Randolph E. Elmquist

Randolph E. Elmquist


Research Focus & Metrics

Academic Career Length

36Years (1991-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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1 May 2017 in Carbon
Verified
Journal Article
Closed access
YYYanfei Yang
Yanfei Yang
GCGuangjun Cheng
Guangjun Cheng
PMPatrick Mende
Patrick Mende
ICIrene G. Calizo
Irene G. Calizo
RFRandall M. Feenstra
Randall M. Feenstra
RERandolph E. Elmquist
Randolph E. Elmquist

18 August 2014 in Small
Verified
Journal Article
Closed access
PDF file
YYYanfei Yang
Yanfei Yang
LHLung‐I. Huang
Lung‐I. Huang
YFYasuhiro Fukuyama
Yasuhiro Fukuyama
FLFan‐Hung Liu
Fan‐Hung Liu
MRMariano A. Real
Mariano A. Real
RERandolph E. Elmquist
Randolph E. Elmquist

20 November 2018 in Communications Physics
Verified
Journal Article
Open access
PDF file
VPVishal Panchal
Vishal Panchal
YYYanfei Yang
Yanfei Yang
GCGuangjun Cheng
Guangjun Cheng
JHJiuning Hu
Jiuning Hu
MKMattias Kruskopf
Mattias Kruskopf
RERandolph E. Elmquist
Randolph E. Elmquist
Two-dimensional (2D) materials such as graphene have become the focus of extensive research efforts in condensed matter physics. They provide opportunities for both fundamental research and applications across a wide range of industries. Ideally, characterization of graphene requires non-invasive techniques with single-atomic-layer thickness resolution and nanometer lateral resolution. Moreover, commercial application of graphene requires fast and large-area scanning capability. We demonstrate the optimized balance of image resolution and acquisition time of non-invasive confocal laser scanning microscopy (CLSM), rendering it an indispensable tool for rapid analysis of mass-produced graphene. It is powerful for analysis of 1–5 layers of exfoliated graphene on Si/SiO2, and allows us to distinguish the interfacial layer and 1–3 layers of epitaxial graphene on SiC substrates. Furthermore, CLSM shows excellent correlation with conventional optical microscopy, atomic force microscopy, Kelvin probe force microscopy, conductive atomic force microscopy, scanning electron microscopy and Raman mapping.

18 July 2019 in IEEE Transactions on Electron Devices
Verified
Journal Article
Closed access
MKMattias Kruskopf
Mattias Kruskopf
ARA R
A R
APAlireza R. Panna
Alireza R. Panna
DPDinesh K. Patel
Dinesh K. Patel
HJHanbyul Jin
Hanbyul Jin
RERandolph E. Elmquist
Randolph E. Elmquist
In this paper, we show that quantum Hall resistance measurements using two terminals may be as precise as four-terminal measurements when applying superconducting split contacts. The described sample designs eliminate resistance contributions of terminals and contacts such that the size and complexity of next-generation quantized Hall resistance devices can be significantly improved.

27 August 2019 in Semiconductor Science and Technology
Verified
Journal Article
Closed access
ARA R
A R
RERandolph E. Elmquist
Randolph E. Elmquist
The quantum Hall effect (QHE), and devices reliant on it, will continue to serve as the foundation of the ohm while also expanding its territory into other SI derived units. The foundation, evolution, and significance of all of these devices exhibiting some form of the QHE will be described in the context of optimizing future electrical resistance standards. As the world adapts to using the quantum SI, it remains essential that the global metrology community pushes forth and continues to innovate and produce new technologies for disseminating the ohm and other electrical units.

10 December 2018 in IEEE Transactions on Instrumentation and Measurement
Verified
Journal Article
Closed access
ARA R
A R
APAlireza R. Panna
Alireza R. Panna
SPShamith U. Payagala
Shamith U. Payagala
MKMattias Kruskopf
Mattias Kruskopf
MKMarlin E. Kraft
Marlin E. Kraft
RERandolph E. Elmquist
Randolph E. Elmquist
We report the performance of a quantum Hall resistance standard based on epitaxial graphene maintained in a 5-T tabletop cryocooler system. This quantum resistance standard requires no liquid helium and can operate continuously, allowing year-round accessibility to quantized Hall resistance measurements. The ν = 2 plateau, with a value of R K /2, also seen as R H , is used to scale to 1 kQ using a binary cryogenic current comparator (BCCC) bridge and a direct current comparator (DCC) bridge. The uncertainties achieved with the BCCC are such as those obtained in the state-of-the-art measurements using GaAs-based devices. BCCC scaling methods can achieve large resistance ratios of 100 or more, and while room temperature DCC bridges have smaller ratios and lower current sensitivity, they can still provide alternate resistance scaling paths without the need for cryogens and superconducting electronics. Estimates of the relative uncertainties of the possible scaling methods are provided in this report, along with a discussion of the advantages of several scaling paths. The tabletop system limits are addressed as are potential solutions for using graphene standards at higher currents.