The high-quality single crystal diamond (SCD) grown in the Microwave Plasma Chemical Vapor Deposition (MPCVD) system was studied. The CVD deposition reaction occurred in a 300 torr high pressure environment on a (100) plane High Pressure High Temperature (HPHT) diamond type II a substrate. The relationships among the chamber pressure, substrate surface temperature, and system microwave power were investigated. The surface morphology evolution with a series of different concentrations of the gas mixture was observed. It was found that a single lateral crystal growth occurred on the substrate edge and a systemic step flow rotation from the [100] to the [110] orientation was exhibited on the surface. The Raman spectroscopy and High Resolution X-Ray Diffractometry (HRXRD) prove that the homoepitaxy part from the original HPHT substrate shows a higher quality than the lateral growth region. A crystal lattice visual structural analysis was applied to describe the step flow rotation that originated from the temperature driven concentration difference of the C₂H₂ ion charged particles on the SCD center and edge.

The diamond mosaic grown on the single-crystal diamond substrates by the microwave plasma chemical vapor deposition (MPCVD) method has been studied. The average growth rate was about 16–17 μm/h during 48 hours’ growth. The surface morphologies of the as-grown diamond layer were observed. It was found that the step flow was able to move across the substrates and cover the junction interface. Raman spectroscopic mapping in the central area of the junction revealed the high stress region movement across the junction interface from one substrate to the other for about 200–400 μm. High-resolution X-ray diffractometry (HRXRD) results proved that the surface step flow movement direction had nothing to do with the off-axis directions of the original substrates. It was found that the surface height difference of substrate was the main driving force for the step flow movement, junction combination and surface morphology changing. The mechanism of the mosaic interface junction combination and step flow transformation on the mosaic surface was proposed.

With the increased power density of gallium nitride (GaN) high electron mobility transistors (HEMTs), effective cooling is required to eliminate the self-heating effect. Incorporating diamond into GaN HEMT is an alternative way to dissipate the heat generated from the active region. In this review, the four main approaches for the integration of diamond and GaN are briefly reviewed, including bonding the GaN wafer and diamond wafer together, depositing diamond as a heat-dissipation layer on the GaN epitaxial layer or HEMTs, and the epitaxial growth of GaN on the diamond substrate. Due to the large lattice mismatch and thermal mismatch, as well as the crystal structure differences between diamond and GaN, all above works face some problems and challenges. Moreover, the review is focused on the state-of-art of polycrystalline or nanocrystalline diamond (NCD) passivation layers on the topside of GaN HEMTs, including the nucleation and growth of the diamond on GaN HEMTs, structure and interface analysis, and thermal characterization, as well as electrical performance of GaN HEMTs after diamond film growth. Upon comparing three different nucleation methods of diamond on GaN, electrostatic seeding is the most commonly used pretreatment method to enhance the nucleation density. NCDs are usually grown at lower temperatures (600–800 °C) on GaN HEMTs, and the methods of “gate after growth” and selective area growth are emphasized. The influence of interface quality on the heat dissipation of capped diamond on GaN is analyzed. We consider that effectively reducing the thermal boundary resistance, improving the regional quality at the interface, and optimizing the stress–strain state are needed to improve the heat-spreading performance and stability of GaN HEMTs. NCD-capped GaN HEMTs exhibit more than a 20% lower operating temperature, and the current density is also improved, which shows good application potential. Furthermore, the existing problems and challenges have also been discussed. The nucleation and growth characteristics of diamond itself and the integration of diamond and GaN HEMT are discussed together, which can more completely explain the thermal diffusion effect of diamond for GaN HEMT and the corresponding technical problems.

We report herein high-resolution x-ray diffraction measurements of basal plane bending of homoepitaxial single-crystal diamond (SCD). The results reveal that growth parameters such as temperature, growth time and basal plane bending of the substrate affect the basal plane bending of SCD. First, the basal plane bending of SCD depends mainly on the substrate itself. The basal plane bending of SCD becomes more severe with increasing basal plane bending of the substrate and this type of basal plane bending cannot be recovered. The SCD growth experiments show that the basal plane bending increases at high temperature and with increasing growth time. Finally, to understand the mechanism behind basal plane bending, we investigate the substrate-surface temperature distribution as a function of basal plane bending of SCD fabricated by chemical vapour deposition (CVD). This allows us to propose a bending model and understand the origin of basal plane bending. The results indicate that an uneven temperature distribution on the substrate surface is the main cause of the CVD diamond base-plane bending.