This study focuses on the effect of the substrate temperature (T_S) on the quality of VO₂ thin films prepared by DC magnetron sputtering. T_S was varied from 350 to 600 °C and the effects on the surface morphology, microstructure, optical and electrical properties of the films were investigated. The results show that T_S below 500 °C favors the growth of V₂O₅ phase, whereas higher T_S (≥500 °C) facilitates the formation of the VO₂ phase. Optical characterization of the as-prepared VO₂ films displayed a reduced optical transmittance ($\tilde{T}$) across the near-infrared region (NIR), reduced phase transition temperature (T_t), and broadened hysteresis width (ΔH) through the phase transition region. In addition, a decline of the luminous modulation $(\mathsf{\Delta }{\tilde{T}}_{\mathrm{lum}})$ and solar modulation ($\mathsf{\Delta }{\tilde{T}}_{\mathrm{sol}}$) efficiencies of the as-prepared films have been determined. Furthermore, compared with the high-quality films reported previously, the electrical conductivity (σ) as a function of temperature (T) reveals reduced conductivity contrast (Δσ) between the insulating and metallic phases of the VO₂ films, which was of the order of 2. These outcomes indicated the presence of defects and unrelaxed lattice strain in the films. Further, the comparison of present results with those in the literature from similar works show that the preparation of high-quality films at T_S lower than 650 °C presents significant challenges.

In this work, VO₂ thin films were deposited on Si wafers (onto (100) surface) by DC magnetron sputtering under different cathode bias voltages. The effects of substrate biasing on the structural and optical properties were investigated. The results show that the metal–insulator transition (MIT) temperature of VO₂ thin films can be increased up to 14 K by applying a cathode bias voltage, compared to deposition conditions without any bias. The decrease in the transition efficiency and increase in the transition temperature are attributed to the enlarged grain size, increased defects, and the residual stress in the VO₂ thin films induced by biasing. The optical transmittance measurements for different thickness films indicate an attenuation coefficient of 3.1 × 10⁷ m⁻¹ at 2000 nm or an extinction coefficient of 4.9 in the metal phase. The optical transmittance vs wavelength characteristics point to an indirect bandgap of 0.6 ± 0.05 eV and significant scattering in the bulk and/or at the interface.

This work presents the excess noise and thermoelectric (Seebeck) measurements on polycrystalline vanadium dioxide (VO2) thin films. Noise spectral power density (SPD) of current fluctuations in the semiconducting (SC) phase had a typical flicker noise (f−γ) characteristic with an average slope parameter γ of 1.13. Normalized SPD (Sn) values obtained in the SC-phase indicate that the noise originates in the bulk of the film. On the contrary, in the metallic (M)-phase, γ values were greater than unity, and the observed Sn values indicated that the origin of the noise is most likely from the contacts or surface rather than the bulk. A general decrease was observed in Sn by a factor of 4–5 from the SC- to M-phase. Moreover, Sn in the SC-phase showed no temperature dependence. An interpretation based on the number of charge carrier fluctuations in Hooge's model led to an unrealistically high Hooge parameter and had to be ruled out. We propose that the fluctuations are related to the mobility fluctuations of carriers arising primarily from grain-boundary scattering which explains the observed characteristics well. The Seebeck coefficients (S) obtained under both heating and cooling schedules showed the n-type nature of magnetron-sputtered VO2 films in the SC-phase. Differently, in the M-phase, the S value was positive. The S values obtained from the cooling schedule signified the low percolation threshold of the metal-to-insulator transition already demonstrated for VO2 thin films grown on r-cut sapphire using the Efros–Shklovskii percolation model.

The authors would like to correct a typographical error in their paper