Heavy ion microbeam experiment was performed on Xilinx 28 nm System-on-Chip (SoC) at Beijing HI-13 tandem accelerator in China Institute of Atomic Energy (CIAE). Five functional blocks of Xilinx Zynq-7020 SoC processing system (PS) were irradiated and tested. The distributions of SEE sensitivity regions and cross sections of OCM, D-Cache, ALU, FPU and Peripheral were first obtained. Results suggest that the most sensitive block among the five blocks is D-Cache and the least is FPU, and the SEE sensitivity of OCM, ALU and Peripheral are at the same level.

This paper presents a 35 nV/√Hz analog front-end (AFE) circuitdesigned in the UMC 40 nm CMOS technology for the acquisition of biopotential signal. The proposed AFE consists of a capacitive-coupled instrumentation amplifier (CCIA) and a combination of a programmable gain amplifier (PGA) and a low-pass filter (LPF). The CCIA includes a DC servo loop (DSL) to eliminate electrode DC offset (EDO) and a ripple rejection loop (RRL) with self-zeroing technology to suppress high-frequency ripples caused by the chopper. The PGA-LPF is realized using switched-capacitor circuits, enabling adjustable gain and bandwidth. Implemented in theUMC 40 nm CMOS process, the AFE achieves an input impedance of 368 MΩ at 50 Hz, a common-mode rejection ratio (CMRR) of 111 dB, an equivalent input noise of 1.04 μVrms over the 0.5–1 kHz range, and a maximum elimination of 50 mV electrode DC offset voltage. It occupies an area of only 0.39 × 0.47 mm² on the chip, with a power consumption of 8.96 μW.

Traditionally, studies have primarily focused on single event effects in aerospace electronics. However, current research has confirmed that atmospheric neutrons can also induce single event effects in China’s advanced technology relay protection devices. Spallation neutron irradiation tests on a Loongson 2K1000 system-on-chip based relay protection device have revealed soft errors, including abnormal sampling, refusal of operation and interlock in the relay protection device. Given the absence of standardized evaluation methods for single event effects on relay protection devices, the following research emphasizes the use of Monte Carlo simulation and software fault injection. Various types of single event upsets, such as single bit upsets, dual bit upsets, and even eight bit upsets, were observed in Monte Carlo simulations where atmospheric neutrons hit the chip from different directions (top and bottom). The simulation results indicated that the single event effect sensitivity of the relay protection device was similar whether the neutron hit from the top or the bottom. Through software fault injection, the study also identified soft errors caused by neutron induced single event upsets on the Loongson 2K1000 system, including failure to execute, system halt, time out, and error result. And the soft error number of system halts and error results exceeded that of time outs and failures to execute in all three tested programs. This research represents a preliminary assessment of single event effects on relay protection devices and is expected to provide valuable insights for evaluating the reliability of advanced technology relay protection devices.

Relay protection devices must operate continuously throughout the year without anomalies. With the integration of advanced technology and process chips in secondary equipment, new risks need to be addressed to ensure the reliability of these relay protection devices. One such risk is the impact of α-particles inducing single event effects (SEEs) on the secondary equipment. To date, there has been limited assessment of the effects of α-particles on relay protection devices from a system perspective. This study evaluates the impact of SEE on relay protection devices through a Monte Carlo simulation, which is verified by α-particle radiation, fault injection, and fault tree analysis. It discusses the influence of SEEs with and without hardening measures in place. Additionally, this study examines the soft error probability when the target processor runs both general workloads and specific application workloads. The current research proposes a low-cost and effective reliability assessment method for secondary equipment considering single event effects. The findings provide new insights for the enhancement of future electric power grid systems.

The reliability of nanoscale electronic systems is important in various applications. However, they are becoming increasingly vulnerable to atmospheric neutrons. This research conducted spallation neutron irradiations on a Xilinx Zynq-7000 system on a chip using the China Spallation Neutron Source. The results were analyzed in combination with a Monte Carlo simulation to explore the impact of atmospheric neutrons on the single event effects of the target system on chip. Meanwhile, the contribution of thermal neutrons to the chip’s single event effect susceptibility was also assessed. It was found that absorbing thermal neutrons with a 2 mm Cd sheet can protect against the single event effect on the system on the chip by about 44.4%. The effects of B and Hf elements, inside the device, on a single event effect of the Xilinx Zynq-7000 system on chip were evaluated too. Additionally, it was discovered that ¹⁰B interacting with thermal neutrons was the primary cause of the thermal neutron-induced single event effect in the system on chip. Although Hf has a high neutron capture cross section, its presence does not significantly affect the sensitivity to single event effects. However, during atmospheric neutron irradiation, the presence of Hf increases the possibility of depositing the total dose in the tested chip.