We report on the fabrication and study of bulk heterojunction (BHJ) solar cells based on a novel combination of a donor–acceptor poly(9,9-dioctylfluorenyl-2,7-diyl)-co-(N,N0-diphenyl)-N,N′di(p-butyl-oxy-pheyl)-1,4-diamino-benzene) (PFB) and [6, 6]-phenyl-C61-butyric acid methyl ester (PCBM) blend composed of 1:1 by volume. indium tin oxide (ITO)/poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate (PEDOT:PSS)/PFB–PCBM/Ag BHJ solar cells are fabricated by a facile cost-effective spin-coating technique. The thickness of the active film (PFB–PCBM) plays an important role in the efficiency of light absorption, exciton creation, and dissociation into free charges that results in higher power conversion efficiency (PCE). In order to optimize the PCE as a function of active layer thickness, a number of solar cells are fabricated with different thicknesses of PFB–PCBM films at 120, 140, 160, 180, and 200 nm, and their photovoltaic characteristics are investigated. It is observed that the device with a 180 nm thick film demonstrates a maximum PCE of 2.9% with a fill factor (FF) of 53% under standard testing conditions (STC) (25 °C, 1.5 AM global, and 100 mW/cm²). The current–voltage (I-V) properties of the ITO/PEDOT:PSS/PFB–PCBM/Ag BHJ devices are also measured in dark conditions to measure and understand different parameters of the heterojunction. Atomic force microscopy (AFM) and ultraviolet-visible (UV-vis) absorption spectroscopy for the PFB–PCBM film of optimal thickness (180 nm) are carried out to understand the effect of surface morphology on the PCE and bandgap of the blend, respectively. The AFM micrographs show a slightly non-uniform and rough surface with an average surface roughness (R_a) of 29.2 nm. The UV-vis measurements of the PFB–PCBM blend exhibit a reduced optical bandgap of ≈2.34 eV as compared to that of pristine PFB (2.88 eV), which results in an improved absorption of light and excitons generation. The obtained results for the ITO/PEDOT:PSS/PFB–PCBM (180 nm)/Ag BHJ device are compared with the ones previously reported for the P3HT–PCBM blend with the same film thickness. It is observed that the PFB–PCBM-based BHJ device has shown two times higher open circuit voltage (V_oc) and, hence, enhanced the efficiency.

In this paper, we report optical characteristics of an organic single crystal oligomer 5,5⁗-diphenyl-2,2′:5′,2″:5″,2‴:5‴,2⁗-quinquethiophene (P5T). P5T crystal is a thiophene/phenylene co-oligomer that possesses better charge mobility as well as photoluminescence quantum efficiency (PLQE) as compared to other organic materials. Stimulated emission in P5T is investigated via amplified spontaneous emission (ASE) measurements within broad pump energies ranging from 35.26 to 163.34 µJ/cm². An Nd-YAG femtosecond-tunable pulsed laser is used as a pump energy source for the ASE measurements of P5T crystals at an excitation wavelength of 445 nm. The ASE spectra exhibit optical amplification in P5T crystals at a 625 nm peak wavelength with a lower threshold energy density (E_th) ≈ 52.64 μJ/cm². P5T also demonstrates higher optical gain with a value of 72 cm⁻¹, that is calculated by using the variable stripe-length method. The value of PLQE is measured to be 68.24% for P5T. This study proposes potential applications of P5T single crystals in organic solid state lasers, photodetectors, and optical amplifiers.

This work reports on the synthesis of small molecular semiconductor 2-(1H-pyrrol-1-yl)-anthracene-9,10-dione (PAD) via wet chemical precipitation route method for its possible potential applications in sensors. Thin film characterization of the synthesized PAD is carried out by studying its surface morphology, bond dynamics, and optical properties. For studying sensing characteristics of the PAD, its 100 nm thick film is thermally deposited on pre-patterned silver (Ag) electrodes over glass substrate having ~45 µm inter-electrode gaps to prepare Ag/PAD/Ag sensor. The effects of humidity (%RH), temperature (T), and illumination of light (E_v) on the fabricated Ag/PAD/Ag sensor are studied by changing one of the three (%RH, T, and E_v) parameters at a time and measuring the corresponding variations in capacitance (C) and capacitive reactance (X) of the device. As C and X also depend on frequency, sensing properties of the Ag/PAD/Ag sensor are measured at two different frequencies (120 Hz and 1 kHz) to find the optimum sensitivity conditions. To investigate reproducibility and repeatability of Ag/PAD/Ag sensor, each measurement is taken several times and also hysteresis loops of %RH vs. C are plotted at 120 Hz and 1 kHz to find the percent errors in each cycle of measurements. The sensor is active to sense humidity, temperature, and illumination within a broad range, i.e., from 15–93%RH, 293–382 K, and 1500–20,000 lx, respectively. Other key parameters of the sensor i.e., the humidity response time (T_Res) and recovery time (T_Rec), are measured, which are 5 and 7 s, respectively, whereas for light sensing the values of T_Res and T_Rec are measured to be 3.8 and 2.6 s, respectively. The measured values of T_Res and T_Rec for the fabricated Ag/PAD/Ag sensor are shorter and better as compared to those of previously reported for similar kind of small molecular based sensors. The sensing properties of Ag/PAD/Ag device exhibit the potential of PAD for humidity, temperature, and light sensing applications.