In this article, a triple-band quad-element stacked multiple-input–multiple-output (MIMO) antenna is proposed for sensing applications. Each radiating element of the presented MIMO antenna consists of a diagonally truncated square patch, which is proximity coupled to the elliptical radiating patch. The proposed MIMO antenna is designed to resonate for three frequencies (4.2, 4.8, and 5.8 GHz) in the C-band range. The antenna shows circular polarization characteristics at 4.2 and 4.8 GHz frequencies. Each stacked element of the proposed antenna is excited independently through a 50 Ω coaxial feed. The Rogers RT Duroid/5880 dielectric substrate is used for the fabrication of two layers of the stacked MIMO antenna. The presented stacked MIMO antenna simulation and experimental outcomes are in good agreement.

This paper creates an approximate three-dimensional model for normal and cancerous cervical cells using image processing and computer-aided design (CAD) tools. The model is then exposed to low-frequency electric pulses to verify the work with experimental data. The transmembrane potential, pore density, and pore radius evolution are analyzed. This work adds a study of the electrodeformation of cells under an electric field to investigate cytoskeleton integrity. The Maxwell stress tensor is calculated for the dispersive bi-lipid layer plasma membrane. The solid displacement is calculated under electric stress to observe cytoskeleton integrity. After verifying the results with previous experiments, the cells are exposed to a nanosecond pulsed electric field. The nanosecond pulse is applied using a drift-step rectifier diode (DSRD)-based generator circuit. The cells’ transmembrane voltage (TMV), pore density, pore radius evolution, displacement of the membrane under electric stress, and strain energy are calculated. A thermal analysis of the cells under a nanosecond pulse is also carried out to prove that it constitutes a non-thermal process. The results showed differences in normal and cancerous cell responses to electric pulses due to changes in morphology and differences in the cells’ electrical and mechanical properties. This work is a model-driven microdosimetry method that could be used for diagnostic and therapeutic purposes.

After professor Chua has coined Memristor (non-volatile) device, numerous research on Memristor were accomplished. Memristor is two terminal inherent memory devices, capable of working in parallel computing (storage and computation). Its conductance may be modulated by applying electrical input through the oxygen vacancies. It is also capable of mimicking the behavior of brain cell. In fact, artificial intelligence has opened new avenues in both academic and industrial fields. In these research findings, we have focus, to study the morphological and electrical characteristics of 1 x 1 Hafnium dioxides (HfO2) memristors crossbar array for developing Artificial Vision System.

Memristive devices have garnered significant attention in the field of electronics over the past few decades. The reason behind this immense interest lies in the ubiquitous nature of memristive dynamics within nanoscale devices, offering the potential for revolutionary applications. These applications span from energy-efficient memories to the development of physical neural networks and neuromorphic computing platforms. In this research article, the angle toppling technique (ATT) was employed to fabricate titanium dioxide (TiO₂) nanoparticles with an estimated size of around 10 nm. The nanoparticles were deposited onto a 50 nm SiO_x thin film (TF), which was situated on an n-type Si substrate. Subsequently, the samples underwent annealing processes at temperatures of 550 °C and 950 °C. The structural studies of the sample were done by field emission gun-scanning electron microscope (FEG-SEM) (JEOL, JSM-7600F). The as-fabricated sample exhibited noticeable clusters of nanoparticles, which were less prominent in the samples annealed at 550 °C and 950 °C. The element composition revealed the presence of titanium (Ti), oxygen (O₂), and silicon (Si) from the substrate within the samples. X-ray diffraction (XRD) analysis revealed that the as-fabricated sample predominantly consisted of the rutile phase. The comparative studies of charge storage and endurance measurements of as-deposited, 550 °C, and 950 °C annealed devices were carried out, where as-grown device showed promising responses towards brain computing applications. Furthermore, the teaching–learning-based optimization (TLBO) technique was used to conduct further comparisons of results.