This paper presents a high-temperature probe suitable for operating in harsh industrial applications as a reliable alternative to low-lifespan conventional solutions, such as thermocouples. The temperature sensing element is a Schottky diode fabricated on 4H-SiC wafers, with Ni as the Schottky metal, which allows operation at temperatures up to 400 °C, with sensitivities over 2 mV/°C and excellent linearity (R² > 99.99%). The temperature probe also includes dedicated circuitry for signal acquisition and conversion to the 4 mA–20 mA industrial standard output signal. This read-out circuit can be calibrated for linear response over a tunable temperature detection range. The entire system is designed for full electrical and mechanical compatibility with existing conventional probe casings, allowing for seamless implementation in a factory’s sensor network. Such sensors are tested alongside standard thermocouples, with matching temperature monitoring results, over several months, in real working conditions (a cement factory), up to 400 °C.

A SiC Schottky dual-diode temperature-sensing element, suitable for both complementary variation of V_F with absolute temperature (CTAT) and differential proportional to absolute temperature (PTAT) sensors, is demonstrated over 60–700 K, currently the widest range reported. The structure’s layout places the two identical diodes in close, symmetrical proximity. A stable and high-barrier Schottky contact based on Ni, annealed at 750 °C, is used. XRD analysis evinced the even distribution of Ni₂Si over the entire Schottky contact area. Forward measurements in the 60–700 K range indicate nearly identical characteristics for the dual-diodes, with only minor inhomogeneity. Our parallel diode (p-diode) model is used to parameterize experimental curves and evaluate sensing performances over this far-reaching domain. High sensitivity, upwards of 2.32 mV/K, is obtained, with satisfactory linearity (R² reaching 99.80%) for the CTAT sensor, even down to 60 K. The PTAT differential version boasts increased linearity, up to 99.95%. The lower sensitivity is, in this case, compensated by using a high-performing, low-cost readout circuit, leading to a peak 14.91 mV/K, without influencing linearity.

Extending the lifetime of power light-emitting diodes (LEDs) is achievable if proper control methods are implemented to reduce the side effects of an excessive junction temperature, T_J. The accuracy of state-of-the-art LED junction temperature monitoring techniques is negatively affected by several factors, such as the use of external sensors, calibration procedures, devices aging, and technological diversity among samples with the same part number. Here, a novel method is proposed, indeed based on the well-known technique consisting in tracking the LED forward voltage drop when a fixed forward current is imposed but exploiting the voltage variation with respect to room temperature. This method, which limits the effects of sample heterogeneity, is applied to a set of ten commercial devices. The method led to an effective reduction of the measurement error, which was below 1 °C.

An EEPROM (electrically erasable programmable read-only memory) reprogrammable fuse for trimming a digital temperature sensor is designed in a 0.18-µm CMOS EEPROM. The fuse uses EEPROM memory cells, which allow multiple programming cycles by modifying the stored data on the digital trim codes applied to the thermal sensor. By reprogramming the fuse, the temperature sensor can be adjusted with an increased trim variation in order to achieve higher accuracy. Experimental results for the trimmed digital sensor showed a +1.5/−1.0 ℃ inaccuracy in the temperature range of −20 to 125 ℃ for 25 trimmed DTS samples at 1.8 V by one-point calibration. Furthermore, an average mean of 0.40 ℃ and a standard deviation of 0.70 ℃ temperature error were obtained in the same temperature range for power supply voltages from 1.7 to 1.9 V. Thus, the digital sensor exhibits similar performances for the entire power supply range of 1.7 to 3.6 V.

For proper operation in real industrial conditions, gas sensors require readout circuits which offer accuracy, noise robustness, energy efficiency and portability. We present an innovative, dedicated readout circuit with a phase locked loop (PLL) architecture for SiC-MOS capacitor sensors. A hydrogen detection system using this circuit is designed, simulated, implemented and tested. The PLL converts the MOS nonlinear small-signal capacitance (affected by hydrogen) into an output voltage proportional to the detected gas concentration. Thus, the MOS sensing element is part of the PLL’s voltage-controlled oscillator. This block effectively provides a small AC signal (around 70 mV at 1 MHz) for the sensor and acquires its response. The correct operation of the proposed readout circuit is validated by simulations and experiments. Hydrogen measurements are performed for concentrations up to 1600 ppm. The PLL output exhibited voltage variations close to those discernable from experimental C-V curves, acquired with a semiconductor characterization system, for all investigated MOS sensor samples.

In this paper, a nonvolatile switch based on n-type floating-gate transistors is described. The switch states are programmed through the memory cell floating-gate voltage, allowing higher levels than the application supply. Furthermore, due to its nonvolatile nature, the power consumption is reduced. The on-state resistance, which does not depend on the supply voltage, is one of the greatest advantages of this type of switch in comparison to conventional switches. This benefit can be successfully exploited in low-voltage applications. The switch on-resistance can be increased without the need for increasing the switch area. The characteristics of the proposed switch were confirmed by the experimental results obtained on a test chip fabricated in a 0.18 µm EEPROM process. Measured on-resistance values between 45 and 70 Ω were obtained for a floating-gate voltage of 6.2 V and input source levels below 2 V. The required programming voltage was 18 V. The maximum off-state leakage current was measured at 5 nA.