A self-compliance resistive random access memory (RRAM) achieved through thermal annealing of a Pt/HfO_x/Ti structure. The electrical characteristic measurements show that the forming voltage of the device annealing at 500 °C decreased, and the switching ratio and uniformity improved. Tests on the device’s cycling endurance and data retention characteristics found that the device had over 1000 erase/write endurance and over 10⁵ s of lifetime (85 °C). The switching mechanisms of the devices before and after annealing were also discussed.

GaN-based high electron mobility transistors offer high carrier density combined with high electron mobility and often require operation at high frequencies, voltages, and temperatures. The device may be under high temperature and high voltage at the same time in actual operation. In this work, the impact of separate off-state stresses, separate high-temperature stresses, and off-state stresses at high temperatures on AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates was investigated. The output current and gate leakage of the device degenerated to different degrees under either isolated off-state or high-temperature stress. The threshold voltage of the device only exhibited obvious negative drift under the action of high-temperature and off-state stresses. The parameter at high temperature (or room temperature) before stress application was the reference. We found that there was no significant difference in the degradation rate of drain current and transconductance peak when the same off-state stress was applied to the device at different temperatures. It was concluded that, under the high-temperature off-state electric field pressure, there were two degradation mechanisms: one was the inverse piezoelectric polarization mechanism only related to the electric field, and the other was the degradation mechanism of the simultaneous action of temperature and electric field.

This paper analyzes graphene irradiation effects using a molecular dynamic simulation software, large-scale atomic / molecular massively parallel simulator (LAMMPS). We propose a hypothesis for the effective range of incident ions based on simulation results of irradiation effects that were found using a suspended single-layer graphene. This explains the influence mechanism of irradiation density on the degree of material defects. This paper does key research on how copper substrate influences a single- and bi-layer graphene. The results show that for a single-layer graphene (SLG) the substrate increases the effective range of the incident ions. Within a certain range of the irradiation density, the substrate enhances the defect production on graphene in low-energy irradiation (<5 keV). However, due to the shielding effect of the substrate, the overall trend of graphene damage will be reduced. For the bi-layer graphene (BLG), the effect of the indirect action range is more obvious than that of the direct-action range. In the case of low irradiation density, the knock-on atoms of BLG are much less than suspended SLG.