Majid Zarghami

Mr. Majid Zarghami

orcid

Research Focus & Metrics

Academic Career Length

8Years (2019-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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16 July 2020 in IEEE Journal of Solid-State Circuits
Verified
Journal Article
Closed access
MZMajid Zarghami
Majid Zarghami
Leonardo GaspariniLeonardo Gasparini
Leonardo Gasparini
LPLuca Parmesan
Luca Parmesan
MMManuel Moreno-Garcia
Manuel Moreno-Garcia
ASAndre Stefanov
Andre Stefanov
Matteo PerenzoniMatteo Perenzoni
Matteo Perenzoni
This article reports the design and characterization of a 32 x 32 single-photon avalanche diode (SPAD) time-resolved image sensor for quantum imaging applications fabricated in a 150-nm CMOS standard technology. A per-SPAD time-to-digital converter (TDC) records the spatial cross correlation functions of a flux of entangled photons. Each 44.64-μm pixel with 19.48% fill-factor features a 210.2-ps resolution, 50-ns (8-bit) range TDC with 1.28-LSB differential and 1.92-LSB integral nonlinearity (DNL/INL). The sensor achieves an observation rate of up to 1 MHz through a current-based mechanism that avoids reading empty frames when the photon rates are low. A row-skipping mechanism detects the absence of SPAD activity in a row to increase the duty cycle. These two features require only three transistors in each pixel. The sensor functionality is demonstrated in a quantum imaging experiment that achieves super-resolution.

7 August 2019 in Instruments
Verified
Journal Article
Open access
PDF file
MZMajid Zarghami
Majid Zarghami
Leonardo GaspariniLeonardo Gasparini
Leonardo Gasparini
Matteo PerenzoniMatteo Perenzoni
Matteo Perenzoni
Lucio PancheriLucio Pancheri
Lucio Pancheri
This paper investigates the use of image sensors based on complementary metal–oxide–semiconductor (CMOS) single-photon avalanche diodes (SPADs) in high dynamic range (HDR) imaging by combining photon counts and timestamps. The proposed method is validated experimentally with an SPAD detector based on a per-pixel time-to-digital converter (TDC) architecture. The detector, featuring 32 × 32 pixels with 44.64-µm pitch, 19.48% fill factor, and time-resolving capability of ~295-ps, was fabricated in a 150-nm CMOS standard technology. At high photon flux densities, the pixel output is saturated when operating in photon-counting mode, thus limiting the DR of this imager. This limitation can be overcome by exploiting the distribution of photon arrival times in each pixel, which shows an exponential behavior with a decay rate dependent on the photon flux level. By fitting the histogram curve with the exponential decay function, the extracted time constant is used to estimate the photon count. This approach achieves 138.7-dB dynamic range within 30-ms of integration time, and can be further extended by using a timestamping mechanism with a higher resolution.