Mr. Matteo Perenzoni
Fondazione Bruno Kessler, Via Sommarive 14, 38123 Trento, Italy
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Academic Career Length
21Years (2006-Present)
(Calculated once Scilit publication data is synced: current year − year of first publication + 1)
Representative Publications
View All Publications21 October 2013 in IEEE Journal of Solid-State Circuits
Journal Article
LBLeo H. C. Braga
Leo H. C. Braga
Leonardo GaspariniLGLindsay Grant
Lindsay Grant
RHRobert Henderson
Robert HendersonNMNicola Massari
Nicola Massari
RWRichard Walker
Richard Walker +2
An 8 × 16 pixel array based on CMOS small-area silicon photomultipliers (mini-SiPMs) detectors for PET applications is reported. Each pixel is 570 × 610 μm2 in size and contains four digital mini-SiPMs, for a total of 720 SPADs, resulting in a full chip fill-factor of 35.7%. For each gamma detection, the pixel provides the total detected energy and a timestamp, obtained through two 7-b counters and two 12-b 64-ps TDCs. An adder tree overlaid on top of the pixel array sums the sensor total counts at up to 100 Msamples/s, which are then used for detecting the asynchronous gamma events on-chip, while also being output in real-time. Characterization of gamma detection performance with an 3 × 3 × 5 mm3 LYSO scintillator at 20°C is reported, showing a 511-keV gamma energy resolution of 10.9% and a coincidence timing resolution of 399 ps.
28 November 2016 in IEEE Journal of Solid-State Circuits
Journal Article
This paper describes a 64×64-pixel 3-D imager based on single-photon avalanche diodes (SPADs) for long-range applications, such as spacecraft navigation and landing. Each 60-$\mu \text{m}$ pixel includes eight SPADs combined as a digital silicon photomultiplier, a triggering logic for photons temporal correlation, a 250-ps 16-b time-to-digital converter, and an intensity counter, with an overall 26.5% fill factor. The sensor provides time-of-flight and intensity information even with a background intensity up to 100 MPhotons/s/pixel. The sensor can work in imaging (short range, 3-D image) and altimeter (long range, single point) modes, achieving up to 300-m and 6-km maximum distance with <;0.2-m and <;0.5-m precision, respectively, consuming less than 100 mW.
20 September 2018 in Optica
Journal Article
MUManuel Unternährer
Manuel UnternährerBBBänz Bessire
Bänz Bessire
Leonardo GaspariniMatteo PerenzoniASAndre Stefanov
Andre StefanovThe Abbe–Rayleigh diffraction limit constrains spatial resolution for classical imaging methods. Quantum imaging exploits correlations between photons to reproduce structures with higher resolution. Quantum-correlated -photon states were shown to potentially surpass the classical limit by a factor of , corresponding to the Heisenberg limit, using a method known as optical centroid measurement (OCM). In this work, the theory of OCM is reformulated for its application in imaging. Using entangled photon pairs and a recently developed integrated time-resolving detector array, OCM is implemented in a proof-of-principle experiment that demonstrates the expected enhancement. Those results show the relevance of entanglement for imaging at the Heisenberg limit.
15 October 2015 in IEEE Journal of Solid-State Circuits
Journal Article
Matteo PerenzoniNMNicola Massari
Nicola Massari
DPDaniele Perenzoni
Daniele Perenzoni
Leonardo GaspariniDSDavid Stoppa
David Stoppa
A single-photon, time-gated, 160 × 120 pixel imager is presented for its application in fluorescence lifetime imaging microscopy. Exploiting single-photon avalanche diodes and an extremely compact pixel circuitry-only seven MOSFETs and one MOSCAP-the imager is capable of gathering information about photon position, number, and time distribution, enabling cost-effective devices for scientific imaging applications. This is achieved thanks to the photon counting and time-gating capabilities implemented in the analog domain, which in turn enable a 15 μm pixel with a 21% fill-factor. A reconfigurable column circuitry supports both the analog conventional readout and a self-referenced analog-to-digital conversion, able to cancel out the pixel-to-pixel nonuniformities, and speeding up the framerate to 486 fps. The imager, featuring also a delay locked loop to stabilize the internal waveform generation for reliable timing performance, has been implemented in a standard high-voltage 0.35 μm CMOS technology. Measurements in a fluorescent lifetime setup have been performed, comparing the results with single-point acquisitions made with commercial time-correlated equipment.
23 December 2010 in IEEE Journal of Solid-State Circuits
Journal Article
DSDavid Stoppa
David Stoppa
NMNicola Massari
Nicola Massari
Lucio PancheriMMMattia Malfatti
Mattia Malfatti
Matteo PerenzoniLGLorenzo Gonzo
Lorenzo Gonzo
This paper presents the design and characterization of a lock-in pixel array based on a buried channel photo-detector aimed at time-of-flight range imaging. The proposed photo-demodulator has been integrated in a 10-μm pixel pitch with a fill factor of 24%, and is capable of a maximum demodulation frequency of 50 MHz with a contrast of 29.5%. The sensor has been fabricated in a 0.18-μm CMOS imaging technology and assembled in a range camera system setup. The system provides a stream of three-dimensional images at 5-20 fps on a 3-6 m range, with a linearity error lower than 0.7% and a repeatability of 5-16 cm, while the best achievable precision is 2.7 cm at a 50-MHz modulation frequency.
Journal Article
ATAlessandro Tontini
Alessandro TontiniLeonardo GaspariniMatteo PerenzoniWe present a Montecarlo simulator developed in Matlab® for the analysis of a Single Photon Avalanche Diode (SPAD)-based Complementary Metal-Oxide Semiconductor (CMOS) flash Light Detection and Ranging (LIDAR) system. The simulation environment has been developed to accurately model the components of a flash LIDAR system, such as illumination source, optics, and the architecture of the designated SPAD-based CMOS image sensor. Together with the modeling of the background noise and target topology, all of the fundamental factors that are involved in a typical LIDAR acquisition system have been included in order to predict the achievable system performance and verified with an existing sensor.
About Me
Matteo Perenzoni graduated with a degree in electronics engineering from
the University of Padua, Italy, and he received his PhD in physics from the University
of Ferrara, Italy. In 2002, he worked with the University of Padua, and in 2004, he joined Fondazione Bruno Kessler (FBK),
Trento, Italy, as a researcher working at the Integrated Radiation and Image
Sensors (IRIS) research unit. Meanwhile, he taught electronics and sensors at
the Master and Doctorate School, University of Trento. In 2014, he was a
visiting research scientist with the THz Sensing Group, Microelectronics
Department, TU Delft, Netherlands. From 2017 to 2021, he led the IRIS research
unit at FBK and worked in the field of radiation and image sensors. Since 2021, he
joined Sony as head of the analog IC design team at Sony Europe Technology
Development Centre in Trento, Italy. Dr. Perenzoni was a member of the Technical Program
Committee of the European Solid-State Circuit Conference (ESSCIRC) from 2015 to
2021 and was a member of the International Solid-State Circuit Conference (ISSCC) from 2018
to 2022, and he was an IEEE distinguished lecturer of the SSCS from 2022 to 2023. His research
interests include advanced CMOS image sensors, single-photon detection, THz
image sensors, and the optimization of analog-integrated circuits.