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Aleksei V. Emelianov
National Research University of Electronic Technology 1 Shokin square, Moscow Zelenograd 124498 Russia

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Full paper
Published: 25 January 2021 in Advanced Electronic Materials
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The fabrication of planar junctions in carbon nanomaterials is a promising way to increase the optical sensitivity of optoelectronic nanometer‐scale devices in photonic connections, sensors, and photovoltaics. Utilizing a unique lithography approach based on direct femtosecond laser processing, a fast and easy technique for modification of single‐walled carbon nanotube (SWCNT) optoelectronic properties through localized two‐photon oxidation is developed. It results in a novel approach of quasimetallic to semiconducting nanotube conversion so that metal/semiconductor planar junction is formed via local laser patterning. The fabricated planar junction in the field‐effect transistors based on individual SWCNT drastically increases the photoresponse of such devices. The broadband photoresponsivity of the two‐photon oxidized structures reaches the value of 2 × 107 A W−1 per single SWCNT at 1 V bias voltage. The SWCNT‐based transistors with induced metal/semiconductor planar junction can be applied to detect extremely small light intensities with high spatial resolution in photovoltaics, integrated circuits, and telecommunication applications.

ACS Style

Aleksei V. Emelianov; Nikita P. Nekrasov; Maksim V. Moskotin; Georgy E. Fedorov; Nerea Otero; Pablo M. Romero; Vladimir K. Nevolin; Boris I. Afinogenov; Albert G. Nasibulin; Ivan I. Bobrinetskiy. Individual SWCNT Transistor with Photosensitive Planar Junction Induced by Two‐Photon Oxidation. Advanced Electronic Materials 2021, 7, 1 .

AMA Style

Aleksei V. Emelianov, Nikita P. Nekrasov, Maksim V. Moskotin, Georgy E. Fedorov, Nerea Otero, Pablo M. Romero, Vladimir K. Nevolin, Boris I. Afinogenov, Albert G. Nasibulin, Ivan I. Bobrinetskiy. Individual SWCNT Transistor with Photosensitive Planar Junction Induced by Two‐Photon Oxidation. Advanced Electronic Materials. 2021; 7 (3):1.

Chicago/Turabian Style

Aleksei V. Emelianov; Nikita P. Nekrasov; Maksim V. Moskotin; Georgy E. Fedorov; Nerea Otero; Pablo M. Romero; Vladimir K. Nevolin; Boris I. Afinogenov; Albert G. Nasibulin; Ivan I. Bobrinetskiy. 2021. "Individual SWCNT Transistor with Photosensitive Planar Junction Induced by Two‐Photon Oxidation." Advanced Electronic Materials 7, no. 3: 1.

Journal article
Published: 10 December 2019 in Nanomaterials
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In this work, we report a novel method of maskless doping of a graphene channel in a field-effect transistor configuration by local inkjet printing of organic semiconducting molecules. The graphene-based transistor was fabricated via large-scale technology, allowing for upscaling electronic device fabrication and lowering the device’s cost. The altering of the functionalization of graphene was performed through local inkjet printing of N,N′-Dihexyl-3,4,9,10-perylenedicarboximide (PDI-C6) semiconducting molecules’ ink. We demonstrated the high resolution (about 50 µm) and accurate printing of organic ink on bare chemical vapor deposited (CVD) graphene. PDI-C6 forms nanocrystals onto the graphene’s surface and transfers charges via π–π stacking to graphene. While the doping from organic molecules was compensated by oxygen molecules under normal conditions, we demonstrated the photoinduced current generation at the PDI-C6/graphene junction with ambient light, a 470 nm diode, and 532 nm laser sources. The local (in the scale of 1 µm) photoresponse of 0.5 A/W was demonstrated at a low laser power density. The methods we developed open the way for local functionalization of an on-chip array of graphene by inkjet printing of different semiconducting organic molecules for photonics and electronics.

ACS Style

Nikita Nekrasov; Dmitry Kireev; Nejra Omerović; Aleksei Emelianov; Ivan Bobrinetskiy. Photo-Induced Doping in a Graphene Field-Effect Transistor with Inkjet-Printed Organic Semiconducting Molecules. Nanomaterials 2019, 9, 1753 .

AMA Style

Nikita Nekrasov, Dmitry Kireev, Nejra Omerović, Aleksei Emelianov, Ivan Bobrinetskiy. Photo-Induced Doping in a Graphene Field-Effect Transistor with Inkjet-Printed Organic Semiconducting Molecules. Nanomaterials. 2019; 9 (12):1753.

Chicago/Turabian Style

Nikita Nekrasov; Dmitry Kireev; Nejra Omerović; Aleksei Emelianov; Ivan Bobrinetskiy. 2019. "Photo-Induced Doping in a Graphene Field-Effect Transistor with Inkjet-Printed Organic Semiconducting Molecules." Nanomaterials 9, no. 12: 1753.

Communication
Published: 20 September 2019 in Toxins
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In this work, we report an on-chip aptasensor for ochratoxin A (OTA) toxin detection that is based on a graphene field-effect transistor (GFET). Graphene-based devices are fabricated via large-scale technology, allowing for upscaling the sensor fabrication and lowering the device cost. The sensor assembly was performed through covalent bonding of graphene’s surface with an aptamer specifically sensitive towards OTA. The results demonstrate fast (within 5 min) response to OTA exposure with a linear range of detection between 4 ng/mL and 10 pg/mL, with a detection limit of 4 pg/mL. The regeneration time constant of the sensor was found to be rather small, only 5.6 s, meaning fast sensor regeneration for multiple usages. The high reproducibility of the sensing response was demonstrated via using several recycling procedures as well as various GFETs. The applicability of the aptasensor to real samples was demonstrated for spiked red wine samples with recovery of about 105% for a 100 pM OTA concentration; the selectivity of the sensor was also confirmed via addition of another toxin, zearalenone. The developed platform opens the way for multiplex sensing of different toxins using an on-chip array of graphene sensors.

ACS Style

Nikita Nekrasov; Dmitry Kireev; Aleksei Emelianov; Ivan Bobrinetskiy. Graphene-Based Sensing Platform for On-Chip Ochratoxin A Detection. Toxins 2019, 11, 550 .

AMA Style

Nikita Nekrasov, Dmitry Kireev, Aleksei Emelianov, Ivan Bobrinetskiy. Graphene-Based Sensing Platform for On-Chip Ochratoxin A Detection. Toxins. 2019; 11 (10):550.

Chicago/Turabian Style

Nikita Nekrasov; Dmitry Kireev; Aleksei Emelianov; Ivan Bobrinetskiy. 2019. "Graphene-Based Sensing Platform for On-Chip Ochratoxin A Detection." Toxins 11, no. 10: 550.

Research article
Published: 18 July 2018 in ACS Photonics
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Single and few-layer graphene photodetectors have attracted much attention in the past few years. Pristine graphene shows a very weak response to visible light, hence fabrication of complex graphene based detectors is a challenging task. In this work, we utilize the ultrafast laser functionalization of single-layer CVD graphene for highly desirable maskless fabrication of micro- and nanoscale devices. We investigate the optoelectronic response of pristine and functionalized devices under femtosecond and continuous wave lasers irradiation. We demonstrate that the photocurrent generation in p-p+ junctions formed in single layer graphene is related to the photo-thermoelectric effect. The photoresponsivity of our laser patterned single-layer graphene junctions is shown to be as high as 100 mA/W with noise equivalent power less than 6 kW/cm2. These results open a path to a low-cost maskless technology for fabrication of graphene based optoelectronic devices with tunable properties for spectroscopy, signal processing and other applications.

ACS Style

Aleksei V. Emelianov; Dmitry Kireev; Andreas Offenhäusser; Nerea Otero; Pablo M. Romero; Ivan I. Bobrinetskiy. Thermoelectrically Driven Photocurrent Generation in Femtosecond Laser Patterned Graphene Junctions. ACS Photonics 2018, 5, 3107 -3115.

AMA Style

Aleksei V. Emelianov, Dmitry Kireev, Andreas Offenhäusser, Nerea Otero, Pablo M. Romero, Ivan I. Bobrinetskiy. Thermoelectrically Driven Photocurrent Generation in Femtosecond Laser Patterned Graphene Junctions. ACS Photonics. 2018; 5 (8):3107-3115.

Chicago/Turabian Style

Aleksei V. Emelianov; Dmitry Kireev; Andreas Offenhäusser; Nerea Otero; Pablo M. Romero; Ivan I. Bobrinetskiy. 2018. "Thermoelectrically Driven Photocurrent Generation in Femtosecond Laser Patterned Graphene Junctions." ACS Photonics 5, no. 8: 3107-3115.

Journal article
Published: 31 May 2017 in Nanotechnology
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A low-cost method for carbon nanotubes (CNTs) network production from solutions on flexible polyethylene naphthalate substrates has been adopted to prepare high quality and well characterized SWCNT bundle layers to be used as the active layer in chemiresistor gas sensors. Two types of SWCNTs have been tested: pristine SWCNTs, deposited from a surfactant solution, and covalently functionalized SWCNTs, deposited from a dimethyl-acetamide solution. The humidity effects on the sensitivity of the SWCNTs network to NH3 have been investigated. The results show that relative humidity favors the response to NH3, confirming recent theoretical predictions. The COOH-functionalized sample displays the largest response owing to both its hydrophilic nature, favoring the interaction with H2O molecules, and its largest surface area. Compared to data available in the literature, the present sensors display a remarkable sensitivity well below the ppm range, which makes them quite promising for environmental and medical applications, where NH3 concentrations (mostly of the order of tens of ppb) have to be detected.

ACS Style

F Rigoni; Sonia Freddi; S Pagliara; G Drera; Luigi Sangaletti; J-M Suisse; M Bouvet; Anton Malovichko; A V Emelianov; I I Bobrinetskiy. Humidity-enhanced sub-ppm sensitivity to ammonia of covalently functionalized single-wall carbon nanotube bundle layers. Nanotechnology 2017, 28, 255502 .

AMA Style

F Rigoni, Sonia Freddi, S Pagliara, G Drera, Luigi Sangaletti, J-M Suisse, M Bouvet, Anton Malovichko, A V Emelianov, I I Bobrinetskiy. Humidity-enhanced sub-ppm sensitivity to ammonia of covalently functionalized single-wall carbon nanotube bundle layers. Nanotechnology. 2017; 28 (25):255502.

Chicago/Turabian Style

F Rigoni; Sonia Freddi; S Pagliara; G Drera; Luigi Sangaletti; J-M Suisse; M Bouvet; Anton Malovichko; A V Emelianov; I I Bobrinetskiy. 2017. "Humidity-enhanced sub-ppm sensitivity to ammonia of covalently functionalized single-wall carbon nanotube bundle layers." Nanotechnology 28, no. 25: 255502.

Journal article
Published: 21 April 2017 in Semiconductors
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This study is devoted to the fabrication of molecular semiconductor channels based on polymer molecules with nanoscale electrodes made of single-walled carbon nanotubes. A reproducible technology for forming nanoscale gaps in carbon nanotubes using a focused Ga+ ion beam is proposed. Polyaniline molecules are deposited into nanogaps up to 30 nm wide between nanotubes by electrophoresis from N-methyl-2-pyrrolidone solution. As a result, molecular organic transistors are fabricated, in which the field effect is studied and the molecular-channel mobility is determined as 0.1 cm2/(V s) at an on/off current ratio of 5 × 102.

ACS Style

A. V. Emelianov; A. V. Romashkin; K. A. Tsarik; Albert Nasibulin; V. K. Nevolin; Ivan Bobrinetskiy. On the high charge-carrier mobility in polyaniline molecular channels in nanogaps between carbon nanotubes. Semiconductors 2017, 51, 488 -491.

AMA Style

A. V. Emelianov, A. V. Romashkin, K. A. Tsarik, Albert Nasibulin, V. K. Nevolin, Ivan Bobrinetskiy. On the high charge-carrier mobility in polyaniline molecular channels in nanogaps between carbon nanotubes. Semiconductors. 2017; 51 (4):488-491.

Chicago/Turabian Style

A. V. Emelianov; A. V. Romashkin; K. A. Tsarik; Albert Nasibulin; V. K. Nevolin; Ivan Bobrinetskiy. 2017. "On the high charge-carrier mobility in polyaniline molecular channels in nanogaps between carbon nanotubes." Semiconductors 51, no. 4: 488-491.

Journal article
Published: 01 January 2017 in Materials Letters
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ACS Style

Ivan Bobrinetskiy; Aleksei Emelianov; Svetlana Smagulova; Ivan Komarov; N. Otero; P.M. Romero. Laser direct 3D patterning and reduction of graphene oxide film on polymer substrate. Materials Letters 2017, 187, 20 -23.

AMA Style

Ivan Bobrinetskiy, Aleksei Emelianov, Svetlana Smagulova, Ivan Komarov, N. Otero, P.M. Romero. Laser direct 3D patterning and reduction of graphene oxide film on polymer substrate. Materials Letters. 2017; 187 ():20-23.

Chicago/Turabian Style

Ivan Bobrinetskiy; Aleksei Emelianov; Svetlana Smagulova; Ivan Komarov; N. Otero; P.M. Romero. 2017. "Laser direct 3D patterning and reduction of graphene oxide film on polymer substrate." Materials Letters 187, no. : 20-23.

Journal article
Published: 01 December 2016 in Semiconductors
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The process of oxidation of single-layer and multilayer graphene films upon ultraviolet irradiation of the structure in water vapor was studied. The systematic features and distinctions between changes in the topographic and optical properties of graphene films composed of different numbers of layers were established. The possibility of surface functionalization accompanied by modification of the energy structure of graphene was shown. Differences between single-layer and multilayer graphene films in the mechanisms of oxidation on ultraviolet irradiation are discussed and analyzed. Correlation of the topographic imperfections of the properties of the graphene material with its structural defects observed in Raman spectra was shown.

ACS Style

Denis Levin; Ivan Bobrinetskiy; Aleksei Emelianov; V. K. Nevolin; A. V. Romashkin; V. A. Petuhov. Surface functionalization of single-layer and multilayer graphene upon ultraviolet irradiation. Semiconductors 2016, 50, 1738 -1743.

AMA Style

Denis Levin, Ivan Bobrinetskiy, Aleksei Emelianov, V. K. Nevolin, A. V. Romashkin, V. A. Petuhov. Surface functionalization of single-layer and multilayer graphene upon ultraviolet irradiation. Semiconductors. 2016; 50 (13):1738-1743.

Chicago/Turabian Style

Denis Levin; Ivan Bobrinetskiy; Aleksei Emelianov; V. K. Nevolin; A. V. Romashkin; V. A. Petuhov. 2016. "Surface functionalization of single-layer and multilayer graphene upon ultraviolet irradiation." Semiconductors 50, no. 13: 1738-1743.

Text
Published: 24 October 2016 in Applied Physics Letters
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We investigate the effect of UV processing of graphene with different structural properties prepared by mechanical exfoliation and CVD growth. Depending on UV exposure time, we observe different effects like oxidation, doping, and etching. For bi-layered and few-layered graphene flakes, we do not observe significant etching even after 3 h exposure which indicates the high resistance of graphene to reactive oxygen species intercalation between graphene layers. Single-layer CVD-grown graphene is fully etched after 2 h of UV treatment. The crystalline size of exfoliated single layer graphene after UV exposure drops from 45 to 5 nm while for CVD graphene from just 10 to 2 nm. We investigate the effect of UV irradiation on field effect transistors, demonstrating sequential cleaning from polymer residuals, oxidation (doping), and final etching of graphene. After 30 minutes of UV irradiation, we observe the hole mobility of a CVD single layer graphene transistor increasing up to 400 cm2/V·s.

ACS Style

A. V. Emelianov; Dmitry Kireev; D. D. Levin; I. I. Bobrinetskiy. The effect of ultraviolet light on structural properties of exfoliated and CVD graphene. Applied Physics Letters 2016, 109, 173101 .

AMA Style

A. V. Emelianov, Dmitry Kireev, D. D. Levin, I. I. Bobrinetskiy. The effect of ultraviolet light on structural properties of exfoliated and CVD graphene. Applied Physics Letters. 2016; 109 (17):173101.

Chicago/Turabian Style

A. V. Emelianov; Dmitry Kireev; D. D. Levin; I. I. Bobrinetskiy. 2016. "The effect of ultraviolet light on structural properties of exfoliated and CVD graphene." Applied Physics Letters 109, no. 17: 173101.

Letter
Published: 13 September 2016 in Journal of Physics D: Applied Physics
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The micro-scale patterns in graphene on Si/SiO2 substrate were fabricated using ultrashort 515 nm laser pulses. For both picosecond and femtosecond laser pulses two competitive processes, based on photo-thermal (ablation) and photochemical (oxidation/etching) effects, were observed. The laser-induced etching of graphene starts just below the threshold energy of graphene ablation: 1.7 nJ per 280 fs pulse and 2.7 µJ per 30 ps pulse. Whilst etching is not sensitive to thermal properties of graphene and provides uniform patterns, the ablation, in contrast, is highly affected by defects in the graphene structure like wrinkles and bilayer islands. The mechanisms of ultrafast laser interaction with graphene are discussed.

ACS Style

Ivan Bobrinetskiy; Aleksei Emelianov; Albert Nasibulin; Ivan Komarov; Nerea Otero; Pablo M Romero. Photophysical and photochemical effects in ultrafast laser patterning of CVD graphene. Journal of Physics D: Applied Physics 2016, 49, 41LT01 .

AMA Style

Ivan Bobrinetskiy, Aleksei Emelianov, Albert Nasibulin, Ivan Komarov, Nerea Otero, Pablo M Romero. Photophysical and photochemical effects in ultrafast laser patterning of CVD graphene. Journal of Physics D: Applied Physics. 2016; 49 (41):41LT01.

Chicago/Turabian Style

Ivan Bobrinetskiy; Aleksei Emelianov; Albert Nasibulin; Ivan Komarov; Nerea Otero; Pablo M Romero. 2016. "Photophysical and photochemical effects in ultrafast laser patterning of CVD graphene." Journal of Physics D: Applied Physics 49, no. 41: 41LT01.

Proceedings article
Published: 04 March 2016 in Laser-based Micro- and Nanoprocessing X
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Carbon nanomaterials is among the most promising technologies for advanced electronic applications, due to their extraordinary chemical and physical properties. Nonetheless, after more than two decades of intensive research, the application of carbon-based nanostructures in real electronic and optoelectronic devices is still a big challenge due to lack of scalable integration in microelectronic manufacturing. Laser processing is an attractive tool for graphene device manufacturing, providing a large variety of processes through direct and indirect interaction of laser beams with graphene lattice: functionalization, oxidation, reduction, etching and ablation, growth, etc. with resolution down to the nanoscale. Focused laser radiation allows freeform processing, enabling fully mask-less fabrication of devices from graphene and carbon nanotube films. This concept is attractive to reduce costs, improve flexibility, and reduce alignment operations, by producing fully functional devices in single direct-write operations. In this paper, a picosecond laser with a wavelength of 515 nm and pulse width of 30 ps is used to pattern carbon nanostructures in two ways: ablation and chemical functionalization. The light absorption leads to thermal ablation of graphene and carbon nanotube film under the fluence 60-90 J/cm2 with scanning speed up to 2 m/s. Just under the ablation energy, the two-photon absorption leads to add functional groups to the carbon lattice which change the optical properties of graphene. This paper shows the results of controlled modification of geometrical configuration and the physical and chemical properties of carbon based nanostructures, by laser direct writing. © (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

ACS Style

Ivan I. Bobrinetskiy; Alexey V. Emelianov; Nerea Otero; Pablo M. Romero. Ultrafast graphene and carbon nanotube film patterning by picosecond laser pulses. Laser-based Micro- and Nanoprocessing X 2016, 9736, 97360 .

AMA Style

Ivan I. Bobrinetskiy, Alexey V. Emelianov, Nerea Otero, Pablo M. Romero. Ultrafast graphene and carbon nanotube film patterning by picosecond laser pulses. Laser-based Micro- and Nanoprocessing X. 2016; 9736 ():97360.

Chicago/Turabian Style

Ivan I. Bobrinetskiy; Alexey V. Emelianov; Nerea Otero; Pablo M. Romero. 2016. "Ultrafast graphene and carbon nanotube film patterning by picosecond laser pulses." Laser-based Micro- and Nanoprocessing X 9736, no. : 97360.

Journal article
Published: 27 July 2015 in Applied Physics Letters
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ACS Style

I. I. Bobrinetskiy; A. V. Emelianov; N. Otero; P. M. Romero. Patterned graphene ablation and two-photon functionalization by picosecond laser pulses in ambient conditions. Applied Physics Letters 2015, 107, 043104 .

AMA Style

I. I. Bobrinetskiy, A. V. Emelianov, N. Otero, P. M. Romero. Patterned graphene ablation and two-photon functionalization by picosecond laser pulses in ambient conditions. Applied Physics Letters. 2015; 107 (4):043104.

Chicago/Turabian Style

I. I. Bobrinetskiy; A. V. Emelianov; N. Otero; P. M. Romero. 2015. "Patterned graphene ablation and two-photon functionalization by picosecond laser pulses in ambient conditions." Applied Physics Letters 107, no. 4: 043104.

Journal article
Published: 01 January 2015 in Technical Physics Letters
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We propose a new concept in the formation of transparent conducting films based on single-walled carbon nanotubes (SWNTs) and polyaniline (PANI) on a flexible polyethylene naphthalate substrate. It is established that the resistance of SWNT-PANI composite films decreases to less than half as compared to pure nanotubes, while the transparency is retained. Mechanisms responsible for a change in the conductivity of composite molecular systems are discussed based on differences in the transport of charge carriers in nanotubes and the polymer with allowance for their interaction.

ACS Style

A. V. Emelianov; K. F. Akhmadishina; A. V. Romashkin; V. K. Nevolin; I. I. Bobrinetskiy. Features of flexible transparent conducting films based on polyaniline-carbon nanotube composite. Technical Physics Letters 2015, 41, 94 -97.

AMA Style

A. V. Emelianov, K. F. Akhmadishina, A. V. Romashkin, V. K. Nevolin, I. I. Bobrinetskiy. Features of flexible transparent conducting films based on polyaniline-carbon nanotube composite. Technical Physics Letters. 2015; 41 (1):94-97.

Chicago/Turabian Style

A. V. Emelianov; K. F. Akhmadishina; A. V. Romashkin; V. K. Nevolin; I. I. Bobrinetskiy. 2015. "Features of flexible transparent conducting films based on polyaniline-carbon nanotube composite." Technical Physics Letters 41, no. 1: 94-97.

Journal article
Published: 17 December 2014 in Semiconductors
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It is shown that the coating of carbon nanotubes with molecules with a constant dipole moment changes the conductance of the tubes due to a variation in the structure of energy levels that participate in charge transport. The I–V characteristics of the investigated structures exhibit significant dependence of the channel conductance on the gate potential. The observed memory effect of conductance level can be explained by the rearrangement of polar groups and molecules as a whole in an electric field. The higher the dipole moment per unit length and the weaker the intermolecular interaction, the faster the rearrangement process is

ACS Style

Ivan Bobrinetskiy; Aleksei Emelianov; V. K. Nevolin; A. V. Romashkin. Effect of an organic molecular coating on control over the conductance of carbon nanotube channel. Semiconductors 2014, 48, 1735 -1741.

AMA Style

Ivan Bobrinetskiy, Aleksei Emelianov, V. K. Nevolin, A. V. Romashkin. Effect of an organic molecular coating on control over the conductance of carbon nanotube channel. Semiconductors. 2014; 48 (13):1735-1741.

Chicago/Turabian Style

Ivan Bobrinetskiy; Aleksei Emelianov; V. K. Nevolin; A. V. Romashkin. 2014. "Effect of an organic molecular coating on control over the conductance of carbon nanotube channel." Semiconductors 48, no. 13: 1735-1741.