The digital low drop-out regulator (LDO) has been used widely in digital circuits for its low supply voltage characteristics. However, as the traditional digital LDOs regulate the output voltage code at a rate of 1 bit per clock cycle, the transient response speed is limited. This paper presents a digital LDO to improve transient response speed with a multi-bit conversion technique. The proposed technology uses a voltage sensor and a time-to-digital converter to convert the output voltage to digital codes. Based on a 65-nm CMOS process, the proposed DLDO reduces the settling time from 147.8 ns to 25.2 ns on average and the response speed is improved by about six times.

Digital low drop-out regulator (D-LDO) with fast settling time and superior transient response is gaining increasing attention to make up for the deficiency of analog LDO. However, as the traditional digital LDOs regulate the output voltage code at a rate of 1 bit per clock cycle, the transient response speed is limited. In this paper, a multi-bit conversion technique is proposed to improve the transient response speed. The multi-bit conversion technique is achieved by an error detector with adaptive regulation of proportion and integration parameters in the digital controller before pass devices. Besides, a voltage sensor and a time-to-digital converter are employed to convert the output voltage to digital codes. Implemented in a 180-nm CMOS process, the proposed D-LDO features under 36/33 mV of undershoot/overshoot at $V_{\mathrm{OUT}}$ = 0.95 V as the load current steps up with 40 mA/1 ns on a 0.5 nF load capacitor. The simulated response time is 0.18-ns, the figure-of-merit of speed FOM1 is 0.65 ps and FOM2 achieves 0.068 pF.

This paper presents a 9-bit 1 GS/s successive approximation register (SAR) analog-to-digital converter (ADC). In this hybrid architecture, the pseudo-pipeline operation is realized, which increases the sampling rate effectively. The ADC adopts two key technologies: the variable gain voltage-to-time converter (VTC), which ensures the linearity is not sacrificed; the segmented time-to-digital converter (STDC), which further improves the linearity of time domain quantization. The prototype ADC is simulated in a standard 65-nm CMOS process with an active area of 0.038 mm². The simulated SNDR and SFDR are 44.3 and 58 dB with a sampling rate of 1 GS/s. The FoMW and FoMS are 24.7 fJ/conv-step and 150.7 dB, respectively.