of a triple-layer antireflection coating. Therefore, in this report the third layer is replaced by SiO_x, which possesses a more appropriate refractive index of 1.46, it and can be easily integrated into the SiN_x deposition process with the plasma-enhanced chemical vapor deposition (PECVD) method. Through simulation and analysis with SunSolve, three different thicknesses were selected to construct the SiO_x third layer. The replacement of 15 nm SiN_x with 30 nm SiO_x as the third layer of antireflection coating can bring about an efficiency gain of 0.15%, which originates from the reflectance reduction and spectral response enhancement below about 550 nm wavelength. However, because the EVA encapsulation material of the solar module absorbs light in short wavelengths, the spectral response advantage of solar cells with 30 nm SiO_x is partially covered up, resulting in a slightly lower cell-to-module (CTM) ratio and an output power gain of only 0.9 W for solar module.

Multicrystalline silicon (mc-Si) PERC (passivated emitter and rear cell) solar cells suffer from severe light-induced degradation (LID), which mainly consists of two mechanisms, namely, BO-LID (boron–oxygen complex-related LID) and LeTID (light and elevated temperature induced degradation). The impact of thermal treatment on the LID of a mc-Si PERC solar cell is investigated in this work. The LID of mc-Si PERC solar cells could be alleviated by lowering the peak temperature of thermal treatment (namely sintering), perhaps because fewer impurities present in mc-Si tended to dissolve into interstitial atoms, which have the tendency to form LeTID-related recombination active complexes. The LID could also be effectively restrained by partially replacing the boron dopant with gallium, which is ascribed to the decreased amount of boron–oxygen (B–O) complexes. This work provides a facile way to solve the severe LID problem in mc-Si PERC solar cells in mass production.