Phase change materials (PCMs) combined with silicon photonics are emerging as a promising platform to realize miniature photonic devices. We study the basic optical properties of a sub-wavelength-dimension silicon ridge waveguide with a 20-nm-thick Ge2Sb2Te5 (GST) top-clad layer. Numerical simulations show that the effective index of the Si-GST hybrid waveguide varies significantly when the GST changes from the amorphous to the crystalline states. This change can be utilized to make micron-size photonic devices. To experimentally verify the effectiveness of the Si-GST hybrid waveguide on light wave manipulation, we fabricated a series of unbalanced Mach-Zehnder interferometers with one arm connected with a section of Si-GST hybrid waveguide in different lengths. The transmission spectra are measured and the complex effective indices are extracted for GST at crystalline, amorphous and intermediate phases. The experimental results overall agree well with the simulation ones. The nonvolatile property of GST makes it attractive to reduce the static power consumption. This research represents a significant step towards the realization of ultra-compact Si-GST hybrid devices that will play a key role in high-density photonic integrated circuits, opening the door to many potential applications, including optical switch, memory and logic operation. Corresponding authors: Linjie Zhou (e-mail: ljzhou@sjtu.edu.cn)

We present a ${\mathrm{Ge}}_2{\mathrm{Sb}}_2{\mathrm{Te}}_5$ (GST)-integrated ring resonator with the tuning enabled by an all-optical phase change of GST using a sequence of optical pulses. The tuning is non-volatile and repeatable, with no static power consumption due to the “self-holding” feature of the GST phase-change material. The 2 μm long GST can be partially crystallized by controlling the number of pulses, increasing the tuning freedom. The coupling between the ring resonator and the bus waveguide is based on an asymmetric Mach–Zehnder interferometer. The coupling strength is wavelength-dependent, so that an optimal wavelength can be selected for the probe light to get more than 20 dB transmission contrast between the amorphous and crystalline GST states.

In the following study, we propose optical memristive switches consisting of a silicon waveguide integrated with phase-change material Ge₂Sb₂Te₅ (GST). Thanks to its high refractive index contrast between the crystalline and amorphous states, a miniature-size GST material can offer a high switching extinction ratio. We optimize the device design by using finite-difference-time-domain (FDTD) simulations. A device with a length of 4.7 μm including silicon waveguide tapers exhibits a high extinction ratio of 33.1 dB and a low insertion loss of 0.48 dB around the 1550 nm wavelength. The operation bandwidth of the device is around 60 nm.

We present the design, simulation, and experimental demonstration of a Si-GST grating assisted contra-directional coupler for optical switching. The effective refractive index of the GST-loaded silicon waveguide changes significantly when the GST is switched from the amorphous state to the crystalline state, allowing for large tuning of the propagation constant. The two coupled waveguides are designed to satisfy the phase-match condition only at the amorphous state to achieve Bragg reflection at the drop-port. Experimental results show that the device insertion loss is less than 5 dB and the extinction ratio is more than 15 dB with an operation bandwidth of 2.2 nm around the 1576 nm operating wavelength. Due to the nonvolatile property of GST, there is no static power consumption to maintain the two states. It is the first demonstration of a GST-enabled grating coupler that can be switched by phase change material.

This paper reports on the design optimization of compact optical ON-OFF switches based on a GST-clad silicon rib waveguide and compares it to a GST-clad silicon nanowire at the telecommunication wavelength 1.55 µm. Effective index and modal loss of the quasi-TE modes are calculated by a full-vectorial H-field finite element method. It shows that the electro-refraction effect-based switch may not be viable because of the higher modal loss in the GST crystalline state. On the other hand, the larger modal loss difference between GST amorphous and crystalline states would be more suitable for an electro-absorption type switch design. The effect of silicon slab thickness, silicon core width, and GST layer thickness for both the waveguides are presented. As the presence of the GST layer modifies the mode field profiles, so the incurring coupling loss at the butt-coupled junctions between the input/output silicon waveguide and Si-GST waveguide are also calculated by using the least squares boundary residual method. These results show that the GST-clad silicon rib waveguide with a 500-nm-wide silicon core, 60-90 nm thick silicon slab, and 15-25 nm thick GST layer is the optimal self-sustained switch design. In this case, a very compact, 2-5 µm long device is expected to show an extinction ratio of more than 20 dB with the total insertion loss of only 0.36 dB.