Electronic equipment, including phased array radars, satellites, high-performance computers, etc., has been widely used in military and civilian fields. Its importance and significance are self-evident. Electronic equipment has many small components, various functions, and complex structures, making assembly an essential step in the manufacturing process of electronic equipment. In recent years, the traditional assembly methods have had difficulty meeting the increasingly complex assembly needs of military and civilian electronic equipment. With the rapid development of Industry 4.0, emerging intelligent assembly technology is replacing the original “semi-automatic” assembly technology. Aiming at the assembly requirements of small electronic equipment, we first evaluate the existing problems and technical difficulties. Then, we analyze the intelligent assembly technology of electronic equipment from three aspects: visual positioning, path and trajectory planning, and force–position coordination control technology. Further, we describe and summarize the research status and the application of the technology and discuss possible future research directions in the intelligent assembly technology of small electronic equipment.

Mo ₂ C layer was generated on the diamond surface via vacuum micro-evaporating, which was used as the reinforcement particles to fabricate diamond/Cu composites by spark plasma sintering (SPS). The effect of evaporation parameters on the forming of Mo ₂ C, and the holding time on diamond/Cu composites fabrication is studied. Combined with the experiment and finite element analysis (FEA), the holding time on diamond/Cu composites influence on the thermal conductivity (TC) of composites is further discussed. The results show that the Mo ₂ C area on the diamond surface would gradually enlarge and cover the diamond surface evenly with the increment in evaporation time and temperature, better vacuum micro-evaporating parameters were given as 1,000°C for 60 min. The fractures in the diamond/Cu composites are mainly ductile fractures on copper and diamond falling out from the Mo ₂ C interface. It was found that sintering time would significantly influence the dissipation property of diamond/Cu composites. A comprehensive parameter for SPS was obtained at 900°C, 80 MPa for 10 min, the relative density (RD) and TC of the composites obtained under the parameter were 96.13% and 511 W/(m K). A longer sintering time would damage the Mo ₂ C interlayer and further decrease the bonding between copper matrix and diamond particles, which would lower the RD and TC of composites. It can be obtained from the comparison of simulation results and experimental results that the FEA result is closer to the experimental results due to the gaps with low heat conduction, and the air in the gaps is added in the simulation process.

The development of electronic devices has a tendency to become more complicated in structure, more integrated in function, and smaller in size. The heat flow density of components continues to escalate, which urgently requires the development of heat sink materials with high thermal conductivity and a low coefficient of expansion. Diamond/aluminum composites have become the research hotspot of thermal management materials with excellent thermophysical and mechanical properties, taking into account the advantages of light weight. In this paper, diamond/Al composites are prepared by combining aluminum as matrix and diamond reinforcement through the discharge plasma sintering (SPS) method. The micro-interfacial bonding state of diamond and aluminum is changed by adjusting the particle size of diamond, and the macroscopic morphology performance of the composites is regulated. Through this, the flexible design of diamond/Al performance can be achieved. As a result, when 150 μm diamond powder and A1-12Si powder were used for the composite, the thermal conductivity of the obtained specimens was up to 660.1 W/mK, and the coefficient of thermal expansion was 5.63 × 10⁻⁶/K, which was a good match for the semiconductor material. At the same time, the bending strength is 304.6 MPa, which can satisfy the performance requirements of heat-sinking materials in the field of electronic packaging.